Hitachi, Ltd.

Other

Hitachi-High-Technologies Corporation

Naoyuki Tamura

Tsunehiko Tsubone

Kazue Takahashi

Hiroyuki Shichida

Yoshifumi Ogawa

Youichi Ito

Kouji Nishihata

Atsushi Itou

Shigekazu Kato

Manabu Edamura

Tetsunori Kaji

Akitaka Makino

Motohiko Yoshigai

Masatsugu Arai

Sumio Okuno

Shinjiro Ueda

Hideaki Kamohara

Kazumasa Fujioka

Kazuaki Ichihashi

Muneo Mizumoto

Masanori Kadotani

Sumio Yamaguchi

Ryujiro Udo

Kenji Nakata

Norio Kanai

Kazuo Sato

Keizo Suzuki

Hiroki Kawada

Seiichi Watanabe

Yasumichi Suzuki

Shigeru Kobayashi

Sadayuki Okudaira

Saburo Kanai

Takao Kuroda

Hiroshi Saito

Katsuya Watanabe

Osami Matsushita

Shigeo Kato

Eisuke Nishitani

Yasuhide Matsumura

Kunihiro Takahashi

Yoshiteru Miyatake

Norihiro Uchida

Natsuyo Chiba

Susmu Tsuzuku

Hideya Aoki

Ken Ohmata

Ueda Shinjiro

Yoshitumi Ogawa

A vacuum processing method includes an atmospheric transfer step of transferring a wafer in atmospheric air to a vacuum transfer chamber using atmospheric transfer equipment disposed in atmospheric air, a vacuum transfer step of transferring the wafer received from the atmospheric transfer equipment to a position for a predetermined treatment within a vacuum processing chamber using vacuum transfer equipment disposed within the vacuum transfer chamber connecting the atmospheric transfer equipment and the vacuum processing chamber, a step of detecting the displacement of the wafer in a transverse direction with respect to a traveling direction near an ingress path of the wafer to the vacuum processing chamber by comparing a correct position of the wafer passing a line which is predetermined in advance with an actual position of said wafer being transferred by the vacuum transfer equipment, and a step of correcting the detected displacement of the wafer.

Vacuum processing method

A method and system of holding a substrate to decrease foreign substances on the back surface thereof. The substrate holding system includes a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface thereof to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts a cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact each other in the large portion of the remaining area.

Method of holding substrate and substrate holding system

A vacuum processing device includes at least one vacuum processing chamber for performing predetermined treatments to a wafer being transferred to a predetermined position within the chamber, an atmospheric transfer equipment for transferring a wafer in atmospheric air to a vacuum transfer equipment which is disposed within a vacuum transfer chamber connecting the atmospheric air and the vacuum processing chambers for transferring the wafer received from the atmospheric transfer equipment to the predetermined position within the vacuum processing chamber, and wafer position sensors disposed near the ingress path leading into the processing chamber for detecting the displacement of the wafer being transferred.

Vacuum processing device

A plasma processing apparatus provided with a holding stage of a system in which a temperature of an electrode block is controlled so as to control the temperature of a semiconductor wafer. The electrode block is provided with at least first and second independent temperature controllers on inner and outer sides thereof, and a slit for suppressing heat transfer is provided in the electrode block between the first and second temperature controllers.

Plasma processing apparatus

A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

There is provided a plasmar processing apparatus capable of positively controlling the temperature distribution of a semiconductor wafer during etching processing in a clear state, wherein an electrode block is provided with independent slits as coolant flow paths on the inner and outer peripheries and, at the same time, between these slits is formed a slit for suppressing heat transfer between the inner and outer peripheries, and owing to this slit for suppressing heat transfer, a uniform temperature in the electrode block is suppressed and thus it is possible to obtain an arbitrary independent temperature in the plane of the electrode block and positive and clear control of temperature distribution patterns can be performed.

In a method of holding a substrate and a substrate holding system, the amount of foreign substances on the back surface of the substrate can be decreased, and only a small amount of foreign substances transferred from a mounting table to the substrate. For this purpose, the substrate holding system has a ring-shaped leakage-proof surface providing a smooth support surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions which bear against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate is exposed to a cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed at a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact each other in the large portion of the remaining area.

Present invention provides a method of holding substrate and a substrate holding system where the amount of foreign substances on the back surface can be decreased, and a little amount of foreign substances may be transferred from a mounting table to a substrate. The substrate holding system comprises a ring-shaped leakage-proof surface having smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic ttraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

A substrate holding system is provided for holding a substrate in a substrate etching apparatus by using electrostatic force. An electrical insulating member is also provided having a top surface approximately at the same level as the treated surface of the substrate and having an inner side surface in adjacent relationship with a surface of the substrate forming the periphery of the substrate. The inner side surface of the electrical insulating member faces the periphery of the substrate in substantially parallel relationship with a direction normal to the treated surface of the substrate. A dielectric film is formed on one surface of a metallic member having a flow passage for circulating a coolant to control the temperature of the substrate. An electrically insulating material member is placed on and in contact with a surface of the metallic member. An electrically conductive material member grounded to a standard electric potential is placed on and in contact with a surface of the electrically insulating material member. Three kinds of members are overlaid and fixed to each other in order of the metallic member having the dielectric film, the electrically insulating material member and the standard electric potential member. A coolant hole penetrates from the standard electric potential member side to the coolant flow passage of the metallic member being formed, at least three through holes penetrating the three kinds of members being formed and movable members linked to a substrate transporting mechanism being inserted in the through holes.

Substrate holding system including an electrostatic chuck

Growing community of inventors

Kudamatsu, Japan

Naoyuki Tamura