Disco Corporation

Kabushiki Kaisha Idx Technologies

Naotoshi Kirihara

Hiroshi Morikazu

Kentaro Odanaka

Takumi Shotokuji

Yohei Kaneko

Koji Yamaguchi

Yasuo Suzuki

Keiji Nomaru

Kenji Takahashi

Yukio Morishige

Noboru Takeda

Yusaku Ito

Ryugo Oba

Kenji Asano

Joel Koerwer

Mizuho Tanaka

Takamasa Kaneko

Yudai Hata

Norifumi Kitada

Haruaki Yoshida

A laser oscillation mechanism of a laser beam irradiation unit has a first mode to break growing debris, a second mode to suppress generation of molten debris, and a third mode to break the growing debris and suppress generation of the molten debris. The laser oscillation mechanism includes a selecting part that selects any of the first mode, the second mode, and the third mode. The laser oscillation mechanism sets a repetition frequency with a first group being one unit in the first mode, and sets a repetition frequency with a second group being one unit in the second mode, and sets a repetition frequency with a third group being one unit in the third mode.

Laser processing apparatus

A laser processing apparatus includes a laser oscillating mechanism for emitting pulsed laser beams. The laser oscillating mechanism includes a group setting section for establishing the number of pulsed laser beams to be applied to a workpiece until a time after which melted debris produced by the pulsed laser beams applied to the workpiece is solidified, and assigns the pulsed laser beams to a group, under conditions that, within a period of time which is shorter than a period of time in which the melted debris is produced, and within a period of time after which a plasma generated by the pulsed laser beam becomes extinct, a next pulsed laser beam is applied to the workpiece to sustain the plasma uninterruptedly to break growing debris, and a time interval setting section for establishing a time interval between the group and another group adjacent thereto.

Laser processing apparatus and laser processing method

There is provided a laser processing method for performing laser processing on a wafer having a functional layer on a substrate. The laser processing method includes a blackening step of emitting a pulsed laser beam of a wavelength transparent to the functional layer from a laser oscillator and blackening the functional layer by irradiating the functional layer with the pulsed laser beam of energy equal to or higher than a processing threshold value at which the functional layer is processed such that an overlap ratio of the pulsed laser beam successively applied to the functional layer is equal to or more than 90% and less than 100%, and a groove processing step of forming a laser-processed groove by irradiating the blackened functional layer with the pulsed laser beam and making the blackened functional layer absorb the pulsed laser beam, after performing the blackening step.

Laser processing method

A laser oscillator of a laser processing apparatus generates burst pulses each composed of a plurality of sub-pulses. The plurality of sub-pulses are generated in such a manner that the energy of the sub-pulse sequentially changes from a lower energy to a higher energy, and the burst pulses are applied to a wafer, whereby the wafer is formed therein with shield tunnels extending from the front surface to the back surface of the wafer and each being composed of a minute hole and an amorphous phase surrounding the minute hole.

A laser processing apparatus including a condenser having a function of spherical aberration. Since the condenser has a function of spherical aberration, the focal point of a laser beam to be focused by the condenser and applied to a wafer can be continuously changed in position along the thickness of the wafer. Accordingly, a uniform shield tunnel composed of a fine hole and an amorphous region surrounding the fine hole can be formed so as to extend from the front side of the wafer to the back side thereof, by one shot of the laser beam.

Wafer processing apparatus

A laser processing method for a wafer includes: linearly forming a plurality of shield tunnels each having a fine hole and an amorphous region surrounding the fine hole at predetermined intervals in an inner part of a test substrate, the test substrate having a material and a thickness identical to those of a substrate of the wafer to be processed, while changing time intervals of a plurality of pulses constituting a burst pulse laser beam; and measuring a rupture strength when the test substrate is ruptured along the plurality of shield tunnels. Next, the time intervals of the pulses when the rupture strength is at a minimum are calculated, and a laser processing step is performed which linearly forms a plurality of shield tunnels at predetermined intervals in an inner part of the wafer, by irradiating the wafer with the laser beam having the time intervals of the pulses.

Laser processing method for wafer

Disclosed herein is a laser processing apparatus including a condenser having a function of spherical aberration. Since the condenser has a function of spherical aberration, the focal point of a laser beam to be focused by the condenser and applied to a wafer can be continuously changed in position along the thickness of the wafer. Accordingly, a uniform shield tunnel composed of a fine hole and an amorphous region surrounding the fine hole can be formed so as to extend from, the front side of the wafer to the back side thereof, by one shot of the laser beam.

A method of processing a wafer includes applying a laser beam having a wavelength that is transmittable through a sapphire substrate to the wafer while positioning a focused spot of the beam within the wafer in regions corresponding to projected dicing lines through a reverse side of the wafer, thereby forming a plurality of shield tunnels made up of a plurality of pores and an amorphous body surrounding the pores, at predetermined spaced intervals in the wafer along the projected dicing lines. A laser beam having a wavelength that is transmittable through the sapphire substrate to the wafer is applied while positioning a focused spot of the laser beam within the wafer in the projected dicing lines through the reverse side of the wafer, thereby forming modified layers between adjacent shield tunnels. Exerting external forces to the wafer divides the wafer into a plurality of optical device chips.

Method of processing wafer

An optical device wafer processing method includes a shield tunnel forming step of applying a pulsed laser beam having a transmission wavelength to a sapphire substrate along an area corresponding to each division line from the back side of the sapphire substrate in the condition where the focal point of the pulsed laser beam is set inside the sapphire substrate, thereby forming a plurality of shield tunnels arranged along the area corresponding to each division line, each shield tunnel being composed of a fine hole and an amorphous region formed around the fine hole for shielding the fine hole. The optical device wafer processing method further includes a dividing step of applying an external force to the optical device wafer after performing a light emitting layer forming step, thereby dividing the optical device wafer along the division lines to obtain the individual optical device chips.

Optical device wafer processing method

Disclosed herein is a laser beam spot shape detection method for detecting a spot shape of a laser beam oscillated by laser beam oscillator and collected by a condenser in a laser machining apparatus, the laser beam spot shape detection method including: a concave mirror holding step of holding a concave mirror having a spherical face forming a reflecting face with a chuck table; a focal point positioning step of positioning the focal point of the condenser in a proximity including the center of the spherical face forming the reflecting face of the concave mirror held by the chuck table; a laser beam irradiation step of irradiating a laser beam onto the held concave mirror, and an imaging step of capturing images of reflected light with a camera.

Laser beam spot shape detection method

A processing method for optical device wafers includes a shielded tunnel forming step and a dividing step. In the shielded tunnel forming step, a sapphire substrate is irradiated with a pulse laser beam having such a wavelength as to be transmitted through the sapphire substrate along regions corresponding to planned dividing lines. The light focus point of the beam is positioned inside the substrate from the back surface side of the substrate. Fine pores and amorphous regions that shield the fine pores form shielded tunnels along the planned dividing lines. In the dividing step, an external force is applied to the optical device wafer, and the optical device wafer is divided into individual optical device chips along the planned dividing lines. In the shielded tunnel forming step, a spherical aberration is generated by causing the laser beam to be incident on a condensing lens with a divergence angle.

Processing method of optical device wafer

A divider which divides a wafer having a division start points formed along the scheduled divisions into a plurality of device chips. The divider includes a placement table on which a wafer is placed, and division unit adapted to divide the wafer on the placement table into a plurality of device chips starting from the division start points. The placement table includes: a plurality of spherical bodies having the same diameter; a container that accommodates the plurality of spherical bodies in close contact with each other; and a placement surface formed by connecting vertices of spherical surfaces of the plurality of spherical bodies that are accommodated in close contact with each other.

Wafer divider and wafer division method

In a wafer dividing method of dividing a wafer into individual devices, the wafer being sectioned by streets to form the devices each made of a laminated body in which an insulating film and a function film are laminated on a front surface of a semiconductor substrate, the method includes a laser processing groove forming step for forming a laser processing groove on the laminated body so as to reach the semiconductor substrate by applying a laser beam formed with an annular spot to the laminated body side of the wafer along the street, the annular spot having an outer diameter larger than a width of a cutting blade and smaller than a width of the street; and a cutting step for allowing a cutting blade to cut the semiconductor substrate of the semiconductor wafer along the laser processing groove formed at the street.

Wafer dividing method using laser beam with an annular spot

The invention provides an ultra-sonic jet multi-photon resonance ionization type mass analyzing device. The laser beam ionization mass analyzing device includes a pulsed gas ejecting devicefor ejecting in pulse mode carrier gas containing sample molecules into a vacuum vessel, a laser beam irradiation system for irradiating laser beam for selective photo-reaction of sample molecules in said pulsed gas, repeller and extraction electrodesandgenerating an electric field for extraction of sample molecular ions generated by the photo reaction and a mass analyzing devicefor mass analysis of extracted sample molecular ions. The laser beam irradiation system is set to irradiate laser beam to sample molecules near a position whereat a pressure time distribution of pulsed gas translating in the vacuum vesseltransitions from a flat-top pressure distribution to a triangular pressure distribution.

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Tokyo, Japan

Naotoshi Kirihara