Motorola Corporation

Semiconductor Components Industries, LLC

Naresh C Saha

Jaeshin Cho

William H Lytle

Alan J Magnus

Treliant Fang

Jong-Kai Lin

Ravinder K Sharma

Gregory L Hansell

A dielectric layer (,) is formed between a semiconductor surface (,) and an electrical contact (,) to promote adhesion of the contact (,). The dielectric layer (,) is formed by cleaning operation followed by a chemical oxidation.

Method of forming a contact

An ohmic contact to a III-V semiconductor material is fabricated by dry etching a silicon nitride layer overlying the III-V semiconductor material with a chemical comprised of a group VI element. An ohmic metal layer is formed on the III-V semiconductor material after the silicon nitride layer is etched and before any exposure of the III-V semiconductor material to a chemical which etches the III-V semiconductor material or removes the group VI element.

Method of forming an ohmic contact to a III-V semiconductor material

An etch stop layer prevents damage to the underlying semiconductor material or metallization layer during etching of a dielectric layer overlying the etch stop layer. The etch stop layer, aluminum nitride or aluminum oxide is used underlying silicon dioxide to prevent damage to the semiconductor material during a fluorocarbon based etch of the silicon dioxide. The etch stop layer is also used underlying a silicon dioxide layer and overlying a titanium nitride or titanium tungsten layer used in metallization to prevent etching of the titanium nitride or titanium tungsten layer during etching of the silicon dioxide.

Method utilizing an etch stop layer

A method of forming an electrically conductive polymer bump (22) over an aluminum electrode (21) produces low contact resistance for an interconnect structure (24). Aluminum oxide is first removed from the aluminum electrode (21). Tiron and palladium are subsequently bonded to the fresh surface of the aluminum electrode (21). Finally, the electrically conductive polymer bump (22) is formed over the aluminum electrode (21). The Tiron and palladium improve the electrical contact between the conductive polymer bump (22) and the aluminum electrode (21) thereby reducing the contact resistance. The Tiron also inhibits corrosion of the aluminum electrode (21) and enhances the conductivity by catalytically shrinking the cyanate ester conductive bump.

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Chandler, AZ, United States of America

Naresh C Saha