Nissin Ion Equipment Co., Ltd.

Nissin Electric Co., Ltd.

Semequip, Inc.

Semiquip, Inc.

Nariaki Hamamoto

Sami K Hahto

Sei Umisedo

Thomas N Horsky

Hilton Frank Glavish

Dale Conrad Jacobson

Hideki Fujita

Nobuo Nagai

Masao Naito

Shigeki Sakai

Tadashi Ikejiri

Tetsuya Igo

Kohei Tanaka

Takao Matsumoto

An ion source is provided that includes an ionization chamber and two magnetic field sources. The ionization chamber has a longitudinal axis extending therethrough and includes two opposing chamber walls, each chamber wall being parallel to the longitudinal axis. The two magnetic field sources each comprises (i) a core and (ii) a coil wound substantially around the core. Each magnetic field source is aligned with and adjacent to an external surface of respective one of the opposing chamber walls and oriented substantially parallel to the longitudinal axis. The cores of the magnetic field sources are physically separated and electrically isolated from each other.

Magnetic field sources for an ion source

In some aspects, an ion implantation system is disclosed that includes an ion source for generating a ribbon ion beam and at least one corrector device for adjusting the current density of the ribbon ion beam along its longitudinal dimension to ensure that the current density profile exhibits a desired uniformity. The ion implantation system can further include other components, such as an analyzer magnet, and electrostatic bend and focusing lenses, to shape and steer the ion beam to an end station for impingement on a substrate. In some embodiments, the present teachings allows the generation of a nominally one-dimensional ribbon beam with a longitudinal size greater than the diameter of a substrate in which ions are implanted with a high degree of longitudinal profile uniformity.

Ion beam line

A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

Ion beam apparatus and method employing magnetic scanning

A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

A cathode holder of a tubular shape is inserted into an opening for a cathode of a plasma generating chamber, the cathode holder positioned such that a surface thereof opposes or surrounds a side surface of a cathode. The cathode is held in the cathode holder so that a front surface of the cathode will be positioned on the same plane as, outward from, or inward from the inner wall surface. In the cathode holder is provided a tubular first heat shield surrounding the cathode with a space provided between the first heat shield and the cathode, a surface of the first heat shield positioned to oppose or surround the side surface of the cathode. At a rear end of the cathode is provided a filament. The gap between the cathode holder and the plasma generating chamber is filled with an electrical insulating material.

Ion source

A change of a beam current of an ion beam which passes an outside of the side of a forestage beam restricting shutter, and which is incident on a forestage multipoints Faraday is measured while the forestage beam restricting shutter is driven in a y direction by a forestage shutter driving apparatus in order to obtain a beam current density distribution in the y direction of the ion beam at a position of the forestage beam restricting shutter. A change of a beam current of the ion beam which passes an outside of the side of a poststage beam restricting shutter, and which is incident on a poststage multipoints Faraday is measured while the poststage beam restricting shutter is driven in the y direction by a poststage shutter driving apparatus in order to obtain a beam current density distribution in the y direction of the ion beam at a position of the poststage beam restricting shutter. By using these results, an angle deviation, a diverging angle, and/or a beam size in the y direction of the ion beam can be obtained.

Ion beam measuring method and ion implanting apparatus

A beam current density distribution in y direction of an ion beamat a position of a forestage beam restricting shutteris measured by measuring a change in a beam current of the ion beamincident on a forestage multipoint Faradayby passing an outer side of a sideof the shutterwhile driving the forestage beam restricting shutterin y direction by a forestage shutter driving apparatus. Further, a beam current density distribution in y direction of the ion beamat a position of a poststage beam restricting shutteris measured by measuring a change in the beam current of the ion beamincident on a poststage multipoints Faradayby passing an outer side of a sideof the shutterwhile driving the poststage beam restricting shutterin y direction by a poststage shutter driving apparatus. Further, at least one of an angle deviation, a diverging angle and abeam side in y direction of the ion beamis measured by using a result of the measurement.

A cathode holder of a tubular shape is inserted into an opening for a cathode of a plasma generating chamber with a tip of the cathode holder positioned outward from an inner wall surface of the plasma generating chamber. The cathode is held in the cathode holder so that a front surface of the cathode will be positioned outward from the inner wall surface. In the cathode holder is provided a tubular first heat shield surrounding the cathode with a space provided between the first heat shield and the cathode, the tip of the first heat shield positioned outward from the inner wall surface. At a rear side of the cathode is provided a filament. The gap between the cathode holder and the plasma generating chamber is filled with an electrical insulating material.

An ion beam irradiation apparatus is equipped with a plasma generator which generates a plasma and supplies it to a region in the vicinity of the upstream side of a substrate, thereby suppressing a charging up of a surface of the substrate, which results from an irradiation of the ion beam. The radio frequency electric source for supplying the plasma for generating the plasma to a plasma generator is a radio frequency electric source for producing a radio frequency electric power formed by amplitude modulating an original radio frequency signal.

Ion beam irradiation apparatus for suppressing charge up of substrate and method for the same

An ion beam irradiation apparatus is provided with a plasma production device which produces a plasma through the radio frequency discharge and supplies the produced plasma in the vicinity of the substrate The plasma production device includes a plasma producing chamber being elongated along an axis extending in scanning directions X in which the ion beam is moved; a plasma emission hole being provided in a side thereof and elongated along the axis of the plasma producing chamber; and a magnet provided outside the plasma producing chamber for producing a magnetic field having a direction along the axis The magnetic field developed by the magnet contains a magnetic field which has a direction along the axis and bends to the substrate ions contained in the plasma emitted from a plasma emission hole

Ion production device for ion beam irradiation apparatus

When a plasma is ignited in a plasma generator, an ion beam is made to run in the plasma generator, and in this state, a positive voltage with respective to ground is applied to a plasma production chamber from a DC power source. Secondary electrons are generated when the ion beam collides with a plasma generating gas which flows out of the plasma production chamber into a path of the ion beam. The secondary electrons are led into the plasma production chamber by the positive voltage, and within the plasma production chamber, a plasma ignition is triggered using the secondary electrons led into the plasma production chamber and a radio frequency.

Ion beam irradiation apparatus and method of igniting a plasma for the same

The ion-implanting apparatus includes an implanting control device having the functions of sweeping an ion beam by a sweeping magnet and scanning a target by a scan mechanism. The implanting control device has the functions of changing a sweep frequency of the ion beam to be swept by said sweeping magnet according to at least one of the species and energy of the ion beam and changing the minimum number of times of scanning of the target to be scanned by said scan mechanism according to the changing of the sweep frequency.

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Kyoto, Japan

Nariaki Hamamoto