Tokyo Electron Limited

Daihen Corporation

Neomax Materials Co., Ltd.

Naoyuki Umehara

Koichi Nagami

Toshihiro Hayami

Norikazu Yamada

Manabu Iwata

Hiroki Endo

Ryuji Ohtani

Tadashi Gondai

Tsuyoshi Hasegawa

Kazunobu Fujiwara

Shunichi Ito

Kazutaka Sei

Tomomasa Nishida

Satoshi Maebashi

In a method of an embodiment, radio-frequency power is supplied to an electrode via a matching device from a radio-frequency power supply in order to generate plasma within a chamber. During the supply of the radio-frequency power, it is determined whether or not plasma is generated within the chamber from one or more parameters reflecting plasma generation within the chamber. When it is determined that plasma is not generated, a frequency of the radio-frequency power output from the radio-frequency power supply is adjusted to set the load side reactance of the radio-frequency power supply to zero or to bring the load side reactance close to zero.

Plasma generating method

Provided is a capacitively coupled plasma processing apparatus which improves a controllability of the RF bias function and reliably prevents unwanted resonance from being generated on a RF transmission line between a counter electrode and ground potential to enhance reliability of the plasma process. In the capacitive coupled type plasma processing apparatus, three kinds of RF powers from a first, second and third RF power supplies () are superimposed and applied to susceptor (lower electrode) (). In such a three-frequency superimposing and applying application scheme, the frequency-impedance characteristic around upper electrode () is considered to prevent a serial resonance from occurring on an RF transmission line around upper electrode () in consideration of all the low order frequencies of the IMD relevant to and affecting the plasma process. Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.

Plasma processing apparatus

An output of a modulated high frequency power is started from a high frequency power supply of a plasma processing apparatus. Here, a first period and a second period are repeated alternately. A moving average value of a load impedance of the high frequency power supply in a first sub-period in the past first period and a moving average value of a load impedance of the high frequency power supply in a second sub-period in the past first period are acquired. A frequency of the modulated high frequency power in the first sub-period and a frequency of the modulated high frequency power in the second sub-period are set according to the moving average values such that the load impedance of the high frequency power supply in the first sub-period and the load impedance of the high frequency power supply in the second sub-period approximate to a matching point.

Method for impedance matching of plasma processing apparatus

In a plasma processing apparatus, first to third RF power monitorsandare configured to monitor high frequency powers (progressive wave powers), which propagate on first to third high frequency power supply linesandfrom first to third high frequency power suppliesandtoward a load side, respectively, and high frequency powers (reflection wave powers), which propagate on the first high frequency power supply linesandfrom the load side toward the first to third high frequency power suppliesand, respectively, at the same time. A main controlleris configured to control the high frequency power suppliesandand matching devicesandbased on monitoring information sent from RF power monitorsand

In a plasma processing apparatus, a member for propagating high frequency from a high frequency power supply and/or to which the high frequency is applied. A power feed rod is electromagnetically shielded between a matching unit and a bottom plate of a chamber by a coaxial cylindrical conductor connected to a ground potential. A surface potential system disposed in an appropriate distance from the power feed rod in radius direction is installed in the cylindrical conductor, and measures in a non-contact state the electrostatic surface potential of the power feed rod through electrostatic capacitance and provides a controller with a surface potential detection signal including surface potential measurement value information. The controller performs a required signal processing or operation processing on the basis of the surface potential detection signal from the surface potential system, thereby obtaining the measurement value of the DC potential on the power feed rod.

An electrical joint forming member is held between adjacent conductive members included in a semiconductor device fabricating apparatus to reduce electrical resistance between those conductive members. The electrical joint forming member includes an elastic member made of a titanium sheet (75 &#x3bc;m thick, 2 mm wide) and having a surface covered with an aluminum layer (7 &#x3bc;m thick), the aluminum layer being formed by joining an aluminum sheet to the surface of the titanium sheet by cold-roll bonding.

Growing community of inventors

Miyagi, Japan

Naoyuki Umehara