Sumitomo Special Metals Co., Ltd.

Hitachi Metals, Ltd.

Nippon Tungsten Co., Ltd.

Naoyuki Okamoto

Hiroyuki Okuda

Hiroyuki Ito

Shigeki Mohri

Toyoshige Sasaki

Osamu Nakano

Shin Mishima

Toshiki Kida

Shinroh Itoh

Shigeru Kawahara

Kazutoyo Shimizu

Makoto Fukuda

To provide a zinc oxide-based varistor that exhibits adequate characteristics without using antimony. Disclosed is a sintered body for a varistor, including zinc oxide as a main component; 0.6 to 3.0 mol % of bismuth oxide in terms of bismuth (Bi); 0.2 to 1.4 mol % of cobalt oxide in terms of cobalt (Co); 0.1 to 1.5 mol % of chrome oxide in terms of chrome (Cr); and 0.1 to 1.5 mol % of manganese oxide in terms of manganese (Mn), wherein the contents of antimony (Sb), a rare earth element and tin (Sn) are not more than a level of impurities.

Sintered body for varistor, multilayer substrate using same, and production method for these

A method for producing a single crystal scintillator material according to the present invention includes the steps of: providing a solvent including: at least one element selected from the group consisting of Li, Na, K, Rb and Cs; W and/or Mo; B; and oxygen; melting a Ce compound and a Lu compound that have been mixed with the solvent by heating the mixture to a temperature of 800&#xb0; C. to 1,350&#xb0; C.; and growing a single crystal by cooling the compounds melted. The single crystal is represented by the compositional formula (CeLu)BO, in which the mole fraction x of Ce satisfies 0.0001&#x2266;x&#x2266;0.05.

Single crystal scintillator material, method for producing same, radiation detector and PET system

A single crystal scintillator material according to the present invention includes a single crystal portion that is represented by the compositional formula (CeLu)BOin which the mole fraction x of Ce satisfies 0.0001&#x2266;x&#x2266;0.05.

Single crystal scintillator material and method for producing the same

Wafer for magnetic head and magnetic head

The thin film magnetic head substrate of this invention includes an alumina titanium carbide base plate and an aluminum oxide layer formed on the alumina titanium carbide base plate. The alumina titanium carbide base plate has a surface modified layer in a surface portion facing the aluminum oxide layer, and the surface modified layer includes aluminum titanate.

Thin film magnetic head thin film magnetic head substrate and method for fabricating such substrate

A method for cutting a ceramic base plate with which the process efficiency is improved, a stable cutting resistance can be maintained during the cutting process, and excellent process precision can be achieved, a wherein supporting plate which is used for the cutting of the ceramic base plate has a structure of a sealed surface layer which has been impregnated with glass components into both surfaces of the sintered porous alumina body. The supporting plate is fixed on a stage of a cutting machine along a forward direction of the rotary cutting blade through a vacuum-absorption and the ceramic base plate as a work-piece is wax-bonded to the supporting plate. While rotating the rotary cutting blade, first of all, the supporting plate is cut so that the blade is dressed/sharpened with the sintered porous alumina body. In the next step, the ceramic base plate is cut and the cutting whetstone blade cuts the supporting plate to a certain depth, so that the rotary cutting blade will contact to the ceramic base plate, then sintered porous alumina body of the supporting plate. As a result, the dressing/sharpening the blade can always be performed, and at the same time the ceramic base plate can be cut while keeping the cutting resistance at low level.

Method of cutting a ceramic base plate

To provide a substrate material having characteristics suitable to a magnetic head for attaining high recording density. A substrate material for a magnetic head comprising a matrix phase of a carbide of one or more of Ti, W and Ta and a dispersion phase of an oxide of one or more of Al.sub.2 O.sub.3, CrO.sub.3, and ZrO.sub.2, in which the material comprises 60 to 95 vol % of the matrix phase of the carbide. Further, a single phase in which the ingredients of carbides as the matrix phase comprise (Ti.sub.j W.sub.m Ta.sub.n)C.sub.x is preferred. Further, oxygen and/or nitrogen may be solid-solubilized in the carbide MeC of the matrix phase wherein Me is one or more of Ti, W, and Ta.

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Osaka, Japan

Naoyuki Okamoto