Nec Electronics Corporation

Nec Corporation

Nec Compound Semiconductor Devices, Ltd.

Naoto Kurosawa

Takaki Niwa

Hidenori Shimawaki

Masahiro Tanomura

Naotaka Kuroda

Shuji Asai

Tadachika Hidaka

Takashi Ishigaki

Koji Azuma

Hirokazu Oikawa

A semiconductor apparatus includes a semiconductor device formed to a first surface of a semiconductor substrate, a blocking film provided in a first via-hole, the first via-hole formed with a concave shape to the first surface of the semiconductor substrate, a first via line connected to an electrode of the semiconductor device in contact with the blocking film, a second via line formed inside a second via-hole, electrically connected with the first via line with the blocking film interposed therebetween and being apart of a wiring formed to a second surface, the second via-hole formed with a concave shape to the second surface opposing the first surface of the semiconductor substrate so as to reach the blocking film. The blocking film includes at least one kind of group 8 element.

Semiconductor apparatus

A heterojunction bipolar transistor includes a first conductivity type subcollector layer, a first collector layer containing a first conductivity type impurity, a third collector layer containing a higher concentration of the first conductivity type impurity than the first collector layer, a second collector layer containing a lower concentration of the first conductivity type impurity than the first collector layer, a second conductivity type base layer, a first conductivity type emitter layer containing a semiconductor with a wider bandgap than the base layer, and a first conductivity type emitter cap layer.

Heterojunction bipolar transistor

A semiconductor device having sufficiently high heat dissipation performance while inhibiting an increase in the area of a chip is provided. In semiconductor device, a plurality of HBTsand a plurality of diodesare one-dimensionally and alternately arranged on semiconductor substrate. Anode electrodeof diodeis connected to emitter electrodeof HBTvia common emitter wiring. Diodeworks as heat dissipating elements dissipating to semiconductor substratethe heat transmitted through common emitter wiringfrom emitter electrode, and also works as a protection diode connected in parallel between an emitter and a collector of HBT

Transistor with heat dissipating means

A semiconductor device includes a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer, which are sequentially laminated on a substrate. It also includes an emitter electrode, a base electrode, and a collector electrode, which are respectively formed on the emitter cap layer, the base layer, and the sub-collector layer. The sub-collector layer is made up of a first sub-collector layer adjacent to the substrate and a second sub-collector layer adjacent to the collector layer. In the area between adjacent device elements, the first sub-collector layer has an element insulating region created by ion implantation, and the second sub-collector layer has a recess-shaped element insulating region.

Semiconductor device and method of manufacturing the same

A heterojunction bipolar transistor has a raised breakdown voltage and restrains the rising characteristic of I-Vcharacteristic from degrading. The collector region includes first, second, and third collector layers of semiconductor. The first collector layer is made of a doped or undoped semiconductor in such a way as to contact the sub-collector region. The second collector layer is made of a doped or undoped semiconductor having a narrower band gap than the first collector layer in such a way as to contact the base region. The third collector layer has a higher doping concentration than the second collector layer in such a way as to be located between or sandwiched by the first collector layer and the second collector layer.

Growing community of inventors

Kanagawa, Japan

Naoto Kurosawa