Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Matsushita Electronics Corporation

Naoto Niisoe

Hitoshi Doi

Toshihiko Yano

Tohru Yamada

Rieko Nishio

Kazuhisa Hirata

Hiroe Ogata

A first oxide film () is formed on a semiconductor substrate (). A first nitride film () is formed on first gate electrode formation regions of the first oxide film (). A plurality of first gate electrodes () are provided on the first nitride film () so as to be spaced apart from one another with a predetermined distance therebetween. A second oxide film () covers upper part and side walls of each of the first gate electrodes (). A sidewall spacer () of a third oxide film is buried in an overhang portion generated on each side wall of each of the first gate electrodes () covered by the second oxide film (). A second nitride film () covers the second oxide film (), the sidewall spacer () and part of the first oxide film () located between the first gate electrodes (). A plurality of second gate electrodes () are formed on at least part of the second nitride film () located between adjacent two of the first gate electrodes ().

Solid state imaging device and method for fabricating the same

In a solid-state imaging device, a light-shielding filmis formed of at least one of a high melting point metal film or a high melting point metal compound film. The surface of the light-shielding filmis constituted by an amorphous silicon film. Instead of the amorphous silicon film, the surface of the light-shielding film may be covered with any one of a high melting point metal film containing silicon, a high melting point metal silicide film and an oxide film. Thus, the adherence between the light-shielding filmand the resist can be increased and the resist can be prevented from being peeled from the light-shielding film, and thus a solid-state imaging device with a high yield even with small pixels and a method for producing the same can be provided.

Solid-state imaging device and method for producing the same

On a light shielding film, an anti-oxidation layercovering at least the light shielding filmis formed. The anti-oxidation layeris formed under a condition which does not oxidize a surface of the light shielding film. The anti-oxidation layeris formed of a high melting point metal compound film having a light shielding property or an insulating film having a light transmissive property. Thus, the scattering ratio of the incident light at the surface of the light shielding filmcan be uniform among all the pixels, and as a result, a solid state imaging device having suppressed sensitivity non-uniformity can be realized. Since the surface of the light shielding filmis not oxidized, the thickness of the light shielding filmcan be reduced. Thus, the present invention can comply with the demand for size reduction of the pixels.

Solid state imaging device and method for producing the same

The invention provides a method for manufacturing a semiconductor device with which an impurity introduction region and a positioning mark region can be formed aligned, based on a common insulating film pattern. The method for manufacturing a semiconductor device includes an insulating film pattern formation step; a first photosensitive pattern formation step of forming, on the insulating film pattern, a first photosensitive pattern with an aperture that exposes a positioning mark region, the first photosensitive pattern covering an impurity introduction region; a level difference formation step of forming in the semiconductor substrate, at the aperture formed in the insulating film pattern, a level difference for adjusting a position of the photomask at the positioning mark region; a first photosensitive pattern removal step of removing the first photosensitive pattern; and an impurity introduction step of introducing the impurities through the aperture formed in the insulating film pattern into the impurity introduction region.

Method for manufacturing semiconductor device

A solid-state imaging device comprises photodiodes arranged in columns on a light receiving region, and CCDs arranged in alternations with the columns of the photodiodes; wherein, when charges are stored, a potential barrier of an isolation area between CCDs formed between the photodiodes and the CCDs is formed higher with respect to signal charges than a potential barrier of an isolation area between photodiodes formed between the photodiodes. By this solid-state imaging device, signal charges generated by the incident light on this isolation area between photodiodes can appropriately be stored in the photodiodes. Therefore, it is not necessary to form a metal shielding film on the isolation area between photodiodes, and the efficient area of the photodiodes is increased by taking the area of the photodiodes at maximum. Thus, high sensitivity is obtained.

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Kyoto, Japan

Naoto Niisoe