Shinko Electric Industries Co., Ltd.

Naoya Sakai

Tetsuichiro Kasahara

Masayuki Okushi

Tatsuya Inatsugu

Hideki Matsuzawa

Mitsuharu Sato

Shin Ekimoto

Hideki Kobayashi

A lead frame includes: a resin portion including an upper surface and a lower surface opposite to the upper surface; and a first terminal formed to penetrate the resin portion. The first terminal includes: a first upper terminal portion disposed to protrude from the upper surface; a first lower terminal portion disposed on the first upper terminal portion to protrude from the lower surface; a first through hole formed in one of the first upper terminal portion and the first lower terminal portion; a first recess defined by an inner wall surface of the first through hole and a surface of the other of the first upper terminal portion and the first lower terminal portion; and a first metal layer formed on an inner surface of the first recess.

Lead frame and electronic component device

A lead frame includes a first lead frame including a first lead; a second lead frame including a second lead, the second lead frame being stacked on the first lead frame so that a space is formed between the first lead frame and the second lead frame, and the second lead being bonded to the first lead; and a resin portion provided in the space formed between the first lead frame and the second lead frame, wherein each of the first lead and the second lead includes an embedded portion embedded in the resin portion, and a protruding portion protruded from the resin portion, and wherein the embedded portion of the first lead and the embedded portion of the second lead are bonded in the resin portion.

Lead frame and semiconductor device

A lead frame includes a dam bar and leads connected by the dam bar. Each lead includes an inner lead, which is located at one side of the dam bar, and an outer lead, which is located at the other side of the dam bar and formed integrally with the inner lead. Each inner lead includes a basal portion located at a side closer to the dam bar, a distal portion located at the opposite side of the basal portion, and an intermediate portion connecting the distal and basal portions and having a width that differs from the distal portion. A plating layer covers an upper surface and a side surface of the distal portion and at least part of a side surface of the intermediate portion. Side surfaces of the basal portion and the dam bar are entirely located outside the plating layer.

A semiconductor device includes a lead frame having terminals, a semiconductor chip electrically coupled to the terminals, and a resin part configured to encapsulate the semiconductor chip such as to expose part of the terminals, wherein a given one of the terminals includes a first lead and a second lead welded together such that an upper face of the first lead is placed against a lower face of the second lead, wherein the lower face of the second lead extends further than the upper face of the first lead toward the semiconductor chip in a longitudinal direction of the terminal, and also extends further sideways than the upper face of the first lead in a transverse direction of the terminal, and wherein an area of the lower face of the second lead is covered with the resin part, the area extending further than the upper face of the first lead.

Growing community of inventors

Nagano, Japan

Naoya Sakai