Shoei Chemical Inc.

Kyocera Corporation

Sec Corporation

Heraeus Precious Metals North American Conshohocken LLC

Heraeus Precious Metals North America Conshohocken LLC

Naoto Shindo

Tadashi Kanasaku

Kousuke Nishimura

Masami Nakamura

Yuji Akimoto

Hiroshi Mashima

Mineto Iwasaki

Hiroshi Yoshida

Fumiyuki Shimizu

Masayuki Kurahashi

Junichi Atobe

Kosuke Nishimura

Nobuo Nishioka

Shoko Masuda

Kenji Morinaga

The present invention provides a silver paste containing at least a silver powder, a binder resin, and an organic solvent, in which a value C/Sis 2.0 to 3.4 where S(m/g) represents a specific surface area of the silver powder, and C(% by mass) represents a content percentage of the binder resin based on the silver powder, a copper content of the silver powder is 10 to 5000 ppm by mass, and the silver paste has a dry film density of 7.50 g/cmor more. The present invention can provide a silver paste containing a powder in a high concentration and excellent in printability, and accordingly provide a silver conductor film that has a high filling factor and a high film density, exhibits high electrical conductivity, and is excellent in migration resistance.

Silver paste

The present invention provides a silver paste, containing at least a silver powder, a binder resin, and an organic solvent, in which a content of the silver powder based on the silver paste is 80.00 to 97.00% by mass, D10 is 1.00 to 3.00 μm and D50 is 3.00 to 7.00 μm, where D10 and D50 respectively represent a 10% value and a 50% value of a volume-based cumulative fraction obtained by laser diffraction particle size distribution measurement of the silver powder, the silver powder has a specific surface area of 0.10 to 0.30 m/g, the silver powder has a copper content of 10 to 5000 ppm by mass, a content of the binder resin based on the silver powder is 0.430 to 0.750% by mass, and the silver paste has a dry film density of 7.50 g/cmor more.

The present invention provides a silver paste containing at least a silver powder, a binder resin, and an organic solvent, wherein the silver powder contains a first silver powder having a D50 of 3.50 to 7.50 &#x3bc;m and a second silver powder having a D50 of 0.80 to 2.00 &#x3bc;m, where D50 represents a 50% value of a volume-based cumulative fraction obtained by laser diffraction particle size distribution measurement; a copper content of the whole silver powder is 10 to 5000 ppm by mass; a copper content of the second silver powder is 80 ppm by mass or more; and the first silver powder contains substantially no copper. The present invention provides a silver paste containing a powder in a high concentration and excellent in printability, and provides a silver conductor film that has a high filling factor, a high film density, high electrical conductivity, and excellent migration resistance.

Provided is a conductive paste for forming a solar cell electrode containing a glass frit component (A) as glass frit (II), the glass frit component (A) containing the following in the content ratio to the total molar number in terms of oxide: (a) 30 to 70 mol % of tellurium element, (b) 18 to 30 mol % of tungsten element, (c) 5 to 30 mol % of zinc element, (d) 1 to 15 mol % of boron element, (e) 0.3 to 5 mol % of aluminum element, The conductive paste may have better electric characteristics and a small variation in the characteristics even at a relatively low firing temperature (for example, 760&#xb0; C.).

Conductive paste for forming solar cell electrode

A conductive paste including a conductive powder, a glass frit, and an organic vehicle, wherein the conductive powder includes copper and/or nickel as a main component(s), and the glass frit is substantially free of Pb, Cd, and Bi, comprises 40 to 65% by mass of BaO, 15 to 23% by mass of B2O3, 2 to 12% by mass of Al2O3, 4 to 8% by mass of SiO2, 0 to 5% by mass of ZnO, 0.5 to 7% by mass of TiO2, 3 to 7.5% by mass of CaO, and comprises any one or more of MnO2, CuO, and CoO in the ranges of 0 to 7% by mass of MnO2, 0 to 16% by mass of CuO, and 0 to 5% by mass of CoO, in terms of oxide.

Conductive paste and method for forming terminal electrodes of multilayer ceramic component

A conductive paste for forming a solar cell electrode, including: a conductive powder containing silver as a main component; glass frit; and an organic vehicle, wherein the glass frit contains tellurium glass frit having tellurium oxide as a network-forming component. The conductive paste of the present invention makes it possible to form a solar cell electrode having a low dependence on firing temperature without causing problems due to fire-through into the substrate, and to thereby obtain a solar cell having good solar cell characteristics.

Method for forming a solar cell electrode with conductive paste

A solar cell element containing: a semiconductor substrate; an antireflection film disposed in a first region on one main surface of the semiconductor substrate; and a front surface electrode disposed in a second region on the one main surface of the semiconductor substrate and containing silver as a main component and a tellurium-based glass containing tellurium, tungsten, and bismuth. The solar cell element is manufactured by forming the antireflection film on the one main substrate surface; printing on the antireflection film a conductive paste containing a conductive powder mainly containing silver, a tellurium-based glass frit containing tellurium, tungsten, and bismuth, and an organic vehicle; and disposing the antireflection film in the first region and forming the front surface electrode in the second region, by firing the paste and eliminating the antireflection film positioned under the paste.

Solar cell element and method for manufacturing same

A conductive paste includes a conductive powder containing at least one of copper and nickel as a main component, a glass frit, and an organic vehicle, wherein the glass frit is a tellurium-based glass frit that essentially does not contain any lead component and contains tellurium as a network former in an amount of 35 to 70 mol % in terms of oxide, the tellurium-based glass frit containing silver as an essential component. The above conductive paste can provide favorable characteristics and favorably be used in the formation of light-receiving surface electrodes of a solar cell element even when the conductive paste includes one or more of copper and nickel as its conductive component.

Conductive paste

A solar cell device including an electrode formed by applying a conductive paste containing at least a conductive powder, glass frit and an organic vehicle onto a semiconductor substrate provided with a silicon nitride layer on a surface thereof and firing the applied conductive paste, wherein the electrode has a structure with a front electrode layer containing silver as a main component, a glass layer containing tellurium glass as a main component, and a silicon oxide layer containing plural silver particles precipitated by the firing. The solar cell device is provided with an electrode formed using a conductive paste not containing lead glass and has good solar cell characteristics.

Solar cell device and manufacturing method therefor

Conductive paste for forming a solar cell electrode

A crystallized glass for a substrate of an information-recording disk, which has been obtained by melting a glass forming material consisting essentially of, in wt. % as oxide, 55 to 85% of SiO.sub.2, 5 to 20% of Li.sub.2 O, 0 to 10% of K.sub.2 O+Na.sub.2 O, 0 to 10% of MgO, 0 to 20% of CaO, 0 to 10% of SrO, 0 to 10% of BaO, 0 to 10% of ZnO, 0 to 10% of Al.sub.2 O.sub.3, 0 to 15% of B.sub.2 O.sub.3, 0 to 6% of P.sub.2 O.sub.5, 0 to 3% of TiO.sub.2, 0 to 3% of ZrO.sub.2, 0 to 3% of SnO.sub.2 and 0 to 1% of As.sub.2 O.sub.3 +Sb.sub.2 O.sub.3, 0.1 to 10 wt. % of F and 0.1 to 20 wt. % of Cl, molding, vitrifying and crystallizing the material, and which contains at least 0.05% by weight of chlorine after crystallization. The glass forming material may further contain 0 to 10% of Fe.sub.2 O.sub.3, 0 to 10% of Cr.sub.2 O.sub.3, 0 to 10% of NiO, 0 to 10% of V.sub.2 O.sub.5, 0 to 10% of CuO, 0 to 10% of MnO.sub.2, 0 to 10% of MoO.sub.3, the total of Fe.sub.2 O.sub.3 +Cr.sub.2 O.sub.3 +NiO+V.sub.2 O.sub.5 +CuO+MnO.sub.2 +MoO.sub.3 being 0.5 to 10%, and 0 to 3% of CeO.sub.2. The crystallized glass has a microcrystalline structure and surface properties desirable as a substrate material for an information-recording disk as well as excellent meltability and moldability.

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Ome, Japan

Naoto Shindo