Western Digital Technologies, Inc.

Sandisk Technologies Inc.

Narayan K

Aneesh Puthoor

Sateesh Desireddi

Arun Thandapani

Gopu S

Piyush Anil Dhotre

Dharmaraju Marenahally Krishna

Divya Prasad

Thendral Murugaiyan

Salil Kale

Shreejith Kv

Apparatuses, systems, and methods are disclosed for read threshold adjustment using reference data for non-volatile memory. An apparatus may include an array of non-volatile memory cells and a controller. A controller may be configured to write a predetermined reference data pattern to a region of an array. A controller may be configured to read reference data from a region. A controller may be configured to set one or more read thresholds based on identifying differences between reference data and a predetermined reference data pattern.

Read threshold adjustment using reference data

Non-volatile memory and processes for reprogramming data posing a potential reliability concern are provided. A process is provided for distinguishing between cross-temperature effects and read disturb effects as part of determining whether to perform a maintenance operation such as reprogramming. A process is provided that compensates for cross-temperature effects while testing to determine whether to perform a maintenance operation. Applying temperature compensation attempts to remove cross-temperature effects so that testing accurately detects whether read disturb has occurred, without the effects of temperature. By reducing cross-temperature effects, maintenance operations can be more accurately scheduled for memory that has experienced read disturb, as opposed to cross-temperature effects.

Dynamic read table block filter

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Bengaluru, India

Narayan K