Exo Imaging, Inc.

Naresh Mantravadi

Haesung Kwon

Brian Lee Bircumshaw

Disclosed is a multi-silicon on insulator (SOI) micromachined ultrasonic transducer (MUT) device. The device comprises a multi-SOI substrate and a MUT. The MUT is affixed to a surface of the multi-SOI substrate. The multi-SOI substrate has a first SOI layer and at least a second SOI layer disposed above the first SOI layer. The first SOI layer and the second SOI layer each comprise an insulating layer and a semiconducting layer. The first SOI layer further defines a cavity located under a membrane of a MUT and one or more trenches at least partially around a perimeter of the cavity.

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San Jose, CA, United States of America

Naresh Mantravadi