Qualcomm Incorporated

Narendra Singh Mehta

Todd Robert Sutton

Sandeep Chaman Dhar

Lennart Karl-Axel Mathe

Gordon P Lee

Chris M Rosolowski

Adrian M Stenzel

Siegfried W Breitmeier

An electronic device is described. The electronic device includes a first port. The electronic device also includes a second port. The electronic device further includes a multiphase charger. The multiphase charger includes a first buck. The multiphase charger also includes a second buck. The multiphase charger further includes a first port switch. The multiphase charger also includes a second port switch. The multiphase charger further includes a reverse boost switch. The multiphase charger also includes a multiphase switch.

Multiphase charger

A method and apparatus for a boost converter topology for low battery voltage support. In the method, an input voltage is boosted by closing first through third switches and then opening a fourth switch to charge a capacitor. The first and second switches are then opened. The voltage is then doubled by closing the third and fourth switches to discharge the first capacitor into a second capacitor and charging a third capacitor. A further embodiment provides an additional method for selectively boosting an input voltage to an electronic device. The method first characterizes the efficiency of a circuit, and then determines a crossover point for a ratio of output voltage to input voltage, and then enabling or disabling a voltage boost converter based on the crossover point.

Boost converter topology for high efficiency and low battery voltage support

A method and apparatus for extending the driving capacity of a power management device are provided. The method involves determining an energy requirement for the operation of a power management device. Next, the method compares the energy requirement for the operation of a power management device with a capability of a first power device. If the energy requirement is greater than the energy requirement of the first power device, the energy is switched to a second power device of higher capacity. The apparatus includes: a first power device; a second power device connected in parallel to the first power device; a first inductor connected to the first power device and a capacitor connected to the first inductor; and a second inductor connected to a second power device and a capacitor connected to the second inductor.

Parallel arrangement of asynchronous buck converters for advanced power capability

An adaptive gate drive circuit that can generate a gate bias voltage with temperature compensation for a MOSFET is disclosed. The adaptive gate drive circuit may generate the gate bias voltage with variable drive capability to combat higher gate leakage current of the MOSFET at higher temperature. In one design, an apparatus includes a control circuit and a gate drive circuit. The control circuit generates at least one control signal having a variable frequency determined based on a sensed temperature of the MOSFET. For example, a clock divider ratio may be determined based on the sensed temperature of the MOSFET, an input clock signal may be divided based on the clock divider ratio to obtain a variable clock signal, and the control signal(s) may be generated based on the variable clock signal. The gate drive circuit generates a bias voltage for the MOSFET based on the control signal(s).

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Santa Clara, CA, United States of America

Narendra Singh Mehta