Fujifilm Corporation

Naoya Hatakeyama

Akiyoshi Goto

Yasunori Yonekuta

Michihiro Shirakawa

Kohei Higashi

Yoichi Nishida

Tsutomu Yoshimura

Keita Kato

Michio Ono

Jun Tanabe

Shohei Kataoka

Naohiro Tango

Fumihiro Yoshino

Keiyu Ou

Naoki Inoue

Takamitsu Tomiga

Provided are an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A),

Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device

A composition for forming an upper layer film is applied onto a resist film formed using an actinic ray-sensitive or radiation-sensitive resin composition, and includes a resin X and a compound A having a radical trapping group. A pattern forming method includes applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, applying the composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, exposing the resist film having the upper layer film formed thereon, and developing the exposed resist film using a developer including an organic solvent to form a pattern.

Composition for forming upper layer film, pattern forming method, resist pattern, and method for manufacturing electronic device

Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.

Pattern forming method, method for manufacturing electronic device, monomer for producing resin for semiconductor device manufacturing process, resin, method for producing resin, actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film

Provided is an electrolytic solution for a non-aqueous secondary battery containing an electrolyte, an organic solvent, and a compound represented by any of General Formulae (I) to (III) and a non-aqueous secondary battery in which the electrolytic solution for a non-aqueous secondary battery is used.  In the formulae, M represents a transition metal. R, R, and Rrepresent a specific substituent. a represents an integer of 0 to 5. b represents an integer of 0 or more. c represents an integer of 0 to 5. Arrepresents an aromatic ring. In General Formula (II), a plurality of Ar's may be linked together. Arrepresents a nitrogen-containing aromatic hetero ring.

Electrolytic solution for non-aqueous secondary battery and non-aqueous secondary battery

A method for producing an electronic device includes the pattern forming method, and an actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development. Specifically, provided is a pattern forming method, including a film forming step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of irradiating the film, and a development step of developing the film using a developer containing an organic solvent, in which the composition contains a resin containing a repeating unit having an Si atom and a repeating unit having an acid-decomposable group and a compound capable of generating an acid upon irradiation with actinic rays or radiation, the content of Si atoms in the resin is 1.0 to 30 mass %, and the content of the resin in the total solid content of the composition is 20 mass % or more.

Pattern forming method, method for producing electronic device, and actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development

A problem to be solved by the invention is to provide a production method of a nitrogen-containing carbon alloy that has sufficiently high redox activity or has a large number of reaction electrons of redox reaction. A method for producing a nitrogen-containing carbon alloy comprising baking a precursor containing a nitrogen-containing organic compound and an inorganic metal salt containing one or more kinds of Fe, Co, Ni, Mn and Cr, wherein: the precursor satisfies one of the requirements (a) and (b) below, and, the nitrogen-containing organic compound is one of a compound represented by the formula (1) below, a tautomer of the compound, and a salt and hydrate thereof: (a) the precursor contains the inorganic metal salt in an amount exceeding 45% by mass based on the total amount of the nitrogen-containing organic compound and the inorganic metal salt of the precursor, in which the total amount includes the mass of hydrated water in the nitrogen-containing organic compound and the inorganic metal salt, and the amount of the inorganic metal salt includes the mass of hydrated water in the inorganic metal, (b) the precursor further contains a &#x3b2;-diketone metal complex: 

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Haibara-gun, Japan

Naoya Hatakeyama