Kabushiki Kaisha Toshiba

Toshiba Energy Systems & Solutions Corporation

Naotake Watanabe

Kazuhiro Ueda

Takayuki Masunaga

Koji Maruno

Hideo Nishiuchi

Yasuhito Saito

Takashi Togasaki

Masayuki Arakawa

Yoshiyuki Shimizu

Toshihiko Kida

Tetsuro Komatsu

Tomohiro Iguchi

Ikuo Mori

Hiroki Sekiya

Shimpei Yoshioka

Nobumitsu Tada

Kenta Fukatsu

Yasunari Ukita

Daisuke Hiratsuka

Hitoshi Matsumura

Yuuji Hisazato

Hiroaki Ito

Naotaka Iio

Kazuyasu Takimoto

Toshiharu Ohbu

Yuta Ichikura

Satoshi Sayama

Naoki Yamanari

Yoshitoshi Fukuchi

According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.

Semiconductor device

According to one embodiment, a semiconductor device includes a first conductor, a second conductor, and an envelope. The first conductor includes a first radiation surface. The second conductor includes a second radiation surface. The envelope includes a first envelope portion which is composed of a first insulative material and is formed such that the first envelope portion seals a semiconductor, and a second envelope portion which is composed of a second insulative material and is formed in contact with the first radiation surface and the second radiation surface.

Semiconductor device and method of manufacturing semiconductor device

According to one embodiment, a semiconductor power converter includes first and second electrical conductors opposed to each other, first and second semiconductor elements joined to a first joint surface of the first electrical conductor, first and second convex electrical conductors joined to the first and second semiconductor elements, a junction joined to the first and second convex electrical conductors and a second joint surface of the second electrical conductor, power terminals, signal terminals, and an envelope sealing the constituent members. The envelope includes a flat bottom surface which extends perpendicular to the semiconductor elements and in which first and second bottom surfaces of the electrical conductors are exposed.

Semiconductor power converter and method of manufacturing the same

According to one embodiment, a semiconductor device includes a first electrical conductor, a second electrical conductor, first and second semiconductors between the first and second electrical conductors, a first power terminal, a second power terminal, a signal terminal, and an insulator which covers the components. The insulator includes a flat bottom surface in which the first and second electrical conductors are exposed, a ceiling surface, a first end surface, and a second end surface. The power terminals and the signal terminal extend outwardly from the first and second end surfaces, and the ceiling surface, respectively. The first end surface, the ceiling surface, and the second end surface are formed with a parting line.

Included are a semiconductor package, a first bus bar, a second bus bar and a soldering control unit. The semiconductor package includes a power semiconductor element, a first electrode plate and a second electrode plate. The first bus bar is a conductive member which is soldered onto the main surface of the first electrode plate through a first solder member. The second bus bar is a conductive member which is soldered onto the main surface of the second electrode plate through a second solder member. The soldering control unit is provided on each of the main surface of the first bus bar to which the first electrode plate is soldered and the main surface of the second bus bar to which the second electrode plate is soldered, and controls the solder joint thickness.

Power semiconductor module

A semiconductor package includes a semiconductor device having a first main surface and a second main surface, a first electrode plate provided on the first main surface, a second electrode plate provided on the second main surface, and a wiring substrate provided between the semiconductor device and the first electrode plate, in which a plurality of opening portions in the side surface of a protruding portion provided on the first electrode plate are engaged respectively with a plurality of engaging portions which face the opening portions and which are provided on the inner side surface of an intrusion opening portion in the wiring substrate into which the protruding portion is intruded.

Semiconductor package and method for manufacturing the same

A semiconductor device-manufacturing method includes a laminated wafer formation step and a dicing step. In the laminated wafer formation step, a metal plate is first laid on one side of a wafer with a solder material interposed, and then the metal plate and the wafer are subjected to decompression pressing to form a one-piece structure. As a result, a laminated wafer is obtained. In the dicing step, the laminated wafer is diced into laminated chips.

Semiconductor device-manufacturing method for manufacturing semiconductor devices with improved heat radiating efficiency and similar in size to semiconductor elements

In a stacked-type semiconductor unit having a plurality of semiconductor devices stacked on a base board including a base electrode, each semiconductor device has a wiring board including an external electrode provided in an end portion thereof. The semiconductor devices are stacked on the base board such that the external electrodes are aligned with one another. Then, the external electrodes are electrically connected to the base board by solder.

Semiconductor device having a plurality of stacked wiring boards

A semiconductor device comprises a first wiring board and a second wiring board, wherein the first wiring board includes a first semiconductor element arranged on the underside of the first wiring board, and a second connecting section formed on the underside of the first wiring board, the second wiring board includes a second semiconductor element, and a third connecting section formed on the surface of the second wiring board, the second connecting section has a first external connecting land, the third connecting section is arranged opposite to the first external connecting land and has a second external connecting land which is smaller than the first external connecting land, and the second and third connecting sections are formed such that a combined thickness thereof provides a given space between the first semiconductor element and the second wiring board.

Stacked semiconductor device and method for manufacturing the same

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Yokohama, Japan

Naotake Watanabe