International Business Machines Corporation

Narayana V Sarma

Richard Anthony Conti

Steven G Barbee

Jonathan Daniel Chapple-Sokol

James Anthony O'Neill

Steven Paul Zuhoski

Donald Leslie Wilson

Justin W Wong

Justin Wai-Chow Wong

Richard Hsiao

Donald L Wilson

Alexander Kostenko

An apparatus in a chemical vapor deposition (CVD) system monitors the actual wafer/substrate temperature during the deposition process. The apparatus makes possible the production of high quality aluminum oxide films with real-time wafer/substrate control. An infrared (IR) temperature monitoring device is used to control the actual wafer temperature to the process temperature setpoint. This eliminates all atmospheric temperature probing. The need for test runs and monitor wafers as well as the resources required to perform the operations is eliminated and operating cost are reduced. High quality, uniform films of aluminum oxide can be deposited on a silicon substrates with no need for additional photolithographic steps to simulate conformality that are present in a sputtered (PVD) type application. The result is a reduction in required process steps with subsequent anticipated savings in equipment, cycle time, chemicals, reduce handling, and increased yield of devices on the substrate. The apparatus incorporates a heated source material, heated delivery lines, heated inert gas purge lines, a pressure differential mass flow controller, a control system with related valving, and a vacuum process chamber with walls that are temperature controlled as a complete source delivery system to accurately and repeatably provide source vapor for LPCVD deposition of aluminum oxide onto silicon substrates.

Apparatus for chemical vapor deposition of aluminum oxide

A method and apparatus for monitoring and controlling reactant vapors prior to chemical vapor deposition (CVD). The reactant vapors are monitored at full concentration without sampling as they are transported to a CVD reactor. Contaminants detected cause a process controller to switch the transport path to direct reactant vapors to a system pump.

Method of aluminum oxide low pressure chemical vapor deposition (LPCVD)

A process and apparatus for Al.sub.2 O.sub.3 CVD on silicon wafers using aluminum tri-isopropoxide in a high-volume production environment is presented. The conditions required to use ATI in a production environment and provide maximum utilization of ATI are first of all delivery of ATI via direct evaporation. The ATI source bottle is pumped out (bypassing substrates) until propene and isopropanol signals are reduced to 1% of process pressure before start of aluminum oxide deposition. Either IR spectroscopy or mass spectrometry can be used to provide a control signal to the microprocessor controller. Heating the supplied tetramer to 120.degree. C. for two hours assures complete conversion to trimer. The ATI is stored at 90.degree. C. to minimize decomposition during idle periods and allow recovery of trimer upon return to 120.degree. C. for two hours. During periods of demand, the ATI is held at 120.degree. C. to minimize decomposition.

Aluminum oxide LPCVD system

An apparatus in a chemical vapor deposition (CVD) system monitors the actual wafer/substrate temperature during the deposition process. The apparatus makes possible the production of high quality aluminum oxide films with real-time wafer/substrate control. An infrared (IR) temperature monitoring device is used to control the actual wafer temperature to the process temperature setpoint. This eliminates all atmospheric temperature probing. The need for test runs and monitor waters as well as the resources required to perform the operations is eliminated and operating cost are reduced. High quality, uniform films of aluminum oxide can be deposited on a silicon substrates with no need for additional photolithographic steps to simulate conformality that are present in a sputtered (PVD) type application. The result is a reduction in required process steps with subsequent anticipated savings in equipment, cycle time, chemicals, reduce handling, and increased yield of devices on the substrate. The apparatus incorporates a heated source material, heated delivery lines, heated inert gas purge lines, a pressure differential mass flow controller, a control system with related valving, and a vacuum process chamber with walls that are temperature controlled as a complete source delivery system to accurately and repeatably provide source vapor for LPCVD deposition of aluminum oxide onto silicon substrates.

Aluminum oxide low pressure chemical vapor deposition (LPCVD)

Growing community of inventors

Dutchess County, NY, United States of America

Narayana V Sarma