Mitsubishi Heavy Industries Thermal Systems, Ltd.

Ricoh Company, Ltd.

Sciocs Company Limited

Naoya Miyoshi

Seiji Sarayama

Masahiro Hayashi

Takashi Satoh

Chiharu Kimura

Yasushi Hasegawa

Hiroshi Nambu

Kenji Ueda

Yoshie Togano

Taichi Yoshii

Junichi Wada

Tatsuo Ishiguro

Noriyuki Matsukura

Yoshiaki Ito

Takeshi Kaneko

Yoshiyuki Kondo

Takuo Oda

Akishige Murakami

Masahiko Nagai

Nobuki Oka

Ryo Kamito

Kazuki Wajima

Norihisa Horaguchi

Hirotaka Tanimura

Wenping Wu

An a purge device that includes an air purge pipe connected to a condenser and configured to extract a mixed gas containing a refrigerant gas and air from the condenser; a separation film provided to the air purge pipe and configured to separate, by a pressure difference, air from the mixed gas extracted by the air purge pipe; an exhaust pipe configured to externally guide a gas containing air separated by the separation film; a first valve provided to the exhaust pipe; a vacuum pump provided downstream of the first valve in the exhaust pipe and configured to externally discharge a gas present inside the exhaust pipe; and a control unit, the control unit activates the vacuum pump, opens the first valve, then closes the first valve to stop permeation of air caused by a pressure difference when detecting that a predetermined amount of air has permeated the separation film.

Air purge device

This refrigeration machine comprises a compressor that compresses a refrigerant, a condenser that condenses the refrigerant which has been compressed by the compressor, an expander that expands the refrigerant which has been condensed by the condenser, a liquid film type evaporator that evaporates the refrigerant which has been expanded by the expander, and an eductor that generates flow speed difference and pressure difference in the refrigerant which has been expanded by the expander and suctions refrigerant stored in the evaporator.

Refrigeration machine

An evaporator () comprising: a casing (); a plurality of heat transfer tubes () which are immersed in a liquid refrigerant (RL) in a liquid-phase region (A) and in the interior of which a fluid having a higher temperature than that of the liquid refrigerant (RL) flows; and a demister () which is provided so as to cover from above the liquid surface (Ls) of the liquid refrigerant (RL) accommodated in the liquid-phase region (A), and which traps liquid droplets contained in evaporated gas refrigerant (RG). The demister () comprises inclined sections () which, when viewed in a cross section intersecting the axial line (O) of the heat transfer tubes (), separate from the liquid surface (Ls) toward the center portion of the casing () along the liquid surface (Ls).

Evaporator and refrigeration system

An evaporator includes: a vessel having a refrigerant inlet for receiving a refrigerant at a lower part of the vessel, and a refrigerant outlet for discharging the refrigerant in an evaporated state at an upper part of the vessel; and a plurality of heat-transfer tubes disposed so as to extend inside the vessel along a longitudinal direction of the vessel, and configured to transfer heat received from a fluid flowing inside the heat-transfer tubes to the refrigerant flowing outside the heat-transfer tubes. The plurality of heat-transfer tubes are disposed so that at least one downward flow passage is defined through the plurality of heat-transfer tubes or around the plurality of heat-transfer tubes, the at least one downward flow passage having a width larger than a representative interval between the plurality of heat-transfer tubes. A representative interval between the plurality of heat-transfer tubes disposed on an upper side among the plurality of heat-transfer tubes is larger than a representative interval between the plurality of heat-transfer tubes disposed on a lower side among the plurality of heat-transfer tubes.

Evaporator and refrigerator

A purging device that includes a purging pipe for purging a gas mixture containing a coolant and a non-condensable gas from a chiller; a purging tank; a cooling device that has a cooling heat-transfer surface provided therein which condenses the coolant in the gas mixture and is oriented in the height direction inside the purging tank; a drainage pipe for discharging the liquid coolant inside the purging tank to the chiller; an exhaust; a purging tank pressure sensor for measuring the pressure inside the purging tank; and a control device which detects that an increase in the level of the liquid coolant inside the purging tank has occurred when the measured value from the purging tank pressure sensor decreases, and thereafter, increases to a prescribed value or higher, when condensing the coolant by cooling the interior of the purging tank using the cooling device.

Purging device, chiller equipped with same, and method for controlling purging device

In a method for manufacturing a group 13 nitride crystal, a seed crystal made of a group 13 nitride crystal is arranged in a mixed melt containing an alkali metal and a group 13 element, and nitrogen is supplied to the mixed melt to grow the group 13 nitride crystal on a principal plane of the seed crystal. The seed crystal is manufactured by vapor phase epitaxy. At least a part of contact members coming into contact with the mixed melt in a reaction vessel accommodating the mixed melt is made of AlO. An interface layer having a photoluminescence emission peak whose wavelength is longer than the wavelength of a photoluminescence emission peak of the grown group 13 nitride crystal is formed between the seed crystal and the grown group nitride crystal.

Method for manufacturing group 13 nitride crystal and group 13 nitride crystal

This refrigerating machine is equipped with: a turbocompressor which compresses a refrigerant; a condenser which is equipped with one or more pipe groups configured from a plurality of heat transfer pipes through which cooling water flows, and condenses the refrigerant compressed by the turbocompressor; an expansion valve which causes the refrigerant condensed by the condenser to expand; an evaporator which causes the refrigerant expanded by the expansion valve to evaporate; a temperature sensor which detects cooling water exit temperature, which is the temperature of the cooling water flowing from at least one of the heat transfer pipes constituting the pipe group(s); and a control unit which determines, on the basis of the detection temperature of the temperature sensor, air bleeding start conditions for starting an air bleeding operation to bleed and discharge air to the outside.

Refrigerating machine and control method therefor

The purpose of the present invention is to install an economizer having a sufficient internal volume in a compact turbo refrigeration apparatus specifically using a low-pressure refrigerant, and reduce refrigerant pressure loss and enhance efficiency in the turbo refrigeration apparatus. The turbo refrigeration apparatus according to the present invention comprises: a turbo compressor which compresses a refrigerant; a condenser which condenses the compressed refrigerant; a control valve which causes the condensed refrigerant to expand; an evaporator which causes the expanded refrigerant to evaporate; and an economizer which is installed in such a manner as to be sandwiched between the condenser and the evaporator, and separates the refrigerant expanded by the control valve into gas and liquid. The economizer is installed adjacent to a curved wall, having a drum shell shape, of the condenser and/or the evaporator, the curved wall being shared with the structural wall of the economizer. The economizer has a height (H) greater than the maximum width (W) thereof when viewed in the longitudinal direction thereof.

Turbo refrigeration apparatus

A centrifugal chiller in which a closed-cycle refrigeration cycle is formed by connecting a compressor, a condenser, an economizer and decompression means forming a multi-stage compression cycle, and an evaporator, with the refrigeration cycle being charged with a low-pressure refrigerant. The condenser and the economizer are integrated with each other by having a portion of their vessel walls form a shared wall, with the base surface of the economizer being positioned below the base surface of the condenser and above the base surface of the evaporator.

Centrifugal chiller

This turbo chiller includes a shell-and-tube condenser; a header along a length direction of a shell is installed on a refrigerant inlet of the condenser, and openings are formed at least on both end portions of the header in the length direction, which allows high-temperature and high-pressure refrigerant gas from a compressor to be smoothly and evenly distributed to both length-direction end areas in the shell of the condenser through the header.

Turbo chiller

A method for producing a gallium nitride crystal includes growing a gallium nitride crystalby dissolving nitrogen in a mixed melt including gallium and sodium, and collecting the galliumseparated from an alloyincluding the gallium and the sodium by reacting the alloyand a liquidthat ionizes the sodium and separating sodium ions and the galliumfrom the alloy.

Method for producing gallium nitride crystal

A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.

Gallium nitride crystal, group 13 nitride crystal, group 13 nitride crystal substrate, and manufacturing method

A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region.

Group 13 nitride crystal and group 13 nitride crystal substrate

A method of manufacturing a group 13 nitride crystal includes a crystal growth process to form the group 13 nitride crystal by growing the group 13 nitride crystal having a hexagonal crystal structure from a seed crystal which is a gallium nitride crystal having a hexagonal crystal structure in which a length 'L' in a c-axis direction is 9.7 mm or more, and a ratio L/d of the length 'L' to a crystal diameter &#x201c;d&#x201d; in a c-plane is larger than 0.813. The crystal growth process includes a process of forming an outer periphery containing a {10-10} plane and an outer periphery containing a {10-11} plane at side surfaces of the group 13 nitride crystal, and forming an outer periphery containing a {0001} plane at a bottom surface of the group 13 nitride crystal.

Manufacturing method of group 13 nitride crystal

A group 13 nitride crystal has a hexagonal crystal structure and at least contains nitrogen atom and at least a kind of metal atoms selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region located at an inner side of a cross section intersecting a c-axis, and a second region surrounding at least a part of an outer periphery of the first region, having a thickness larger than a maximum diameter of the first region, and having a carrier density higher than that of the first region.

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Tokyo, Japan

Naoya Miyoshi