Asm IP Holding B.v.

Asm Japan K.k.

Asm IP Holdings B.v.

Naoto Tsuji

Takayuki Yamagishi

Kazuo Sato

Satoshi Takahashi

Yukihiro Mori

Atsuki Fukazawa

Kiyohiro Matsushita

Nobuo Matsuki

Noboru Takamure

Yozo Ikedo

Suvi P Haukka

Masaki Hirayama

Antti Niskanen

Hideaki Fukuda

Masami Suzuki

Michael A Todd

Ryu Nakano

Herbert Terhorst

Shingo Ikeda

Lucian C Jdira

Yoshinori Morisada

Hiroki Arai

Hyung Sang Park

Yoshio Susa

Menso Hendriks

Manabu Kato

Fumitaka Shoji

Makoto Igarashi

Ippei Yanagisawa

Tamihiro Kobayashi

Fumitoshi Ozaki

Vincent Hubert Bernard Gilles Babin

Takuya Suguri

Tominori Yoshida

Miho Shimotori

Shuzo Hebiguchi

Ryo Kawaguchi

Nathan Kameling

A gas distribution assembly and methods for adjusting the gas flow through a gas supply unit into a reaction chamber are disclosed. The gas distribution assembly and methods can be used to increase or decrease gas flow uniformly through the gas supply unit. The gas distribution assembly and methods can also be used to increase gas flow into one area of the reaction chamber, while decreasing gas flow into another area.

Gas distribution assembly

Examples of a substrate processing device include an annular distribution ring, a plurality of connection plates continued to the distribution ring and having non-uniform impedances, a shower plate electrically connected to the plurality of connection plates, and a stage provided below the shower plate so as to face the shower plate.

Substrate processing device having connection plates, substrate processing method

A substrate processing apparatus includes a chamber, a manifold including a tubular portion above the chamber, first and second introduction pipes provided on a side surface of the tubular portion, and a gas guide portion to guide, in a direction opposite the chamber, gases introduced from the first and second introduction pipes into the tubular portion, and then introduce the gases into the chamber. The gas guide portion does not contact a top of the manifold, and the manifold includes a space above the gas guide portion to allow the gases to flow from between the gas guide portion and the tubular portion into a space surrounded by the gas guide portion. The gas guide portion advantageously enables the gases to broadly diffuse and uniformly mix, increasing the quality of a film formed on a substrate inside the chamber.

Substrate processing apparatus having a gas-mixing manifold

An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a first chamber configured for holding a source chemical with a first fill level; and a second chamber configured for holding the source chemical with a second fill level and in fluid communication with the first chamber via a fluid channel below the first and second fill levels. The apparatus may also include: a second chamber inlet opening in fluid communication with a pressurizing gas feed provided with a flow controller configured for controlling a flow of a pressurizing gas in the second chamber to control the first fill level in the first chamber. Methods for dispensing a vapor phase reactant are also provided.

Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods

A substrate treatment apparatus includes a lower electrode, an upper electrode, a first AC power supply that is connected to the upper electrode and supplies AC power at a first frequency, a second AC power supply that is connected to the upper electrode and supplies AC power at a second frequency which is lower than the first frequency, an internal electrode provided in the lower electrode, a filter circuit connected to the internal electrode, and a DC power supply connected to the internal electrode via the filter circuit. The filter circuit includes a first filter circuit that becomes low impedance with respect to AC power at the first frequency compared to AC power at the second frequency, and a second filter circuit that becomes low impedance with respect to AC power at the second frequency compared to AC power at the first frequency.

Substrate treatment apparatus

A semiconductor manufacturing apparatus includes a stage, and an exhaust duct having an annular passage surrounding a processing space over the stage, an annular slit through which a gas supplied to the processing space is led into the annular passage, and an exhaust port through which the gas in the annular passage is discharged to the outside, wherein the opening-area percentage of the slit is increased with increase in distance from the exhaust port.

Semiconductor manufacturing apparatus

A film forming apparatus includes a susceptor, and a shower head provided above the susceptor and having a first passage and a second passage independent of the first passage formed therein, wherein the first passage is formed through the shower head by being provided with a first cavity surrounded by a first upper wall and a first lower wall, a first thin hole formed in the first upper wall, and a plurality of second thin holes formed in the first lower wall, the height of the first upper wall in the vertical direction is reduced with increase in distance from the first thin hole, and the second passage is formed in the same manner as the first passage.

Film forming apparatus

An anti-slip end-effector for transporting a workpiece, which is configured to be attached to a robotic arm, includes: a workpiece-supporting area for placing a workpiece thereon for transportation; at least one front protrusion disposed at a distal end of the workpiece-supporting area for engaging an edge of the workpiece to restrict movement of the workpiece placed on the workpiece-supporting area beyond the front protrusion; and at least one anti-slip protrusion disposed in the workpiece-supporting area for contacting and supporting the backside of the workpiece, said anti-slip protrusion having a top face having a static friction coefficient of 1.0 or more as measured against the backside of the workpiece, and having a surface roughness of less than 0.4 &#x3bc;m.

Anti-slip end-effector for transporting workpiece

Top plate

Seal ring

Shower plate

Growing community of inventors

Tama, Japan

Naoto Tsuji