Samsung Display Co., Ltd.

Nari Ahn

Younggil Park

Sooim Jeong

Jaebum Han

Junghwa Park

Kicheol Song

Youngmoon Kim

Hyun-Ju Lee

Dongwon Han

Moonsung Kim

Hyeongsuk Yoo

Sungmin Hur

Junsu Park

JinYoung Choi

Hyosung Kim

Bohwa Kim

Kinam Kim

Young Do Kim

Youngsang Park

Hung Kun Ahn

Kiyoung Yeon

Hyunsang Seo

Sungwook Woo

Ojun Kwon

Manjae Park

Minuk Kim

Jung-hun Jung

Gisuk Kwon

Jung-Hun Jung

A display apparatus including a circuit with improved characteristics and including a thin-film transistor includes a first interlayer insulating layer arranged on a substrate, a first semiconductor layer arranged on the first interlayer insulating layer and including an oxide semiconductor material, a first gate electrode arranged on the first semiconductor layer, a second interlayer insulating layer arranged on the first gate electrode, and a first electrode layer arranged on the second interlayer insulating layer and electrically connected to the first semiconductor layer through a first contact hole penetrating the second interlayer insulating layer, wherein the first semiconductor layer includes an opening corresponding to the first contact hole, and the first electrode layer contacts an inner surface of the opening.

Display apparatus

A deposition mask includes a metal mask body in which a deposition opening is defined; and a coating layer including aluminum oxynitride, on an outer surface of the metal mask body.

Metal mask, method of manufacturing the same, and method of manufacturing display panel using the metal mask

A display panel includes the following elements: a substrate including a first base layer, wherein the first base layer includes a transparent polyimide resin; a first pixel circuit and a second pixel circuit over the substrate, spaced from each other with the transmission area between the first pixel circuit and the second pixel circuit, and each including transistors and a storage capacitor; a first display element electrically connected to the first pixel circuit; and a second display element electrically connected to the second pixel circuit.

Display panel having transmission area between pixel circuits and electronic apparatus including the same

A window includes a base layer and a hard coating layer on the base layer. The hard coating layer includes a first layer on the base layer and of a first thickness, and a second layer on the first layer and of a second thickness. The second layer includes an antistatic agent. The hard coating layer has a hardness reduction rate of 50 percent (%) or less expressed as follows. In the equation above, H is a hardness reduction rate (%) of a target layer, Dis a hardness reduction rate measured from the target layer at a temperature of 60 degrees Celsius (° C.) with a relative humidity of 93%, and Dis a hardness reduction rate measured from the target layer at a room temperature with a relative humidity of 30%.

Window, method of fabricating the same, and display device including the same

A display device includes a display panel that may be folded with reference to at least one folding axis, a polarization layer disposed on the display panel, an adhesive layer disposed on the polarization layer, and a window disposed on the adhesive layer, and having one surface facing the adhesive layer. A 180 degree (°) peel adhesion of the adhesive layer to the one surface of the window may be about 493 gram-force per inch (gf/inch) to about 817 gf/inch under the conditions of a temperature of about 60 degrees Celsius (° C.) and a relative humidity of about 93 percent (%). Accordingly, the display device including the adhesive layer may exhibit good durability, and maintain the reliability thereof.

Display device including foldable display panel

A display device includes: a substrate; a first insulating layer disposed on the substrate and that includes an inorganic insulating material; an oxide semiconductor layer disposed on the first insulating layer; a second insulating layer disposed on the oxide semiconductor layer and that includes an inorganic insulating material; and a third insulating layer disposed on a gate electrode disposed on the second insulating layer and that includes an inorganic insulating material. The oxide semiconductor layer includes a first conductive region, a second conductive region, and a channel region located between the first conductive region and the second conductive region, and a value in the channel region of the oxide semiconductor layer of HC according to equation (1) is less than 30%.

Display device and method of manufacturing display device

A display device includes a display panel, a panel protective film disposed below the display panel, and a first adhesive layer disposed between the display panel and the panel protective film, where a test speed of a tensile test of the panel protective film is about 5 millimeters per minute (mm/min), Young's modulus of the panel protective film is measured in a range of strain in which strain of the panel protective film is about 0.05 percent (%) to about 0.5%, and the panel protective film has the Young's modulus of about 4324 megapascals (MPa) to about 4792 MPa at about 25 degrees Celsius.

Display device and carrier film

A display apparatus is provided which may include a substrate including a display area and a non-display area adjacent to the display area, a first thin-film transistor disposed on the substrate and including a first semiconductor layer including an oxide semiconductor material, and a second thin-film transistor disposed on the substrate and including a second semiconductor layer including a silicon semiconductor material, wherein a surface roughness of the first semiconductor layer is increased by plasma treatment. A method of manufacturing the display apparatus is also provided.

Display apparatus and method of manufacturing the same

A display device includes: a display panel; a window disposed on the display panel; a window protection layer disposed on the window; and a first adhesive layer disposed between the window and the window protection layer; wherein the first adhesive layer has a creep value of about 38.1876% to about 40.4371% at a temperature of about 25&#xb0; C. when a stress of about 2,000 Pa is applied to the first adhesive layer for about 10 minutes, the first adhesive layer has a storage modulus of about 0.0317 MPa to about 0.0348 MPa, a loss modulus of about 0.0108 MPa to about 0.0120 MPa, and a tan delta value of about 0.3354 to about 0.3480 at the temperature of about 25&#xb0; C. when a frequency of about 1 Hz and an axial force of about 1.0 N are applied and the first adhesive layer maintains a strain of about 1%, and the tan delta value is defined by dividing the loss modulus by the storage modulus.

Display device

A thin film transistor substrate includes a first semiconductor layer disposed on a substrate and having a first channel area, a first source area and a first drain area. A first gate electrode is disposed above the first semiconductor layer and overlaps the first channel area. A first electrode layer is disposed above the first gate electrode and electrically connects to at least one of the first source area and the first drain area. A second insulating layer is disposed between the first gate electrode and the first electrode layer. The second insulating layer includes an inorganic control layer and a first inorganic layer arranged on the inorganic control layer. The inorganic control layer has a lower density than a density of the first inorganic layer.

Thin film transistor substrate and display apparatus including the same

A display device includes a display module and a window member disposed on the display module, where the window member includes a base layer and a hard coating layer disposed on the base layer. A moisture absorption ratio of the window member is about 2.2% or greater under a first condition including a first temperature and a first humidity. The first temperature is about 60&#xb0; C. or greater, and the first humidity is about 70% or greater.

Window member for display device, display device, and manufacturing method for display device

A display apparatus that includes a substrate, a first thin-film transistor and a second, thin-film transistor disposed on the substrate at different distances from a top surface of the substrate. A display device is electrically connected to the first thin-film transistor. The first thin-film transistor includes a first semiconductor layer in polycrystalline silicon and a first gate electrode that overlaps a channel region of the first semiconductor layer in a direction of a thickness of the substrate. The second thin-film transistor includes a second semiconductor layer including an oxide semiconductor. The first gate electrode has a stacked structure including a first layer and a second layer. The second layer includes titanium and the first layer includes a different material from the second layer.

Growing community of inventors

Yongin-si, South Korea

Nari Ahn