Semiconductor Energy Laboratory Co., Ltd.

Tdk Corporation

Sharp Kabushiki Kaisha Corporation

Tkd Corporation

Naoya Sakamoto

Shunpei Yamazaki

Takeshi Fukada

Yukio Yamauchi

Michio Arai

Mitsufumi Codama

Nobumitsu Amachi

Toru Takayama

Mitsunori Sakama

Kazushi Sugiura

Hiroki Adachi

Ichiro Takayama

Yasuyuki Arai

Masahiko Hayakawa

Hiroshi Shibata

Taketomi Asami

Ritsuko Kawasaki

Takashi Inushima

Jun Koyama

Setsuo Nakajima

Takahiro Sato

Takayuki Cho

Kengo Akimoto

Masaaki Hiroki

Keiji Sato

Shigenori Hayashi

Tetsunori Maruyama

Masaaki Ikeda

Isamu Kobori

Katsuto Nagano

Shunsuke Koshioka

Mitsufumi Kodama

Nobuo Furukawa

Ichirou Takayama

Hisato Shinohara

Takashi Inuzima

Kenichi Okazaki

Masami Jintyou

Yoshiaki Oikawa

Yoshifumi Tanada

Shingo Eguchi

Toshiji Hamatani

Kensuke Yoshizumi

Tetsuhiro Tanaka

Koji Ono

Mitsuhiro Ichijo

Yoshitaka Yamamoto

Yasutaka Nakazawa

Takashi Fukui

Takuya Matsuo

Seiji Yasumoto

Takashi Ohtsuki

Hiroshi Matsukizono

Rai Sato

Yosuke Kanzaki

Yamato Aihara

Hiroto Shinoda

Takeshi Fukuda

Tetsuya Ohshima

Mitsunri Sakama

Takashi Fuki

The semiconductor device includes an oxide semiconductor; a source electrode and a drain electrode in contact with the oxide semiconductor; a gate insulating film over the oxide semiconductor, the source electrode, and the drain electrode; and a gate electrode overlapping the oxide semiconductor, part of the source electrode, and part of the drain electrode with the gate insulating film positioned therebetween. The source electrode and the drain electrode each include a Cu&#x2014;X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti), and the thickness of a region of the oxide semiconductor over which neither the source electrode nor the drain electrode is provided is smaller than the thicknesses of regions of the oxide semiconductor over which the source electrode and the drain electrode are provided.

Semiconductor device and method for manufacturing the same

The present invention focuses on a structure in which an auxiliary wiring for increasing the conductivity of an upper electrode is provided on the substrate side. The conductive auxiliary wiring of a light-emitting device is provided over a substrate, and an upper portion of the auxiliary wiring protrudes in a direction parallel to the substrate. Further, an EL layer formed in a region including a lower electrode layer and the auxiliary wiring is physically divided by the auxiliary wiring. An upper electrode layer formed in a manner similar to that of the lower electrode layer may be electrically connected to at least part of a side surface of the auxiliary wiring. Such an auxiliary wiring may be used in a lighting device and a display device.

Light-emitting device and manufacturing method thereof, lighting device, and display device

A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.

Oxide semiconductor device and manufacturing method therof

According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

Display device and method for manufacturing the same

A wiring which is formed using a conductive film containing copper and whose shape is controlled is provided. A transistor including an electrode which is formed in the same layer as the wiring is provided. Further, a semiconductor device including the transistor and the wiring is provided. A resist mask is formed over a second conductive film stacked over a first conductive film; part of the second conductive film and part of the first conductive film are removed with use of the resist mask as a mask so that the first conductive film has a taper angle greater than or equal to 15&#xb0; and less than or equal to 45&#xb0;; and the resist mask is removed. The first conductive film contains copper.

Method for forming wiring, semiconductor device, and method for manufacturing semiconductor device

It is an object to provide a method for manufacturing a semiconductor device that has a semiconductor element including a film in which mixing impurities is suppressed. It is another object to provide a method for manufacturing a semiconductor device with high yield. In a method for manufacturing a semiconductor device in which an insulating film is formed in contact with a semiconductor layer provided over a substrate having an insulating surface with use of a plasma CVD apparatus, after an inner wall of a reaction chamber of the plasma CVD apparatus is coated with a film that does not include an impurity to the insulating film, a substrate is introduced in the reaction chamber, and the insulating film is deposited over the substrate. As a result, an insulating film in which the amount of impurities is reduced can be formed.

Method for manufacturing semiconductor device using a microwave plasma CVD apparatus

A conductive film containing aluminum or an aluminum alloy with a thickness equal to or greater than 1 &#x3bc;m and equal to or less than 10 &#x3bc;m is etched by wet-etching to be a predetermined thickness, and then etched by dry-etching, whereby side-etching of the conductive film can be suppressed and thickness reduction of a mask can be suppressed. The suppression of side-etching of the conductive film and the suppression of thickness reduction of the mask enable a conductive film containing aluminum or an aluminum alloy even with a large thickness equal to or greater than 1 &#x3bc;m and equal to or less than 10 &#x3bc;m to be etched such that the gradient of the edge portion of the conductive film can be steep, a predetermined thickness of the conductive film can be obtained, and shape difference from a mask pattern can be suppressed.

Manufacturing method of semiconductor device

In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

Semiconductor device and method of fabricating the same

There is provided a semiconductor device having TFTs whose thresholds can be controlled. There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor active layer a second gate insulation film and a gate electrode, which are formed on a substrate, wherein an arbitrary voltage is applied to the back gate electrode.

Display device

Growing community of inventors

Tochigi, Japan

Naoya Sakamoto