Panasonic Corporation

Nuvoton Technology Corporation Japan

Naoto Kii

Yoshikazu Katoh

Yuhei Yoshimoto

Hirofumi Wada

A non-volatile memory device includes: a memory group of a plurality of variable resistance memory cells in which digital data is recorded according to a magnitude of a resistance value, the memory group including at least one data cell and at least one dummy cell which are associated with each other; and a read circuit which performs, in parallel, a read operation on each of the plurality of memory cells included in the memory group. Dummy data, for reducing a correlation between a side-channel leakage generated when the read operation is performed by the read circuit and information data recorded in the at least one data cell, is recorded in the at least one dummy cell.

Non-volatile memory device and method of writing to non-volatile memory device

A communication apparatus according to the present invention comprises a transmitter for generating and transmitting a data signal where data is superposed as time length of a pulse interval, and a receiver for receiving the data signal. The transmitter and the receiver are connected through a single communication line. The receiver comprises: a receiver-side oscillator circuit for oscillating a reference pulse as a count reference of the data signal; a counter circuit for counting a pulse interval of the received data signal by converting it to a reference pulse number of the oscillator circuit; and a comparator circuit stores a first reference value therein, and judges data of the data signal by comparing the pulse interval of the data signal counted by the counter circuit with the first reference value.

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Osaka, Japan

Naoto Kii