Semiconductor Energy Laboratory Co., Ltd.

Naoto Yamade

Shunpei Yamazaki

Junichi Koezuka

Yutaka Okazaki

Toshihiko Takeuchi

Yuhei Sato

Akihisa Shimomura

Tetsuhiro Tanaka

Hiroshi Fujiki

Kosei Nei

Miki Suzuki

Tomoya Takeshita

Shinya Sasagawa

Tomoaki Moriwaka

Takashi Hamada

Sachiaki Tezuka

Shunsuke Kimura

Hidekazu Miyairi

Osamu Nakamura

Daisuke Matsubayashi

Motomu Kurata

Yuichi Sato

Yoshiaki Yamamoto

Katsuaki Tochibayashi

Ryota Hodo

Masaharu Nagai

Yoshinori Ieda

Daigo Ito

Yoshinori Ando

Kentaro Sugaya

Yasutaka Suzuki

Asako Higa

Aki Yamamiti

Yasumasa Yamane

Naoki Okuno

Hiroaki Honda

Suguru Hondo

Hideomi Suzawa

Masayuki Sakakura

Atsuo Isobe

Yoshitaka Yamamoto

Tsutomu Murakawa

Takehisa Hatano

Hiroki Komagata

Mari Terashima

Kyoko Yoshioka

Hiromachi Godo

The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.

Semiconductor device

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Integrated semiconductor with shared electrodes between capacitor and transistor

A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.

Oxide semiconductor transistor

To provide a semiconductor device with less variations, a first insulator is deposited; a stack of first and a second oxides and a first conductor is formed over the first insulator; a second insulator is formed over the first insulator and the stack; an opening is formed in the second insulator; a top surface of the second oxide is exposed by removing a region of the first conductor, second and third conductors are formed over the second oxide, and then cleaning treatment is performed; a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide; heat treatment is performed on an interface between the second oxide and the first oxide film through the first oxide film; and the second insulator is exposed and a fourth conductor, a third insulator, and a third oxide are formed in the opening.

Method for manufacturing semiconductor device

Semiconductor device and method for manufacturing semiconductor device

A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.

Semiconductor device and method for manufacturing the same

Growing community of inventors

Kanagawa, Japan

Naoto Yamade