Elpida Memory, Inc.

Intermolecular, Inc.

Naonori Fujiwara

Xiangxin Rui

Kenichi Koyanagi

Sandra Guy Malhotra

Imran Hashim

Hanhong Chen

Hiroyuki Ode

Hiroyuki Kitamura

Takashi Arao

A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly-doped or non-doped material. The highly doped material will remain amorphous (&#x3c;30% crystalline) after an anneal step. The high band gap material will remain amorphous (&#x3c;30% crystalline) after an anneal step. The lightly-doped or non-doped material will become crystalline (&#x2267;30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack.

Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications

A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly or non-doped material. The highly doped material will remain amorphous (&#x3c;30% crystalline) after an anneal step. The high band gap material will remain amorphous (&#x3c;30% crystalline) after an anneal step. The lightly or non-doped material will become crystalline (&#x2267;30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack.

Leakage reduction in DRAM MIM capacitors

A process for manufacturing semiconductor devices in an in-line processing includes the steps of: forming a silicon nitride film on a semiconductor wafer by nitrization in a reactor chamber having an inner pressure at a specific pressure; reducing the inner pressure from the specific pressure; raising the inner pressure up to the specific pressure; replacing the semiconductor wafer with another semiconductor wafer; and forming a nitride film on the another semiconductor wafer at the specific pressure.

In-line processing for forming a silicon nitride film

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Kure, Japan

Naonori Fujiwara