Shin-Etsu Handotai Co., Ltd.

Seh America, Inc.

Shin-Etsu Handotai, Ltd.

Shin-Estu Handotai Co., Ltd.

Naoto Tate

Hitoshi Habuka

Masatake Katayama

Masanori Mayuzumi

Tomoyuki Sakai

Hitoshi Tsunoda

Naohisa Toda

Eva Brown

Michito Sato

A method of performing chemical vapor deposition which produces semiconductor crystalline thin films having small transition widths. The method involves the use of a cold-wall type reaction chamber that is equipped with a gas inlet at one end and a gas outlet at the other end and a semiconductor substrate support which supports a semiconductor substrate so that a main surface thereof is horizontal. A reactant gas is caused to flow horizontally through the reaction chamber to effect the growing of a crystalline thin film on the main surface of the semiconductor substrate. The semiconductor substrate is arranged within the reactor chamber within a distance W which is measured from a leading edge of the semiconductor substrate at a most upstream position along a direction toward the gas outlet where W indicates an internal width of the reaction chamber. The semiconductor substrate is also in a location having a W/G ratio of 15 or greater, where G represents a distance between the main surface of the semiconductor substrate and a ceiling of the reaction chamber.

Method of chemical vapor deposition

Heat-treating method and radiant heating device

In a method and an appratus for a thin film growth on a semiconductor crystal substrate, impurities and contaminants absorbed on the inside wall of the reaction vessel are very harmful because these impurities and contaminants will deteriorate the quality of the thin film. A method and an apparatus by which the quantity of these impurities and contaminants absorbed on the inside wall of the reaction vessel can be restrained and removed easily are disclosed in this invention, wherein a semiconductor crystal substrate is mounted in the reaction vessel, and the wall of the reation vessel is cooled forcibly by a coolant while the substrate is under heating procedure to grow a thin film on the substrate by supplying the raw material gas into the reaction vessel. And the temperature of the wall of the reaction vessel during the procedure except the thin film growth is kept higher temperature than the temprature of the wall of the reaction vessel during the thin film growth procedure.

Method and apparatus for thin film growth

In the formation of a thin film on the surface of a semiconductor crystal substrate by using a horizontal type vapor phase growth apparatus, the distribution of the thickness and resistivity of the thin film can be properly obtained by adjusting the concentration distribution of the raw material gas in the mixture gas in the width direction of the reaction vessel over the substrate surface. And in the reaction vessel, carrier gas is supplied from the position close to the transfer port of the substrate, and raw material gas is supplied from the position located in the downstream side of a vortex generation region caused by the flow of the carrier gas.

Method for vapor phase growth

A method of measuring and monitoring the back side and interior defect density of a wafer from its back side by substantially increasing the back side reflectivity through lapping, etching and controlled back side damage, then measuring defect density with an optical scanner.

Back side damage monitoring system

A reactor for chemical vapor deposition which is capable of producing semiconductor crystalline thin films having small transition widths. The reactor includes a cold-wall type reaction chamber that is equipped with a gas inlet at one end and a gas outlet at the other end and a semiconductor substrate support which supports a semiconductor substrate so that a main surface thereof is horizontal. A reactant gas is caused to flow horizontally through the reaction chamber to effect the growing of a crystalline thin film on the main surface of the semiconductor substrate. The semiconductor substrate is arranged within the reactor chamber within a distance W which is measured from a leading edge of the semiconductor substrate at a most upstream position along a direction toward the gas outlet where W indicates an internal width of the reaction chamber. The semiconductor substrate is also in a location having a W/G ratio of 15 or greater, where G represents a distance between the main surface of the semiconductor substrate and a ceiling of the reaction chamber.

Method of chemical vapor deposition and reactor therefor

A method for vapor-phase growth which allows an epiwafer of a smooth surface free from microroughness to be produced is provided. This method comprises a step of heating up a silicon single crystal substrate in an ambience of an inert gas started at a temperature of less than 800.degree. C. and a step of removing a native oxide film formed on the surface of the silicon single crystal substrate by etching with hydrogen gas in an ambience of hydrogen gas at a temperature of not less than 950.degree. C. and not more than 1190.degree. C. prior to the vapor-phase growth.

Growing community of inventors

Camas, WA, United States of America

Naoto Tate