Sony Corporation

Joled Inc.

Narihiro Morosawa

Toshiaki Arai

Yasuhiro Terai

Eri Fukumoto

Takashige Fujimori

Kazuhiko Tokunaga

Tsutomu Tanaka

Hiroshi Sagawa

Dharam Pal Gosain

Yoshihiro Oshima

Kiwamu Miura

Motohiro Toyota

A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.

Thin-film transistor, method of manufacturing the same, and display device

A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal, and including a first conductive film, a first semiconductor layer including an oxide semiconductor, an insulating film, and a second conductive film in order of closeness to the substrate. The display element, the transistor, and the holding capacitance element are provided on the substrate.

Display device and electronic unit

A display device includes a display element, a transistor configured to drive the display element, the transistor including a channel region, and a retention capacitor. An oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including a first region formed in the channel region of the transistor, and a second region having a lower resistance than that of the first region. The second region is formed in the areas of the transistor and retention capacitor other than in the channel region.

Display and electronic unit

A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal. The display element, the transistor, and the holding capacitance element are provided on the substrate. The holding capacitance element includes a first semiconductor layer including an oxide semiconductor, a first conductive film provided on the first semiconductor layer, a first insulating film provided between the first semiconductor layer and the first conductive film, and a recess formed by removing part or all in thickness of the first conductive film and the first insulating film in a selective region on the first semiconductor layer.

Display device and electronic apparatus

Provided is a semiconductor device that includes a transistor. The transistor includes: a gate electrode; an oxide semiconductor film facing the gate electrode and including a first overlapping region that is overlapped with the gate electrode; a low-resistance region provided in the oxide semiconductor film; and a first separation region provided between the low-resistance region and the first overlapping region.

Semiconductor device, display unit, and electronic apparatus

A method of manufacturing a transistor includes: forming an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate electrode facing the channel region; and forming an insulating film covering the gate electrode and the oxide semiconductor film. Infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate.

Transistor, method of manufacturing the transistor, semiconductor unit, method of manufacturing the semiconductor unit, display, and electronic apparatus

Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film.

Thin film transistor and display device

A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.

Thin film transistor, method of manufacturing the same, and display unit

Thin film transistor, electronic device, display device, and method of manufacturing thin film transistor

A thin film transistor comprising: a substrate; a gate electrode on the substrate; a gate insulation film on the gate electrode; an oxide semiconductor layer on the gate insulation film; a channel protection film on the oxide semiconductor layer; source and drain electrodes on the channel protection film; and a passivation film on the source and drain electrodes, wherein, (a) each of the gate insulation film, and passivation film comprises a laminated structure and includes a first layer made of aluminum oxide and a second layer made of an insulation material including silicon, and (b) the passivation film covers edges of the oxide semiconductor layer. The transistor is capable of suppressing desorption of oxygen and from the oxide semiconductor layer and reducing the time for film formation thereof.

A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer.

Thin film transistor and display

A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.

Growing community of inventors

Kanagawa, Japan

Narihiro Morosawa