Sumitomo Electric Industries, Limited

Nissin Electric Co., Ltd.

Nippon Itf, Inc

Naoto Okazaki

Masanori Nishiguchi

Haruyo Fukui

Hideki Moriguchi

Makoto Setoyama

Kiyoshi Ogata

Yoshiharu Utsumi

Hisanori Ohara

Miki Irie

Satoshi Ohtani

Satoru Kukino

Akihiko Ikegaya

Keiichi Tsuda

Masahiko Aoki

Yasuhiro Matsuda

Tomoyasu Matsuno

Masashi Konishi

Shinji Narahara

Ken Yoshihara

Hiroshi Ishizuka

Provided is an arc evaporation source for melting and evaporating a cathode material by arc discharge for film formation on a surface of a substrate, and including a cathode formed in a substantially disc shape and a magnetic field generating apparatus, disposed at a back side of the cathode. The magnetic field generating apparatus generates a magnetic field which forms magnetic lines that form an acute angle with respect to a substrate direction at an outer circumferential surface of the cathode, magnetic lines that are substantially perpendicular to the discharge surface at an outermost circumference part of the discharge surface of the cathode, and magnetic lines that form an acute angle with respect to a center direction of the cathode at a region towards the outer circumferential surface of the discharge surface of the cathode, by at least one permanent magnet disposed at the back side of the cathode.

Arc evaporation source

Amorphous carbon coated tools include substrates formed from a cubic boron nitride sintered body, a diamond sintered body, a silicon nitride sintered body, or an aluminum oxide-titanium carbide sintered body, and amorphous carbon films thereon to make the cutting edges of the tools. The amorphous carbon films contain hydrogen at 5 atomic percent or below and have a maximum thickness of 0.05 &#x3bc;m to 0.5 &#x3bc;m on the cutting edges. The amorphous carbon films are most suitable for applications to cutting tools exemplified by cutters, knives, and slitters, and to indexable inserts used for example in turning tools including drills, endmills, and reamers, and milling cutters.

Amorphous carbon coated tools and method of producing the same

An amorphous carbon coated tool includes a base material of WC base cemented carbide, and an amorphous carbon film formed on this base material. The cobalt content in the base material is at least 12% by mass. The maximum thickness of the amorphous carbon film is at least 0.05 &#x3bc;m and not more than 0.5 &#x3bc;m at the cutting edge. The amorphous carbon film is deposited with graphite as the source material by physical vapor deposition in an atmosphere substantially absent of hydrogen. The amorphous carbon film coated tool superior in wear resistance and adhesion resistance is preferably applicable to rotating tools such as drills, end mills and reamers, indexable inserts used for milling cutters and turning tools, and cutting-off tools such as cutters, knives, or slitters.

Amorphous carbon coated tool and fabrication method thereof

This invention is for improving the radiation hardness or radiation resistance of GaAs MESFETs. According to this invention, an n-type active layer is formed by doping in the GaAs crystal. The n-type active layer includes an upper layer and a heavy doped lower layer. A Schottky gate electrode is provided on the active layer so that the carrier concentration in the active layer and the thickness of the active layer are set to required values. According to this invention, not only in the case of a total dose of exposure radiation of R=1.times.10.sup.9 roentgens but also in the case of a higher total dose, at least one of the threshold voltage V.sub.th of the GaAs MESFET, the saturated drain current I.sub.dss there of, or the transconductance g.sub.m will remain in their tolerable ranges. Consequently a semiconductor device comprising the GaAs MESFET and a signal processing circuit cooperatively combined therewith can operate normally as initially designed, with the result of conspicuously improved radiation hardness.

Semiconductor device MESFET with upper and lower layers

This invention is for improving the radiation hardness or radiation resistance of GaAs MESFETs. According to this invention, an n-type active layer is formed by doping GaAs crystal evenly in the depth direction of the GaAs crystal, and a Schottky gate electrode is provided on the active layer, so that the carrier concentration in the active layer and the thickness of the active layer are set to required values. According to this invention, not only in the case of a total dose of exposure radiation of R=1.times.10.sup.9 roentgens but also in the case of a higher total dose, at least one of the threshold voltage V.sub.th of the GaAs MESFET, the saturated drain current I.sub.dss thereof, and the transconductance g.sub.m will remain in their tolerable ranges. Consequently a semiconductor device comprising the GaAs MESFET and a signal processing circuit cooperatively combined therewith can operate normally as initially designed, with the result of conspicuously improved radiation hardness.

Semiconductor device radiation hardened MESFET

A surface analyzer for analyzing physical properties of the surface of a sample by means of PELS (Proton energy loss spectroscopy) in which accelerated ion beams such as proton beams impinge on the sample in the vertical direction to the surface of the sample and ion beams scattered from the sample are decelerated and then detected by an analyzer to analyze the energy loss of the ion beams. The surface analyzer comprises an ion beam source for generating ion beams, deflecting means for deflecting the ion beams from the ion beam source, irradiating the surface of the sample with the ion beams from the ion beam source in the vertical direction to the surface of the sample, and deflecting scattered ion beams from the sample, accelerating and decelerating means for accelerating the ion beams before the ion beams impinge on the sample and decelerating the scattered ion beams, and analyzing means for detecting the scattered beams and analyzing energy loss of the ion beams.

Surface analyzer

Growing community of inventors

Kyoto, Japan

Naoto Okazaki