Screen Holdings Co., Ltd.

Dainippon Screen Mfg. Co., Ltd.

Naozumi Fujiwara

Katsuhiko Miya

Masayuki Otsuji

Hiroaki Takahashi

Yuta Sasaki

Masahiko Kato

Jun Sawashima

Toru Edo

Yu Yamaguchi

Ayumi Higuchi

Akira Izumi

Shota Iwahata

Tomonori Kojimaru

Seiji Ano

Naoko Yamaguchi

Kazunori Fujikawa

Yuji Sugahara

Kana Komori

Tatsumi Shimomura

Tomomasa Ishida

A sublimable substance is selected on the basis of whether the surface of a pattern is hydrophilic or hydrophobic. In cases where the surface of a pattern is hydrophilic, a solvent for hydrophilic cases is selected, said solvent having lower solubility in water than the selected sublimable substance; and in cases where the surface of a pattern is hydrophobic, a solvent for hydrophobic cases is selected, said solvent having lower solubility in oils than the selected sublimable substance. The selected sublimable substance is dissolved in the selected solvent.

Method for producing liquid containing sublimable substance, substrate drying method, and substrate processing apparatus

A pre-drying processing liquid containing a sublimable substance that changes to gas without passing through to a liquid and a solvent in which the sublimable substance dissolves is supplied to a front surface of a substrate on which a pattern has been formed. Thereafter, the solvent is evaporated from the pre-drying processing liquid on the front surface of the substrate to thereby form a solidified body containing the sublimable substance on the front surface of the substrate. Thereafter, the solidified body is sublimated and thereby removed from the front surface of the substrate. A value acquired by multiplying a ratio of the thickness of the solidified body to the height of the pattern by 100 is greater than 76 and less than 219.

Substrate processing method, substrate processing apparatus and pre-drying processing liquid

For a substrate having a diameter of 300 millimeters and a main surface on which a lot of pattern elements standing upright are formed, a processing using a processing liquid is performed on the main surface. After the processing using the processing liquid, a filler solution is applied onto the main surface. In the application process of the filler solution, pure water is supplied onto the main surface which faces upward while the substrate is in a horizontal state, and a liquid film of the pure water which covers the main surface and has a thickness not larger than 5 micrometers is formed by rotating the substrate. Then, the filler solution containing a water-soluble filler is supplied onto a center portion of the main surface while the substrate is rotated at the number of rotation not smaller than 300 times and not larger than 500 times per minute.

Application method

The controller is programmed to cause a low-surface-tension liquid supply unit to supply a liquid film of a low-surface-tension liquid to a front surface of a substrate so as to form a liquid film of the low-surface-tension liquid. The controller is programmed to control the substrate rotating unit and the inert gas supply unit so that an inert gas is supplied toward the rotational center position while rotating the substrate, thereby forming an opening spreading from the rotational center position to be formed in the liquid film, and enlarging the opening in a direction away from the rotational center position, and to control the landing-position changing unit to change the landing position of the low-surface-tension liquid to at least two positions except the rotational center position in accordance with enlargement of the opening so that the landing position is placed outside the peripheral edge of the opening.

Substrate processing apparatus and substrate processing method

A large number of pattern elements stands upright on an upper surface of a substrate. After the upper surface of the substrate has been processed using a processing liquid, liquid filling processing for filling the upper surface with a filler solution is performed, in which the filler solution having a viscosity of three centipoises or more is applied to a central part of the upper surface. Then, by rotating the substrate at 1000 revolutions per minute or less, the processing solution adhering to the entire upper surface is replaced by the filler solution, and a solution layer of a predetermined thickness is formed. In this way, making the viscosity of the filler solution relatively high and making the centrifugal force acting at the time of rotating the substrate relatively low suppresses deformation of the pattern elements at the time of filling with a filler that uses the filler solution.

Filler layer forming method

A substrate processing apparatus includes a rotating holder for a substrate, a first nozzle used to eject a jet flow, a second nozzle used to discharge a continuous flow, and a nozzle moving unit integrally moving the first and second nozzles. A landing position of the continuous flow is located closer to a rotation center than a landing position of the jet flow is. At least movement paths of the landing positions of the jet flow and the continuous flow or flow directions of the continuous flow and the jet flow are different from each other. The movement paths are made to be different from each other by locating the landing position of the continuous flow downstream of the movement path of the landing position of the jet flow. The flow directions are made to be different from each other by tilting the continuous flow.

A substrate treating apparatus includes a rotating and holding unit that rotates a substrate, a first supply source that supplies first pure water having a first temperature, a second supply source that supplies second pure water having a second temperature higher than the first temperature, a treatment solution supply unit that supplies a treatment solution to a central section of an upper surface of the substrate, a first supply unit that supplies a first liquid containing the first pure water to a central section of a lower surface of the substrate, a second supply unit that supplies a second liquid containing the second pure water to a peripheral section and an intermediate section of the lower surface, and a heat amount control unit that independently controls an amount of heat to be supplied by the first supply unit and an amount of heat to be supplied by the second supply unit.

Substrate treating apparatus and method of treating substrate

DIW in an excessively cooled state is supplied as a solidification liquid to a substrate W, and a solidified material of the DIW is formed by a landing impact on the substrate W. This makes the use of a gaseous refrigerant necessary to form a solidified material unnecessary, eliminates the need for a facility to generate the gaseous refrigerant, shortens a processing time and further enables running cost and the like to be suppressed.

Substrate processing method and substrate processing apparatus

A cooling gas discharge nozzleis arranged above an initial position P(Rin) distant from a rotation center P(0) of a substrate W toward the outer edge of the substrate W and supplies a cooling gas to the initial position P(0) of the rotating substrate W to solidify DIW adhering to an initial region including the initial position P(Rin) and the rotation center P(0). Following formation of an initial solidified region FR, a range to be solidified is spread toward the outer edge of the substrate W and all the DIW (liquid to be solidified) adhering to a substrate surface Wf is solidified to entirely freeze a liquid film LF.

A cooling gas is discharged from a cooling gas discharge nozzle toward a local section of a front surface of a substrate on which a liquid film is formed. And then the cooling gas discharge nozzle moves from a rotational center position of the substrate toward an edge position of the substrate along a moving trajectory while the substrate is rotated. As a result, of the surface region of the front surface of the substrate, an area where the liquid film has been frozen (frozen area) expands toward the periphery edge from the center of the front surface of the substrate. It is therefore possible to form a frozen film all over the front surface of the substrate while suppressing deterioration of the durability of the substrate peripheral members since a section receiving supply of the cooling gas is limited to a local area on the front surface of the substrate.

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Kyoto, Japan

Naozumi Fujiwara