Samsung Electronics Co., Ltd.

Nara Kim

Yoosang Hwang

Jiyoung Kim

Hyun-Woo Chung

Daeik Kim

Sung Hee Lee

Jemin Park

Kang-Uk Kim

Hyeongsun Hong

Chiho Kim

Zhiliang Xia

Dae Sin Kim

Gyoyoung Jin

Kyuhyun Lee

A method of fabricating a semiconductor device includes providing a semiconductor substrate having a first surface and a second surface opposite the first surface, forming an alignment key and a connection contact that penetrate a portion of the semiconductor substrate and extend from the first surface toward the second surface, forming a first circuit on the first surface of the semiconductor substrate such that the first circuit is electrically connected to the connection contact, recessing the second surface of the semiconductor substrate to form a third surface exposing the alignment key and the connection contact, and forming a second circuit on the third surface of the semiconductor substrate such that the second circuit is electrically connected to the connection contact.

Semiconductor devices and methods for fabricating the same

A test method of a semiconductor device and a semiconductor test apparatus. The test method includes providing a semiconductor device including a substrate having an active region and an isolation region, a volatile device cell including a gate insulation layer and a gate on the active region, a junction region in the active region, a capacitor connected to the junction region, and a passing gate on the isolation region, providing a first test voltage to the gate and a second test voltage greater than the first test voltage to the passing gate to deteriorate interfacial defects of the gate insulation layer, and measuring retention characteristics of the volatile device cell.

Method for testing retention characteristics of semiconductor device having a volatile device cell and semiconductor test apparatus

Growing community of inventors

Seongnam-si, South Korea

Nara Kim