Shin-etsu Chemical Co., Ltd.

Naoya Inoue

Satoshi Watanabe

Keiichi Masunaga

Daisuke Domon

Ryosuke Taniguchi

Masaaki Kotake

Masaki Ohashi

Masahiro Fukushima

Kenji Funatsu

Jun Hatakeyama

Masayoshi Sagehashi

Takayuki Fujiwara

A chemically amplified resist composition contains (A) a polymer compound containing one or two or more kinds of repeating units, at least one kind of the repeating units is polymerized from a polymerizable monomer with not more than 1000 ppm of a residual oligomer in a form of dimer to hexamer. An object of the present invention is to provide: a chemically amplified resist composition capable of achieving favorable resolution, pattern profile, and line edge roughness, and simultaneously suppressing development-residue defect, which would otherwise cause mask defect; and a method for forming a resist pattern by using this composition.

Chemically amplified resist composition, photomask blank, method for forming resist pattern, and method for producing polymer compound

A negative resist composition comprising a base polymer comprising repeat units derived from a triple bond-containing maleimide compound is provided. A pattern with a high resolution and reduced edge roughness is formed therefrom.

Negative resist composition and pattern forming process

An onium salt having a partial structure of formula (A) is provided wherein Rand Rare hydrogen or a C-Chydrocarbyl group in which hydrogen may be substituted by halogen and —CH— may be replaced by —O— or —C(═O)—, both Rand Rare not hydrogen at the same time, Rand Rmay bond together to form an aliphatic ring. A chemically amplified negative resist composition comprising the onium salt as acid generator forms a pattern of good profile having a high sensitivity, improved dissolution contrast, reduced LWR and improved CDU.

Onium salt, chemically amplified negative resist composition, and pattern forming process

An onium salt containing an anion having formula (A1) and a cation having formula (A1-a), (A1-b) or (A1-c) is provided. A chemically amplified negative resist composition comprising the onium salt as acid generator forms a pattern of good profile having a high sensitivity, improved dissolution contrast, reduced LWR and improved CDU.

A chemically-amplified negative resist composition includes: (A) an acid generator containing an onium salt (s) shown by the following formula(e) (A-1) and/or (A-2); and (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2). Thus, the present invention provides: a chemically-amplified negative resist composition which provides a pattern with high sensitivity, low LWR and CDU, and favorable profile; and a resist patterning process using the composition. 

Resist composition and patterning process

A chemically-amplified negative resist composition includes: (A) a quencher containing an onium salt shown by the following formula (A-1); (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2); and (C) a photo-acid generator which generates an acid. Thus, the present invention provides: a negative resist composition which can form a favorable profile with high sensitivity and low LWR and CDU in a pattern; and a resist patterning process using the composition. 

A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process

A negative resist composition comprising an onium salt having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER. 

Onium salt, negative resist composition, and resist pattern forming process

A novel sulfonium compound has formula (A). A positive resist composition comprising a polymer and a quencher containing the sulfonium compound is improved in resolution and LER during pattern formation and has storage stability. In formula (A), R, R, R, and Rare independently a C-Cmonovalent hydrocarbon group, p is an integer of 0-5, q is an integer of 0-5, and r is an integer of 0-4. 

Sulfonium compound, positive resist composition, and resist pattern forming process

An onium salt of arenesulfonic acid having a bridged ring-containing group generates a bulky acid having an appropriate strength and controlled diffusion. When a positive resist composition comprising the onium salt and a base polymer is processed by lithography, a pattern of rectangular profile having high resolution and reduced LER is formed.

Growing community of inventors

Joetsu, Japan

Naoya Inoue