Tokuyama Corporation

Sun-tox Co., Ltd.

Naoto Mochizuki

Hiroyuki Oda

Hiroshi Kato

Isao Masada

Ryuji Ishimoto

Yoji Inui

Hiroyuki Kono

Hideki Umekawa

Hironori Honda

Yoshihiro Kimura

A metal powder having a BET specific surface area of 5 to 250 m/g is obtained by contacting and mixing together a gas of a metal chloride (metal source gas) and a reducing gas (e.g., hydrogen gas) that have been separately heated so as to instantaneously form fine metal particles based on the gas phase reduction reaction thereof, and collecting the fine metal particles from the gas stream after the reaction.

Method of producing metal powder

Provided are a gas-barrier film which is a laminate comprising a substrate layer comprising a thermoplastic resin film and a gas-barrier layer comprising a hydrolysate of a silicon alkoxide, a stratified silicate and a polyvinyl alcohol base resin, wherein a radius (Rg) of gyration of a scattering matter which is measured by light scattering in the gas-barrier layer described above is 2.4 &#x3bc;m or less, and the silicon alkoxide and/or the hydrolysate thereof are present between the layers of the stratified silicate present in the above gas-barrier layer. The above film shows an excellent gas-barrier property even under such a high humidity as exceeding 90% RH.

Gas-barrier film and gas-barrier coating agent, and method for production thereof

A polishing slurry having a high polishing rate is provided. A polishing slurry comprising water, fumed silica having an average primary particle size of 9 to 60 nm and spherical silica having an average primary particle size of 40 to 600 nm excluding the fumed silica, wherein a content of the whole silicas obtained by totaling the fumed silica and the spherical silica falls in a range of 1 to 40% by weight, and a process for polishing a semiconductor device using the polishing slurry described above.

Polishing slurry and polishing method

Growing community of inventors

Shunan, Japan

Naoto Mochizuki