Sumitomo Metal Industries, Inc.

Sumitomo Sitix Corporation

Naoshi Adachi

Masakazu Sano

Takehiro Hisatomi

Shinsuke Sadamitsu

Hideshi Nishikawa

Masataka Horai

Tsuyoshi Kubota

An object of the present invention is to provide a single-crystal silicon wafer where octahedral voids of Grown-in defects, which are the generation source of COP on the surface and COP at several .mu.m depth of the surface layer of the single-crystal silicon wafer grown by the CZ method, are effectively eliminated, and a fabrication method of this wafer, where oxygen near the surface is out-diffused by annealing in a hydrogen and/or inactive gas ambient and oxide film on the inner walls of the octahedral voids near the surface are removed by the created unsaturated oxygen area, then oxidation annealing is performed in an oxygen ambient or mixed gas ambient of oxygen and inactive gas, so that interstitial silicon atoms are forcibly injected to completely eliminate the octahedral voids near the surface, and at the same time an IG layer is created in the bulk of the wafer.

Semiconductor silicon wafer, semiconductor silicon wafer fabrication

This invention anneals a vertical stack of two or more groups of unseparated wafers, with approximately 10 wafers in each group. The invention makes it possible to anneal more wafers in a single annealing operation under a variety of conditions, including: oxygen outer diffusion annealing to form a denuded zone; annealing to control bulk micro defects and provide intrinsic gettering functions; annealing to enhance gate oxide integrity by eliminating crystal-originated particles from the wafer surface and internal grown-in or as-grown defects; and suppression of dislocation and slip in elevated temperature environments.

Silicon single crystal wafer annealing method and equipment, and silicon

Silicon single crystal wafer annealing method and equipment and silicon

Method of annealing a semiconductor wafer in a hydrogen atmosphere to

Growing community of inventors

Ogi-gun, Japan

Naoshi Adachi