Sumco Corporation

Asahi Kasei Kabushiki Kaisha

Naoyuki Wada

Yu Minamide

Makoto Takemura

Yoshinori Yamada

Hiroyuki Kishi

Kazutoshi Inoue

Takayuki Kihara

Masaya Sakurai

Keiko Matsuo

Masahiko Egashira

Yasutaka Takemura

Shoji Nogami

A carrier is formed in ring shape having a bottom surface mounted on an upper surface of a susceptor, an upper surface that contacts and supports an outer edge of a back surface of the wafer, an outer peripheral side wall surface and an inner peripheral side wall surface, and a gas vent hole is provided to penetrate between a space partitioned by the wafer, the carrier and the susceptor and a back surface of the susceptor.

Vapor deposition device and carrier used in same

A control device includes a calculation unit generating control information for an epitaxial growth apparatus; and a storage unit storing measurement values for an epitaxial film formed by the epitaxial growth apparatus and measurement values for epitaxial films formed by a plurality of other epitaxial growth apparatuses that are provided in the same production line as the epitaxial growth apparatus that needs new control. The calculation unit generates and outputs information for controlling at least one of the supply time of a source gas and the flow rate of a dopant gas in the epitaxial growth apparatus based on the measurement values for the epitaxial film formed by the epitaxial growth apparatus that needs new control and the measurement values of the epitaxial films formed by the other epitaxial growth apparatuses in the same production line that are in operation concurrently with the epitaxial growth apparatus.

Control device and control method for single-wafer processing epitaxial growth apparatus, and epitaxial wafer production system

Cladding in which at least two layers of alloys are joined, the cladding having high wear resistance, high workability, and excellent strength at the joining interface of the alloys. The cladding is composed of two or more layers including a first alloy and a second alloy joined to the first alloy. The hardness of the second alloy of the cladding is greater than that of the first alloy, and the difference in hardness between the first alloy and the second alloy is at least HRC 44. When a shearing test based on JIS G 0601 is performed on the cladding, the breakage is on the first alloy side.

Cladding and method for manufacturing the same

Using the first robot, the carrier standing by in the load lock chamber is deposited into the reaction chamber without mounting the wafer before processing, and cleaning gas is supplied while the reaction chamber is maintained at a predetermined cleaning temperature, and the carrier that has been cleaned in the reaction chamber is transferred to the load lock chamber using the first robot. The carrier and susceptor are cleaned at a predetermined frequency. After that, the carrier is carried out from the reaction chamber, and the reaction gas is supplied to the reaction chamber to form a polysilicon film on the surface of the susceptor.

Vapor deposition method and vapor deposition device

Using the first robot, the carrier standing by in the load lock chamber is deposited into the reaction chamber without mounting the wafer before processing, and cleaning gas is supplied while the reaction chamber is maintained at a predetermined cleaning temperature, and the carrier that has been cleaned in the reaction chamber is transferred to the load lock chamber using the first robot. The carrier is cleaned at a predetermined frequency.

A vapor deposition device is provided that can ameliorate or improve the LPD quality. A vapor deposition device includes a first holder that supports a carrier at a topmost-level and a second holder that supports the carrier under the first holder in a load-lock chamber, and a second robot mounts a before-treatment wafer extracted from a wafer storage container on the carrier standing by at the first holder in the load-lock chamber.

Vapor deposition device

For correction of a source gas supply time and a dopant gas flow rate, a calculation unit in an epitaxial wafer production system performs not only correction based on a result of comparing measured thickness and resistivity of an epitaxial film respectively with a target thickness range and a target resistivity range, but also correction based on a variation in total output value of upper and lower lamps.

Epitaxial wafer production system for performing a correction based on variation in total output value of upper and lower lamps

The amount of gas evacuation from a reaction chamber of an apparatus for manufacturing epitaxial wafers is controlled to any one of: a first amount of gas evacuation when an epitaxial film formation process is performed in the reaction chamber; a second amount of gas evacuation smaller than the first amount of gas evacuation when a gate valve is opened to load or unload a wafer between the reaction chamber and a wafer transfer chamber; and a third amount of gas evacuation larger than the first amount of gas evacuation until a purge process for a gas in the reaction chamber is completed after the epitaxial film formation process is completed in the reaction chamber.

Apparatus and method for manufacturing epitaxial wafer

Provided is a susceptor, capable of preventing occurrence of scratches on the back surface of a wafer attributable to lift pins, and reducing unevenness of the in-surface temperature distribution of the wafer. A susceptor according to one embodiment of this disclosure has a susceptor main body and a plate-shaped member, and when a wafer is conveyed, the front surface of the plate-shaped member ascended by lift pins supports the central part of the back surface of the wafer by surface contact. A separation space between the plate-shaped member and the susceptor main body, in a state in which the plate-shaped member is placed on the recessed part, enters further into the central side of the plate-shaped member, in a direction from the front surface to the back surface of the susceptor.

Susceptor and epitaxial growth device

Provided is a method of inspecting the back surface of an epitaxial wafer, capable of detecting pin mark defects in the back surface of the epitaxial wafer and quantitatively evaluating the defect size of individual point defects of the pin mark defects. The method of inspecting the back surface of an epitaxial wafer includes an imaging step of consecutively taking partial images of the back surface while moving the optical system using the scanning unit; an acquisition step of acquiring a full image of the back surface from the partial images; a detection step of detecting, in the full image, pin mark defects constituted by a set of a plurality of point defects present in the back surface of the silicon wafer; and a digitalization step of digitalizing the individual point defects to calculate the defect area of the individual point defects of the detected pin mark defects.

Method of inspecting back surface of epitaxial wafer, epitaxial wafer back surface inspection apparatus, method of managing lift pin of epitaxial growth apparatus, and method of producing epitaxial wafer

In a method for manufacturing an epitaxial wafer by which an epitaxial layer is formed on a surface of a silicon wafer arranged in a reactor by distributing a raw material gas in the reactor, a temperature of a susceptor at the time of carrying the silicon wafer into the reactor is adjusted in accordance with a resistivity of the silicon wafer. There is provided the method for manufacturing an epitaxial wafer, the method enabling reduction in generation of particles from friction of a back surface edge portion and the susceptor due to warpage of the wafer caused at the time of carriage into the reactor and occurrence of scratches on the silicon wafer back surface edge portion without requiring a complicated apparatus.

Method for manufacturing epitaxial wafer

When a mixed gas of trichlorosilane and dichlorosilane is used as source gas, a silicon layer is epitaxially grown on a surface of a silicon wafer within a temperature range of 1000 to 1100&#xb0; C., preferably, 1040 to 1080&#xb0; C. When dichlorosilane is used as source gas, a silicon layer is epitaxially grown on a surface of a silicon wafer within a temperature range of 900 to 1150&#xb0; C., preferably, 1000 to 1150&#xb0; C. According to this, a silicon epitaxial wafer, which has low haze level, excellent flatness (edge roll-off), and reduced orientation dependence of epitaxial growth rate, and is capable of responding to the higher integration of semiconductor devices, can be obtained, and this epitaxial wafer can be used widely in production of semiconductor devices.

Method for producing epitaxial wafer

To provide a manufacturing method for an epitaxial wafer that alleviates distortions on a back surface thereof due to sticking between a wafer and a susceptor, thereby preventing decrease in flatness thereof due to a lift pin. A manufacturing method for an epitaxial wafer according to the present invention includes: an oxide film forming step in which an oxide film is formed on a back surface thereof; an etching step in which a hydrophobic portion exposing a back surface of the semiconductor wafer is provided by partially removing the oxide film; a wafer placing step in which the semiconductor wafer is placed; and an epitaxial growth step in which an epitaxial layer is grown on a main surface of the semiconductor wafer; and the diameter of the lift pin installation circle provided on a circle on a bottom face of a susceptor is smaller than that of the hydrophobic portion.

Manufacturing method for epitaxial wafer

An object of the invention is to calibrate an upper pyrometer for indirectly measuring a substrate temperature at the time of epitaxial growth in a comparatively short time and with accuracy to thereby improve the quality of an epitaxial substrate. After calibrating an upper pyrometer by a thermocouple mounted to a temperature calibrating susceptor, a measured value of a lower pyrometer is adjusted to a calibrated value of the upper pyrometer. Then, a correlation line between substrate temperature indirectly measured by the upper pyrometer at the time of epitaxial growth onto a sample substrate and haze of a sample substrate measured immediately after epitaxial growth is set to indirectly measure a substrate temperature by the upper pyrometer at the time of epitaxial growth onto a mass-production substrate. Moreover, substrate temperature at the time of epitaxial growth onto the mass-production substrate is estimated by applying the haze of the mass-production substrate measured immediately after epitaxial growth to the correlation line and then a measured temperature of the upper pyrometer is adjusted to the estimated temperature.

Temperature control method of epitaxial growth apparatus

A process for producing a silicon wafer by conveying a (100) face silicon wafer into and from a treating furnace of a single wafer heat-treating apparatus or a vapor phase growth apparatus with a conveying blade having a mounting face capable of mounting only a specified region of the wafer inclusive of a center position of its rear face for subjecting the wafer to a heat treatment or a vapor phase growth, in which &#x3c;010&#x3e; or &#x3c;001&#x3e; orientation is shifted by a predetermined angle with respect to a transverse direction of the mounting face of the conveying blade.

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Tokyo, Japan

Naoyuki Wada