National Institute for Materials Science

Naoto Umezawa

Toshihide Nabatame

Toyohiro Chikyo

To provide a method for reducing a thickness of an interfacial layer, which contains: (a) forming a film of an oxide of a first metal on a semiconductor layer via an oxide film of a semiconductor serving as an interfacial layer; and (b) forming a film of an oxide of a second metal on the film of the oxide of the first metal, where the second metal has higher valency than that of the first metal.

Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide film

To provide a method for reducing a thickness of an interfacial layer, which contains: (a) forming a film of an oxide of a first metal on a semiconductor layer via an oxide film of a semiconducdor serving as an interfacial layer; and (b) forming a film of an oxide of a second metal on the film of the oxide of the first metal, where the second metal has higher valency than that of the first metal.

Growing community of inventors

Ibaraki, Japan

Naoto Umezawa