Kabushiki Kaisha Toshiba

Other

Fujitsu Corporation

Ebara Corporation

Jsr Corporation

Tokuyama Corporation

Naoto Miyashita

Koichi Takahashi

Masahiro Abe

Mariko Shimomura

Jun Takayasu

Ichiro Katakabe

Yoshitaka Matsui

Kenji Doi

Masako Kodera

Yoshihiro Minami

Mitsutoshi Koyama

Hiroyuki Ohashi

Hironori Sonobe

Katsuya Okumura

Hiroshi Tomita

Norio Kimura

Hiroshi Kawamoto

Soichi Nadahara

Shinji Nunotani

Mitsuhiko Shirakashi

Takeshi Nishioka

Kenro Nakamura

Takashi Yoda

Hiroshi Kato

Katsuhiko Tokushige

Kazuhiko Hayashi

Hiroshi Kinoshita

Hiroyuki Kohno

Masao Asami

Masayuki Hattori

Atsushi Shigeta

Yoshiro Baba

Nobuo Kawahashi

Tatsuo Akiyama

Kazuo Nishimoto

Satoshi Yanagiya

Akihiro Takemura

Kouichi Takahashi

Tetsuya Tsukihara

Kazuhiko Ida

Hideyuki Ando

Hiroshi Kosukegawa

Mikiko Kawaguchi

Tsuyoshi Okuda

Takashi Kanazawa

Koji Nishimoto

Tatsuaki Sakano

In manufacturing a semiconductor device, a part of an element is formed on the surface of a substrate, and at least a periphery of the substrate is polished using a polishing member stretched around the periphery of the substrate so that a polishing face of the polishing member is slid on a polishing target surface of the periphery.

Method for manufacturing semiconductor device and polishing apparatus

Based on numerical values with respect to factors influencing shares of existing products and a new product evaluated by more than one people, a structured neural network calculates predictive shares of the new product predicted by the respective persons. Comprehensive evaluations on the respective products and the new product are calculated for each person, based on the numerical values with respect to the respective factors. Correlation coefficients between the comprehensive evaluations on the respective products by the respective persons and the actual shares are calculated. The predictive shares calculated by the structural neural network are layered out in accordance with the correlation coefficients for the respective person. Average values of the predictive shares and confidence intervals are calculated for the respective layers, and based on them and the calculation result obtained by the structured neural network, a share of the new product is predicted.

Method of predicting initial input of new product, system for predicting initial input of new product, and recording medium

A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

Polishing method and apparatus

Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium. The second aqueous dispersion is composed of a first aqueous dispersion material (I) obtained by mixing a water-soluble quaternary ammonium salt and an inorganic acid salt into an aqueous medium, and a second aqueous dispersion material (II) obtained by mixing a water-soluble polymer and another basic organic compound other than the water-soluble quaternary ammonium salt into an aqueous medium. Abrasive grains are contained in at least one of the aqueous dispersion materials.

Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing

The surface of a semiconductor device is polished by first supplying a polishing pad with a slurry that contains a solvent, abrasive grains, and an additive for making the viscosity of the slurry variable so that the top portion of the polishing pad is soaked with the slurry, then supplying the polishing pad with a viscosity modifier for increasing the viscosity of the slurry and hardening the top portion of the polishing pad soaked with the slurry, and finally polishing the surface of the semiconductor device with the slurry having its viscosity increased and the polishing pad having its top portion hardened.

Method of chemical/mechanical polishing of the surface of semiconductor device

A target material is electropolished by applying a voltage between an anode electrode and a counter electrode while bringing the anode electrode into contact with the surface of the target material. The anode electrode is formed of an electrode material having a current density not higher than 10 mA/cm upon application of a voltage of &plus;2.5V vs. silver/silver chloride electrode within a 0.1 M perchloric acid solution in an electrochemical measurement using a potentiostat.

Electropolishing method

In forming an electrolytic water, pure water or ultra-pure water is added to at least one solid supporting electrolyte selected from the group consisting of oxalic acid, ammonium oxalate, ammonium formate, ammonium bicarbonate, and ammonium tartrate to prepare a solution saturated with the supporting electrolyte. The solution containing the supporting electrolyte is subjected to hydrolysis to obtain an anodic water and a cathodic water.

Method and apparatus for forming electrolytic water and apparatus for washing semiconductor substrate using electrolytic water-forming apparatus

A dresser is used which makes it possible to simultaneously dress and condition the surface of a polishing pad deteriorated by polishing a semiconductor wafer in the CMP process. The dresser is a dresser comprised of a ceramic such as dressing SiC, SiN, alumina or silica. Use of this dresser enables to shorten the time of dressing/conditioning the deteriorated polishing pad.

Method for dressing a polishing pad, polishing apparatus, and method for manufacturing a semiconductor apparatus

A semiconductor wafer or a film formed thereon is polished by using a polishing agent comprising abrasive containing silica particles as the main component, water as a solvent, and a water-soluble cellulose, an alkali metal impurity content of the polishing agent being 5C ppm or less where the polishing agent contains C % by weight of the water-soluble cellulose, so as to flatten the semiconductor wafer without doing damage to the wafer or the film formed thereon and without bringing about a dishing problem in the polished surface.

Abrasive and method for polishing semiconductor substrate

A double side cleaning apparatus includes a pair of roll-like brushes and at least one cleaning brush. The roll-like brushes are driven to rotate in opposite directions, and a semiconductor wafer is arranged between them in a non-contact manner. The cleaning brush is arranged near the pair of roll-like brushes. While the semiconductor wafer is arranged between the pair of roll-like brushes and its upper and lower surfaces are being cleaned, the cleaning brush brushes the side surface of the semiconductor wafer. A cleaning agent is supplied from the pair of roll-like brushes to the semiconductor wafer to clean it. Since the upper and lower surfaces of the semiconductor wafer are cleaned in a non-contact manner, dust can be removed efficiently (within a short period of time and a small space).

Double side cleaning apparatus for semiconductor substrate

In a CMP process for flatting a surface of a film on a semiconductor wafer, ionized water is used as rinsing liquid in the post-polishing step performed after the main CMP polishing step. With ionized water as rinsing liquid, abrasive particles adhered to the film surface during the main polishing step are removed.

Method of manufacturing a semiconductor device and an apparatus for

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Yokohama, Japan

Naoto Miyashita