Nichia Corporation

Naoto Furuha

Yoshiki Inoue

Tadaaki Ikeda

Hiroki Fukuta

A light emitting element includes a semiconductor layered body, an insulating film, first and second electrodes, and first and second external connection portions. The semiconductor layered body defines exposed portions in which the first semiconductor layer is exposed from the second semiconductor layer and the light emitting layer. In the plan view, the first external connection portion includes a plurality of first portions located between the exposed portions in a first direction, and arrayed in the first direction, with a number of the first portions disposed between adjacent ones of the exposed portions being two or more, and a plurality of second portions not located between the exposed portions in the first direction, and arrayed in the first direction. Each of the second portions is different in shape or size from each of the first portions.

Light emitting element and light emitting device

A light emitting element includes a support substrate, and first and second light emitting portions. Each of the first light emitting portion and the second light emitting portion includes a semiconductor layered body, an insulating film, first and second electrodes and first and second external connection portions. The first external connection portion provided in the first light emitting portion includes a first portion provided adjacent to the second external connection portion of the first light emitting portion in a first direction and provided adjacent to the first external connection portion of the second light emitting portion in a second direction, and the first portion has an inclined portion inclined with respect to one side of the semiconductor layered body on a side facing the first external connection portion provided in the second light emitting portion in the second direction.

A method of manufacturing a light emitting element includes: providing a first light emitting part and a second light emitting part, the first light emitting part comprising a first base member and a first semiconductor layered body, the second light emitting part comprising a second base member and a second semiconductor layered body; bonding the first and second light emitting parts to each other such that the first base member and the second base member are disposed between the first semiconductor layered body and the second semiconductor layered body; disposing a light reflecting member to cover the bonded first and second light emitting parts; removing a portion of the light reflecting member to expose surfaces of the first and second base members; and disposing a wavelength conversion member on the exposed surface of the first base member and the exposed surface of the second base member.

Method of manufacturing light emitting element

A light-emitting device includes a semiconductor stacked body having first and second semiconductor layers. The second semiconductor layer includes conductive portions contacting a second conductive layer and having island configurations. The conductive portions are disposed in a first region, a second region, a third region, and a fourth region. The first region is positioned at a periphery of a first corner of the semiconductor stacked body. The second region is positioned at a periphery of a second corner of the semiconductor stacked body. The third region is positioned at a periphery of a third corner of the semiconductor stacked body. The fourth region is positioned at a periphery of a fourth corner of the semiconductor stacked body. A density of the conductive portions disposed in the first region is greater than densities of the conductive portions disposed in the second region, the third region, and the fourth region.

Light-emitting device

A light emitting element includes: a light reflecting member including a first region and a second region; a first semiconductor layered body disposed between the first region and the second region and configured to emit first light having a first peak wavelength; a second semiconductor layered body disposed between the first semiconductor layered body and the second region and configured to emit second light having a second peak wavelength different from the first peak wavelength; a base member disposed between the first semiconductor layered body and the second semiconductor layered body; and a wavelength conversion member on which the first light and the second light is incident, the wavelength conversion member producing third light having a third peak wavelength different from the first peak wavelength and the second peak wavelength.

Growing community of inventors

Kaifu-gun, Japan

Naoto Furuha