Fuji Xerox Co., Ltd.

Naotaka Mukoyama

Nobuaki Ueki

Ryoji Ishii

Hideo Nakayama

Akemi Murakami

Yasuaki Kuwata

Akira Matsumoto

Akira Sakamoto

Hiroyoshi Okuno

Kazuhiro Sakai

Yutaka Sugizaki

Tsutomu Kubo

Tsuyoshi Inoue

Masahiro Okita

Hiroki Sugibuchi

Yusaku Shibuya

An optical transmission apparatus includes a light receiving element and an optical waveguide. The light receiving element receives light. The optical waveguide includes a core, a clad and a concave portion. The clad is adjacent to the core. The concave portion is formed in a portion of the core or a portion of the clad and diffuses the light. The portion of the core or the portion of the clad emits the light toward the light receiving element.

Optical transmission apparatus

There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.

Semiconductor laser apparatus and fabrication method of the same

A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.

Light-emitting module

A VCSEL including a substrate, a first semiconductor layer of a first conductivity-type formed on the substrate, an active layer formed on the first semiconductor layer, a second semiconductor layer of a second conductivity-type formed on the active layer, a first electrode wiring formed on a main surface of the substrate and electrically connected with the first semiconductor layer, a second electrode wiring formed on the main surface of the substrate and electrically connected with the second semiconductor layer, and a light emitting portion formed on the substrate for emitting laser light. A contact portion at which the first electrode wiring is electrically connected to the first semiconductor layer is formed in a range equal to or greater than &#x3c0;/2 radians and within &#x3c0; radians, centering on the light emitting portion.

VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device

A vertical cavity surface emitting laser diode includes a lower semiconductor reflector, an active region, an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector, a metallic part being formed on the upper semiconductor reflector, which has a first aperture defining an output region of laser light generated in the active region, and a light confining region being provided between the metallic part and the lower semiconductor reflector, and having a second aperture defining an emission region of the laser light. The upper semiconductor reflector includes a lenticular medium having a convex surface toward the lower semiconductor reflector.

Vertical cavity surface emitting laser diode and process for producing the same

An image-forming process capable of keeping a high transfer efficiency for a long period of time, reducing the amount of the toner to be recovered and wasted and obtaining stabilized images without causing image quality defects such as density lowering, density unevenness, ghosts, fog, etc., wherein inorganic fine particles contained in a toner transfer from the toner to an electrostatic latent image holder surface and attach thereto, the attached amount of the inorganic fine particles to the electrostatic latent image holder surface is from 1 to 20% as the average occupied area ratio (C ) in the electrostatic latent image holder surface, and the difference (C &minus;C ) of the maximum occupied area ratio and the minimum occupied area ratio of the attached inorganic fine particles in the electrostatic latent image holder surface is not larger than about 5%.

Growing community of inventors

Kanagawa, Japan

Naotaka Mukoyama