National Institute of Advanced Industrial Science and Technology

Japan Science and Technology Agency

Tokyo University of Science

Naoto Kikuchi

Tsuneo Watanabe

Akira Iyo

Yasumoto Tanaka

Kazuyasu Tokiwa

Norio Terada

Akane Samizo

Shiro Kawabata

Athinarayan Sundaresan

Yoshihiro Aiura

Shintarou Ikeda

Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a pyrochlore structure, containing at least one or more kinds of elements selected from Nb and Ta, and containing Sn element, and its holes become charge carriers by the condition that Sn/(Sn+Sn) which is a ratio of Snto a total amount of Sn in the composite oxide is 0.124&#x2264;Sn/(Sn+Sn)&#x2264;0.148.

P-type oxide semiconductor and semiconductor device having pyrochlore structure

A quantum Turing machine constituted using a quantum bit created by localizing a phase difference soliton S between superconducting electrons existing in each of multiple of bands in a ring Rthat includes a ring main body Rformed of a superconductor, and well-shaped portions W, Wformed with a reduced line-width at at least two positions on the ring main body R, can easily constitute a quantum bit, can surely execute a basic logical operation, has multiple-bit capability and, moreover, can ensure sufficient time for executing a quantum algorithm.

Quantum turing machine

Growing community of inventors

Tsukuba, Japan

Naoto Kikuchi