Chisso Corporation

Nec Corporation

Jnc Corporation

Chisso Petrochemical Corporation

Naoyuki Yoshida

Kazutoshi Miyazawa

Yuichi Yamamoto

Tetsuya Ogawa

Kisei Kitano

Teruyo Sugiura

Yasuyuki Goto

Yasuyuki Koizumi

Masakazu Kaneoya

Kunio Ogasawara

Shigeru Sugimori

Manabu Uchida

Toyoshiro Isoyama

Kazunori Nigorikawa

Yoshito Furukawa

Hiroshi Morita

Hitoshi Yano

Shinichi Saito

Hiromichi Inoue

Kouji Ohno

Makoto Ushioda

Kazushi Ishida

Shuji Sasaki

Atsushi Kimura

Seiichi Takano

Mamoru Fujita

Jun Hiraki

Shigeyuki Aoyama

Ippei Yamaoka

Yasuo Urata

Naoto Yamada

Akiko Yoda

Reiko Katoh

Masamichi Mutoh

Ohno Kouji

Takuo Ikeda

Fumitaka Ohizumi

Syuji Sasaki

The present invention provides a method for imparting bacteriostatic effect to a textile product by immersing the textile product for 20 minutes or more in an aqueous solution containing a cationic polypeptide at a concentration of 250 ppm or more, which solution has a temperature of 25&#xb0; C. or more. By bacteriostatically treating a textile product in accordance with such method, the bacteriostatic effect is not reduced and thus retained even after the textile product is washed for a plurality of times.

Bacteriostatically treating method

The invention provides a metal salt of a crosslinked cellulose derivative represented by the following formula (I), wherein the degree of substitution of the hydroxyl group of glucose unit of the crosslinked cellulose derivative by a functional group a is 1 or more.R&#x2014;O&#x2014;A&#x2003;&#x2003;(I){In the formula (I), R represents a crosslinked cellulose residue and A represents a functional group a having cation-exchange ability.}

Metal salt of crosslinked cellulose derivative

The present invention provides a compound selected from sulfated cellulose and salts thereof which can be used as an active ingredient for a cutaneous external preparation produced intending to prevent, soften, improve or cure atopic cutaneous symptoms and the like and which are excellent in a hydrolytic resistance, and dermatitis therapeutic agents and cosmetics using the same.

Compound selected from sulfated cellulose and salts thereof and dermatitis therapeutic agent

Intermediate compounds, including 2-(t-butyldimethylsilyloxymethyl)-3,4-[(dimethylmethylene)dioxy]-5-hydroxy-tricyclo[5.2.1.0]dec-8-ene, which are useful for the synthesis of neplanocin A having strong antitumor activity. Improved processes for the preparation of neplanocin A, starting from optically active 2-hydroxymethyl-5-hydroxy-tricyclo[5.2.1.0]deca-3,8-diene and via a key step comprising a retro-Diels-Alder reaction of the above intermediate.

Intermediates and improved processes for the preparation of neplanocin A

Intermediate compounds, including 2-(t-butyldimethylsilyloxymethyl)-3,4-[(dimethylmethylene)dioxy]-5-hydroxy-tricyclo[5.2.1.0dec-8-ene, which are useful for the synthesis of neplanocin A having strong antitumor activity. Improved processes for the preparation of neplanocin A, starting from optically active 2-hydroxymethyl-5-hydroxy-tricyclo[5.2.1.0]deca-3,8-diene and via a key step comprising a retro-Diels-Alder reaction of the above intermediate.

Intermediate compounds, including 2-(t-butyldimethylsilyloxymethyl)-3,4-&lsqb;(dimethylmethylene)dioxy&rsqb;-5-hydroxy-tricyclo&lsqb;5.2.1.0 &rsqb;dec-8-ene, which are useful for the synthesis of neplanocin A having strong antitumor activity. Improved processes for the preparation of neplanocin A, starting from optically active 2-hydroxymethyl-5-hydroxy-tricyclo&lsqb;5.2.1.0 &rsqb;deca-3,8-diene and via a key step comprising a retro-Diels-Alder reaction of the above intermediate.

A semiconductor substrate has an element formation region and a scribe line region surrounding the element formation region. A metal wiring layer is formed so as to cover end portions of a plurality of interlayer insulating films over the entire periphery of the element formation region and includes cut portions at the corner of the element formation region. Then, a SOG film is formed on the entire surface of the substrate by spin coating, at that time, material of the SOG film flows out through the cut portion toward the scribe line region to prevent a SOG puddle from forming at the corner of the element formation region.

Semiconductor device and method with improved flat surface

Intermediate compounds, including 2-(t-butyldimethylsilyloxymethyl)-3,4-&lsqb;(dimethylmethylene)dioxy&rsqb;-5-hydroxy-tricyclo&lsqb;5.2.1.0,&rsqb;dec-8-ene, which are useful for the synthesis of neplanocin A having strong antitumor activity. Improved processes for the preparation of neplanocin A, starting from optically active 2-hydroxymethyl-5-hydroxy-tricyclo&lsqb;5.2.1.0,&rsqb;deca-3,8-diene and via a key step comprising a retro-Diels-Alder reaction of the above intermediate.

A semiconductor memory device comprises a bottom electrode of a capacitor connected to a source region of a semiconductor substrate through a contact plug formed in a portion of a through-hole. The remaining portion of the through-hole has a side-wall film, on which a portion of the bottom electrode film is disposed. The two-level structure of the through-hole improves the step coverage of the side-wall film and avoids over-etching of the silicon substrate.

Semiconductor device having a through-hole of a two-level structure

A semiconductor stacked type dynamic random access memory device has a node contact hole formed in an inter-level insulating layer and a storage electrode held in contact with a source region of an access transistor through the node contact hole, and the node contact hole and the storage electrode are patterned by using a photo-lithography and an etching, wherein a photo-resist mask for the node contact hole is different in thickness from a photo-resist mask for the storage electrode by value equivalent to a half of the period of the periodicity representative of sensitized characteristics of the photo-resist in the presence of an optical standing wave in the photo-resist masks, thereby keeping the nesting tolerance between the two patterns.

Process for exactly transferring latent images in photo-resist layer

In a semiconductor device manufacturing method, a first insulating film is formed on a semiconductor substrate. A contact hole is selectively formed in the first insulating film. A first conductive film is formed on the first insulating film to fill the interior of the contact hole. A second insulating film is formed on the first conductive film. A second conductive film is formed on the second insulating film. The second insulating film and the second conductive film are patterned to leave the second insulating film and the second conductive film only immediately above the contact hole. A third conductive film is formed on the surfaces of the first conductive film, the second insulating film, and the second conductive film. The third conductive film on the first and second conductive films is removed to form a cylindrical lower electrode consisting of the third conductive film left only on the side surfaces of the second insulating film and the second conductive film. An exposed portion of the first conductive film and the second conductive film are removed to expose the first and second insulating films. The second insulating film is removed to expose the first conductive film. A third insulating film and a fourth insulating film serving as an upper electrode are formed.

Method of manufacturing semiconductor device

Both enantiomers of optically active 2-alkanol are produced by transesterification reaction of racemic 2-alkanol and aliphatic acid 2,2,2-trichloroethylester in the presence of enzyme derived from Candida antarctica. Both enantiomers of optically active 2-alkanol, which are useful as starting materials of liquid crystal materials and have optical purity of 99% or more, can be efficiently produced.

Method for producing an optically active 2-alkanol

A method for producing an optically active 3-hydroxy-hexanoic acid represented by formula (1) and the enantimer by asymmetrically hydrolyzing a racemic ester of 3-hydroxyhexanoic acid in the presence of a lipase derived from porcine pancreas. ##STR1##

Method for producing optically active 3-hydroxyhexanoic acids using

A production process with good efficiency, and applicable to production of a synthetic intermediate of a new quinolone anti-fungus agent CP-99219, is provided. A production process of an intermediate of a new quinolone compound expressed by the formula (IV) ##STR1## wherein R.sup.3 represents a benzyl group, a diphenylmethyl group, etc. and R.sup.4 represents a linear or branched alkyl group of 1 to 8C, a cycloalkyl group, etc. which process employs as a starting substance, a cyclopropanetricarboxylic acid triester expressed by the formula (I) ##STR2## wherein R.sup.1 and R.sup.2 represent a linear or branched alkyl group, a cycloalkyl group, an aryl group or an aralkyl group, and passes through seven steps.

Growing community of inventors

Ichihara, Japan

Naoyuki Yoshida