Kabushiki Kaisha Toshiba

Toshiba Energy Systems & Solutions Corporation

Toshiba Mitsubishi-Electric Industrial Systems Corporation

Naotaka Iio

Hajime Yamamoto

Yosuke Nakazawa

Masayuki Ando

Yoshiaki Ohda

Ryuta Hasegawa

Hiroki Sekiya

Naotake Watanabe

Ryo Nakajima

Nobumitsu Tada

Yushi Koyama

Daisuke Hiratsuka

Hitoshi Matsumura

Yuuji Hisazato

Kenichiro Omote

Toshiaki Matsumoto

Hiroaki Ito

Kazuyasu Takimoto

Toshiharu Ohbu

Kazuhisa Kanaya

Yuta Ichikura

Makoto Mukunoki

Naoki Yamanari

Daisuke Yoshizawa

Toshikazu Nagata

Kousuke Shikimi

Tetsuya Nakamoto

According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.

Semiconductor device

To provide a pressure contact type semiconductor device stack which can uniformly pressurize pressure contact type semiconductor devices irrespective of presence or absence of a notch portion of the pressure contact type semiconductor device, and can prevent thermal destruction of the relevant pressure contact type semiconductor device. A pressurizing device for pressurizing between pressure contact type semiconductor devices and heat sinks which have been stacked is provided with pressuring bodies arranged at the upper and lower surfaces, metal fittings for insulating plate each for distributing a pressure applied by the pressuring body to an outer circumferential surface, and insulating plates each for pressuring the relevant heat sinks by the pressure applied to a pressurizing surface of the relevant metal fitting for insulating plate, the pressure contact type semiconductor device has a notch portion at a part of a peripheral portion of a post surface of any one of a collector post surface or an emitter post surface, and a device for making a distance from a pressurizing surface of the metal fitting for insulating plate pressurized by the upper surface pressurizing body to a front surface of a chip equal to a distance from a pressurizing surface of the metal fitting for insulating plate pressurized by the lower surface pressurizing body to a back surface of a chip is provided.

Pressure contact type semiconductor device stack

A control system for a power conversion system, composed of at least one voltage source type converter and a transformer. The control system includes, a circuit for detecting line-to-line voltages of an AC power source, an instantaneous phase detecting circuit for detecting instantaneously a phase angle of a phase voltage of the AC power source based on the line-to-line voltages of the AC power source, a circuit for detecting AC currents outputted from the power conversion system, a first coordinate transformation circuit for converting AC currents into an active current detected value and a reactive current detected value in a coordinate determined by a phase voltage vector of the AC power source using the phase angle, a current control circuit for generating output signals based on a current control result, a second coordinate transformation circuit for converting the output signals of the current control circuit into two-phase signals in a static coordinate system using the phase angle, a pulse width modulation control circuit for generating pulse width modulated signals, based on a pulse width modulation control result, and a circuit for generating gate pulses based on the pulse width modulated signals.

Control system for power conversion system

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Saitama, Japan

Naotaka Iio