Mitsubishi Denki Kabushiki Kaisha

Nisshin Denki Kaushiki Kaisha

Naomitsu Fujishita

Kazuhiko Noguchi

Shigeo Sasaki

Takahisa Nagayama

Kazuhiro Shono

Tetsuya Nakanishi

Hidenobu Murakami

Masayasu Tanjo

Masao Naitou

Susumu Katoh

The present invention aims to extract a large electron beam and extend the service life of an electron source by effectively radiating an electron beam with low energy from a plasma chamber toward an ion extraction port, and optimally neutralizing space charges of ions in the vicinity of the ion extraction port. An electron source is installed behind a plasma chamber to control an extraction power supply, an electron accelerating power supply, and a lens power supply. Thereby, an electron beam is extracted from the power source, and accelerated. Then, the electron beam is carried through an electric field lens at a high speed, decelerated in the vicinity of the plasma chamber, then converged to radiate toward the ion extraction port. An aperture is installed at a crossover point of the electron beam to diminish backward flow of ionic gas from the plasma chamber to the electron source.

Ion source having plasma chamber, an electron source, and a plasma power

There is disclosed an electron shower apparatus which eliminates the adverse effect of a magnetic field on electrons and which provides electrons in sufficient quantity when primary electrons having low energy are employed. In the apparatus, the magnetic field generated by a filament current is decreased or eliminated by pulsing the filament current or by passing a current opposite in direction to the filament current in the vicinity of the filament current.

Electron shower apparatus including filament current control

An ion implantation apparatus includes an ion source having an arc chamber generating ions and a drawing electrode drawing ions from the arc chamber, a mass separator transporting only ions desired for implantation, an ion implantation chamber in which the material to be implanted by ions is placed, and a controller means for automatically controlling the distance between the arc chamber and the drawing electrode incrementally in accordance with a theoretical calculation using normalized perveance considering the kind of ions to be implanted, the accelerating voltage, and the ion current and current density distribution.

Ion implantation apparatus

Growing community of inventors

Amagasaki, Japan

Naomitsu Fujishita