Toshiba Memory Corporation

Kioxia Corporation

Naoyuki Kondo

Yuuichi Tatsumi

Masato Endo

Yoshiko Kato

Kazunori Masuda

Yukio Nishida

Hiromitsu Harashima

Tsutomu Takahashi

Shinichi Maruyama

Naoya Kami

A semiconductor device according to an embodiment includes a semiconductor chip, a semiconductor element, a stacked body, and a structure body. The semiconductor chip includes a first surface, a second surface, and a side surface between the first surface and the second surface. The semiconductor element is provided in the center of the semiconductor chip when viewed from the normal direction of the first surface. The stacked body is provided at the outer peripheral end portion of the semiconductor chip when viewed from the normal direction and includes a plurality of first layers and a plurality of second layers alternately stacked in the normal direction. The structure body is provided in at least a part between the semiconductor element and the side surface when viewed from the normal direction and extending from a position higher than the stacked body to a position lower than the stacked body.

Semiconductor device

A semiconductor device according to an embodiment, includes a plurality of wires, a first dielectric film, and a second dielectric film. The plurality of wires are arranged above a semiconductor substrate so as to extend in a first direction and aligned via a first cavity. The first dielectric film has a plurality of portions arranged above the plurality of wires so as to extend in a second direction substantially perpendicular to the plurality of wires and aligned along the first direction via a second cavity leading to the first cavity. The second dielectric film is formed above the first dielectric film so as to cover the second cavity.

Semiconductor device and method for fabricating semiconductor device

Growing community of inventors

Kamakura, Japan

Naoyuki Kondo