Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Naoya Miyashita

Tomoshi Taniyama

Koei Kuribayashi

Kazuhide Asai

Akihiko Yoneda

Tadashi Okazaki

Akihito Watanabe

Katsumi Takashima

Tetsuyuki Maeda

Shigeru Honda

Nobuyuki Miyakawa

Hideo Yanase

There is provided a technique that includes: removing a deposit adhering to an inside of a process container by supplying a cleaning gas into the process container after performing a process of forming a film on a substrate in the process container, wherein the act of removing the deposit includes sequentially and repeatedly performing: a first process of supplying the cleaning gas into the process container until a predetermined first pressure is reached in the process container; a second process of stopping the supply of the cleaning gas and exhausting the cleaning gas and a reaction product generated by the cleaning gas remaining in the process container; and a third process of cooling an exhaust pipe that connects the process container and a vacuum pump, while maintaining a pressure inside the process container at a second pressure, which is lower than the first pressure, or lower.

Cleaning method, method of manufacturing semiconductor device, and substrate processing apparatus

Described herein is a technique capable of substantially cancelling out a machine difference of a pressure control valve. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a sensor detecting a valve opening degree; a first control circuit outputting a valve opening degree control signal based on a valve opening degree value detected by the sensor and a deviation between a pressure of the process chamber and a target vacuum pressure value; a second control circuit outputting an electropneumatic control signal based on the valve opening degree control signal; and a span adjustment circuit adjusting the first or second control circuit so that an upper limit value of the valve opening degree is set to a predetermined full opening degree less than a physically defined full opening degree.

Substrate processing apparatus and method of manufacturing semiconductor device

There is provided a technique that includes a first controller configured to acquire event data generated at a time of transferring a substrate and alarm data generated at a time of occurrence of a transfer error, a recorder configured to, while recording a transfer operation of the substrate as first image data, record the transfer operation of the substrate as second image data having a higher resolution than the first image data, a second controller configured to store the first image data in a first memory based on the event data, and store the second image data in a second memory based on the alarm data, and an operating controller configured to display at least the first image data and the second image data. The second controller displays both the first image data and the second image data on a same screen.

Substrate processing system and substrate processing apparatus

Provided is a substrate processing apparatus capable of improving the workability of measuring a temperature-flat zone in a process furnace and the reliability of a temperature-flat length of a heater. The substrate processing apparatus includes a process chamber configured to process a substrate retained in a retainer loaded therein; a temperature measuring device configured to measure an inside temperature of the process chamber; a transfer device configured to transfer the substrate at least to the retainer; and a controller configured to control the transfer device and the temperature measuring device to move the transfer device to a predetermined position before the inside temperature of the process chamber is measured and to obtain the inside temperature by the temperature measuring device while vertically moving the transfer device with the temperature measuring device attached to the transfer device when the inside temperature of the process chamber is measured.

Substrate processing apparatus, method of measuring temperature of substrate processing apparatus and non-transitory computer-readable recording medium

Growing community of inventors

Toyama, Japan

Naoya Miyashita