Sumitomo Electric Device Innovations, Inc.

Naoyuki Miyazawa

Yuichi Hasegawa

Provided is an amplifier device including a semiconductor chip, a package, a first feedback circuit, and a second feedback circuit. The package includes a metal base, an insulating side wall, an input lead, and an output lead. The input lead is connected to a gate pad group of the semiconductor chip. The output lead is connected to a drain pad group of the semiconductor chip. Each of the feedback circuits includes a dielectric substrate disposed on the metal base, a feedback resistor located on the dielectric substrate, and a capacitor connected in series to the feedback resistor. Each of the feedback circuits is connected between the gate pad group and the drain pad group. The feedback circuits are located respectively on the base on one side and the other side of the semiconductor chip in an extension direction of a first and a second end edge.

Amplifier device

A semiconductor amplifierincludes transistorsandmounted side by side on a bottom platein a space in a package, a matching circuitmounted between the transistorson the bottom plate, a matching circuitmounted on an opposite side of the transistorfrom the transistoron the bottom plate, an input terminal Tinstalled on one side of a wiring substrate, an output terminal Tinstalled on the other side of the wiring substrate, and gate bias terminals Tand Tand drain bias terminals Tand Tinstalled at positions with the input terminal Tand the output terminal Tof the wiring substrate, and the transistor, the matching circuit, the transistor, and the matching circuitare linearly placed between the input terminal Tand the output terminal T.

Semiconductor amplifier

An amplifier module that implements two or more amplifying units connected in series is disclosed. The amplifier module includes a package, input and output terminals, two or more amplifying units including the first unit and the final unit, an output bias terminal for supplying an output bias to one of amplifying units except for the final unit, and an input bias terminal for supplying an input bias to another one of the amplifying units except for the first unit. A feature of the amplifier module is that the output bias terminal and the input bias terminal are disposed in axial symmetry with respect to a reference axis connecting the input terminal with the output terminal in one side of the package.

Amplifier module

A semiconductor amplifierincludes transistorsandmounted side by side on a bottom platein a space in a packagea matching circuitmounted between the transistorson the bottom platea matching circuitmounted on an opposite side of the transistorfrom the transistoron the bottom platean input terminal Tinstalled on one side of a wiring substratean output terminal Tinstalled on the other side of the wiring substrateand gate bias terminals Tand Tand drain bias terminals Tand Tinstalled at positions with the input terminal Tand the output terminal Tof the wiring substrateand the transistorthe matching circuitthe transistorand the matching circuitare linearly placed between the input terminal Tand the output terminal T.

A semiconductor device that outputs a radio-frequency (RF) signal with high power is disclosed. The semiconductor device includes a housing, a semiconductor chip, an impedance converter, a capacitor, and a bonding wire. The housing includes a heat sink, an output lead terminal, and a bias terminal electrically isolated from the output lead terminal. The semiconductor chip is mounted on the heat sink of the housing. The impedance converter provides an input port, an output port, and an intermediate port between the input port and the output port thereof. The capacitor is mounted on the heat sink and between the impedance converter and the output lead terminal. The bonding wire connects the bias lead terminal with the intermediate port.

Semiconductor device and amplifier apparatus

An amplifier includes: a package which includes a pair of edge portions; an input terminal which is provided in the edge portion; output terminals which are provided in the edge portion; a first-stage FET chip which includes an input port directly connected to the input terminal by a bonding wire; a first-stage terminal which is provided in the edge portion and is directly connected to an output port of the first-stage FET chip by a bonding wire; a second-stage terminal which is provided in the edge portion; a second-stage FET chip which includes an output port directly connected to output terminals and by a bonding wire; and an impedance matching capacitor element of which one electrode is connected to the second-stage terminal and the input port of the second-stage FET chip.

Amplifier

There is provided a method for testing a switching circuit including a first FET connected between input/output terminals, a capacitor connected between one of the input/output terminals and the first FET, and a second FET that is connected in parallel with the capacitor and has a gate electrode connected to a ground terminal. The method includes, applying a potential that sets the second FET to a conducting state to the ground terminal, and testing a DC test for the first FET via the second FET.

Growing community of inventors

Yokohama, Japan

Naoyuki Miyazawa