Screen Holdings Co., Ltd.

Dainippon Screen Mfg. Co., Ltd.

Naoyuki Osada

Koji Hashimoto

Kentaro Sugimoto

Takahiro Yamaguchi

Ayumi Higuchi

Akihisa Iwasaki

Shota Iwahata

Eri Fujita

Tsuyoshi Mitsuhashi

Takuya Wada

Koji Hasegawa

Takuya Miyashita

Satoshi Segawa

Masashi Sawamura

The substrate processing apparatus includes common piping which guides a processing liquid to a branching portion, supply piping which guides the processing liquid from the branching portion to a chemical liquid nozzle, return piping which guides the processing liquid from the branching portion, and a discharge valve which changes a flow rate of the processing liquid supplied from the common piping to the branching portion. The discharge valve makes a valve element stationary at a plurality of positions including a discharge execution position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate larger than a maximum value of a suction flow rate and a discharge stop position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate smaller than the maximum value of the suction flow rate.

Substrate processing apparatus and substrate processing method

A discharge portis arranged inside a chamber. A circulation flow passagecirculates a processing liquid, while maintaining the processing liquid at a predetermined temperature. A discharge flow passageis branched from a circulation flow passageto guide the processing liquid to the discharge port. A return flow passageis connected to the discharge flow passageinside the chamberand allows the processing liquid running through the discharge flowpassageto flow back to the circulation flow passage

Substrate processing apparatus

A substrate processing apparatus includes a processing liquid distributing member that partitions, by an inner wall surface, at least part of a processing liquid distribution passage communicating with a discharge port, a processing liquid supplying unit that supplies the high-temperature processing liquid having a higher temperature than a room temperature to the processing liquid distribution passage, a temperature changing unit arranged to heat or cool an outer wall surface of the processing liquid distributing member from the outside to change a temperature of the processing liquid distributing member, and a controller that executes an equilibrium temperature maintaining step of maintaining the inner wall surface of the processing liquid distributing member at a thermal equilibrium temperature by controlling the temperature changing unit in a state where no processing liquid is supplied from the processing liquid supplying unit to the processing liquid distribution passage.

A spin base is caused to rotate at a number of revolutions of from 250 rpm to 350 rpm (first number of revolutions), and at the same time, a cleaning solution is supplied through a discharge head to a holding surface of a spin base while the upper end of a processing cup surrounding the spin base is placed below the holding surface. Thus, an outer upper surface of the processing cup is cleaned with the cleaning solution scattered from the holding surface. Then, the spin base is caused to rotate at a number of revolutions of from 350 rpm to 450 rpm (second number of revolutions) higher than the first number of revolutions, and at the same time, a cleaning solution is supplied through the discharge head onto the holding surface. Thus, a partition plate outside the processing cup is cleaned with the cleaning solution scattered from the rotating holding surface.

Method of cleaning substrate processing apparatus

A valve control unit includes a data reading/selecting unit, which reads each of signals transmitted onto a serial bus, and selects a flow rate data signal from among the read signals. Therefore, the valve control unit can acquire the flow rate data signal from the serial bus without allowing the flow rate data signal to pass via the master IC. As a result, it is made possible to ensure real time properties of feedback control, which adjusts a needle valve based on a measurement result of a flowmeter, while reducing a load applied to a CPU that controls the master IC. Moreover, it is not necessary to provide an additional instrument for transferring analog signals between slave devices, and accordingly, a size increase and cost increase of an apparatus can be suppressed.

Substrate treatment apparatus that controls respective units by master-slave method

Nozzle arms for holding discharge heads are caused by a pivotal driving part to move between a processing position above a substrate and a standby position outside a processing cup surrounding a substrate. When the nozzle arms having cleaned a substrate is placed at the standby position, a cleaning solution is ejected from a shower nozzle toward the nozzle arms arranged obliquely downward of the shower nozzle. The three nozzle arms are caused to move up and down such that the nozzle arms cut across a jet of a cleaning solution discharged obliquely downward, thereby cleaning the three nozzle arms in order. Then, a nitrogen gas is ejected from a drying gas nozzle and sprayed on the nozzle arms to remove the cleaning solution attached to the nozzle arms, thereby drying the nozzle arms.

Substrate processing apparatus and substrate processing method using processing solution

A spin base is caused to rotate at a number of revolutions of from 250 rmp to 350 rpm (first number of revolutions), and at the same time, a cleaning solution is supplied to a holding surface of a spin base while the upper end of a processing cup is placed below the holding surface. Thus, an outer upper surface of the processing cup is cleaned with the cleaning solution scattered from the holding surface. Then, the spin base is caused to rotate at a number of revolutions of from 350 rpm to 450 rpm (second number of revolutions) higher than the first number of revolutions, and at the same time, a cleaning solution is supplied onto the holding surface. Thus, a partition plate outside the processing cup is cleaned with the cleaning solution scattered from the rotating holding surface.

A nozzle of a nozzle device includes an arm pipe that extends in a horizontal direction and a downstream pipe formed so as to curve downward from one end of the arm pipe. In the nozzle, a metallic pipe is provided inside a second resin pipe. Moreover, a first resin pipe is provided inside the metallic pipe. A boss is attached to the tip of the metallic pipe between the first resin pipe and the second resin pipe. At the tip of the nozzle, an outer peripheral surface of the first resin pipe, an end surface of the second resin pipe and an end surface of the boss are welded by welding resin. In this way, the metallic pipe is reliably coated with the first resin pipe, the second resin pipe, the boss and the welding resin.

Nozzle and a substrate processing apparatus including the same

A substrate treating method and apparatus for treating a substrate by supplying a developing solution thereto while spinning the substrate. A nozzle having a plurality of discharge openings for discharging the developer is disposed such that the discharge openings are at different distances from the spin center of the substrate. The developer is discharged from the nozzle while the latter is moved radially of the substrate. The discharge openings then describe loci not overlapping one another over the substrate. The developer is evenly supplied over the substrate to promote the uniformity of development on the substrate surface.

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Kyoto, Japan

Naoyuki Osada