Tdk Corporation

Naomichi Degawa

Takekazu Yamane

Satoshi Miura

Kenzo Makino

Takahiko Machita

Takumi Yanagisawa

Tetsuya Roppongi

Takayasu Kanaya

Akimasa Kaizu

Minoru Ota

Yoshikazu Sawada

Shohei Kawasaki

Kenta Hamamoto

Kosuke Tanaka

Daisuke Miyauchi

Shinji Hara

Soji Koide

Tetsuhito Shinohara

Yasushi Nishioka

Yoshikazu Soeno

Tsuyoshi Suzuki

Hisayoshi Watanabe

Hayato Koike

Masachika Hashino

Tetsuya Hiraki

Hidekazu Kojima

Provided are a light detection element, a receiving device, and a light sensor device. The light detection element includes a magnetic element that includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer is irradiated with light in a direction intersecting a stacking direction of the magnetic element.

Light detection element, receiving device, and light sensor device

A high-frequency device includes a magnetoresistance effect element which includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer positioned between the first and second ferromagnetic layers, a soft magnetic material body which covers at least a part of a periphery of the magnetoresistance effect element from outside in a plan view in a lamination direction of the magnetoresistance effect element, a non-magnetic material body which is positioned between the soft magnetic material body and the first ferromagnetic layer in the plan view in the lamination direction, and a high-frequency line which is connected to or spaced apart from the magnetoresistance effect element. The high-frequency line is configured to input or output a high-frequency current to or from the magnetoresistance effect element, or is configured to apply a high-frequency magnetic field caused by a high-frequency current flowing through the inside to the magnetoresistance effect element.

High-frequency device

Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer, and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is disposed below the overlapping part in the stacking direction, assuming that the overlapping part is above the magnetoresistance effect element in the stacking direction.

Magnetoresistance effect device with shaped high-frequency signal line overlapping magnetoresistance effect element

Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is formed to be thicker than at least a part of the overlapping part. A distance in the stacking direction between a virtual plane including a surface on the side of the overlapping part of the first ferromagnetic layer and a center line in the high-frequency signal line in the stacking direction is shorter in at least a part of the overlapping part than in at least a part of the non-overlapping part.

Magnetoresistance effect device

A magnetoresistance effect device includes: a magnetoresistance effect element formed by performing lamination such that a spacer layer is disposed between a first ferromagnetic layer and a second ferromagnetic layer; a high frequency signal line arranged on one side of the magnetoresistance effect element in a direction parallel to a lamination direction; and a magnetic member arranged at a position further away from the one side than the high frequency signal line when viewed from the magnetoresistance effect element, wherein the magnetic member has a concave portion which is recessed in a direction away from the high frequency signal line in a surface facing the high frequency signal line.

Magnetoresistance effect device having magnetic member with concave portion

At least one magnetoresistance effect element and a magnetic field applying unit to apply a magnetic field to the magnetoresistance effect element, the magnetic field applying unit includes a first ferromagnetic material having a portion protruding to the magnetoresistance effect element side in a stacking direction of the magnetoresistance effect element, a second ferromagnetic material sandwiching the magnetoresistance effect element with the first ferromagnetic material, and a coil wound around the first ferromagnetic material, a first magnetization free layer of the magnetoresistance effect element has a portion free of overlapping with at least one of a second surface of the protruding portion on the magnetoresistance effect element side and a third surface of the second ferromagnetic material on the magnetoresistance effect when viewed in the stacking direction, and a center of gravity of the first magnetization free layer, positioned in a region connecting the second surface and the third surface.

A magnetoresistance effect device includes a magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer of which a direction of magnetization is changeable relative to a direction of magnetization of the fixed layer, and a spacer layer sandwiched between the fixed and free layers, a first signal line configured to generate a high frequency magnetic field when a high frequency current flows and apply the field to the magnetization free layer, and a DC application terminal configured to be capable of connecting a power supply for applying a DC current or voltage in a stacking direction of the element, and the element is disposed with respect to the terminal so the DC current flows from the fixed layer to the free layer in the element or so the DC voltage at which the magnetization fixed layer is higher in potential than the magnetization free layer is applied.

Magnetoresistance effect device and high frequency device

A magnetic recording head is provided with a main magnetic pole that generates a recording magnetic field to be applied to a magnetic recording medium from an end surface which makes a portion of an air bearing surface, a trailing shield that is placed by interposing a write gap at a trailing side of the main magnetic pole, a spin torque oscillator that is placed within the write gap to be between the main magnetic pole and the trailing shield, and two side shields that are placed at both sides of the main magnetic pole in the cross track direction, and when viewed from the air bearing surface side, at least a portion of the trailing-side end surfaces of the side shields are offset toward a leading-side of the main magnetic pole from the leading-side end surface of the spin torque oscillator.

Magnetic recording head with spin torque oscillator, head gimbal assembly and magnetic recording apparatus

A magnetic recording head comprises: a main magnetic pole for generating a recording magnetic field applied to a magnetic recording medium from an end surface that is one part of an air bearing surface facing the magnetic recording medium; a trailing shield that is placed by interposing a write gap at a trailing side of the main magnetic pole; and a spin torque oscillator provided in the write gap; wherein, when viewed from the air bearing surface side, the length in the down-track direction between the trailing shield and the cross-track direction end portion of a first end face positioned at the main magnetic pole side of the spin torque oscillator is longer than the length in the down-track direction between the trailing shield and the main magnetic pole at a center position in the cross-track direction of the spin torque oscillator.

A magneto-resistive effect element (MR element) has an upper shield that is magnetized in a cross track direction, a lower shield that is positioned at an interval relative to the upper shield in a down track direction, and a multilayer film that is positioned between the upper shield and the lower shield and that faces an air bearing surface (ABS). The multilayer film has a free layer where its magnetization direction fluctuates relative to an external magnetic field, a pinned layer where its magnetization direction is pinned against the external magnetic field, a nonmagnetic spacer layer that is positioned between the free layer and the pinned layer, and an insulating layer that is positioned at a back side of the free layer viewed from the ABS. The MR element further has a pair of side shields that are positioned at both sides of the free layer and the insulating layer in a cross track direction. The side shields contact the upper shield on the sides of the free layer and the insulating layer in the cross track direction.

Magneto-resistive effect element having side shield integrated with upper shield

A magneto-resistive effect element (MR element) has a first shield layer; a second shield layer; an inner shield layer that is positioned between the first shield layer and the second shield layer, and that makes contact with the first shield layer and faces the air bearing surface (ABS); and a multilayer film that is positioned between the first shield layer and the second shield layer. The multilayer film has a free layer; a first pinned layer; a nonmagnetic spacer layer; a second pinned layer that fixes the magnetization direction of the first pinned layer; and an antiferromagnetic layer that is exchange-coupled with the second pinned layer. The antiferromagnetic layer faces the back surface of the inner shield layer viewed from the ABS. The MR element has an insulating layer positioned between the antiferromagnetic layer and the inner shield layer.

Magneto-resistive effect element with recessed antiferromagnetic layer

A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction. The magnetoresistive effect part includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer that sandwich the nonmagnetic intermediate layer from above and below, the upper shield layer and the lower shield layer have inclined magnetization structures in which magnetizations of them are respectively inclined with respect to a track width direction, the magnetizations of the upper shield layer and the lower shield layer are mutually substantially orthogonal, the first ferromagnetic layer is indirectly magnetically coupled with the upper shield layer via a first exchange coupling function gap layer that is positioned between the first ferromagnetic layer and the upper shield layer, and the second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via a second exchange coupling function gap layer that is positioned between the second ferromagnetic layer and the lower shield layer.

CPP-type magnetoresistance effect element and magnetic disk device

An MR element includes an MR part and upper and lower shield layers in a CPP structure. The MR element has side shield layers so as to interpose the MR part between the side shield layers in a track width direction. The MR part comprises a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer between the ferromagnetic layers. Each of the upper and lower shield layers has an inclined magnetization structure such that its magnetization is inclined relative to the track width direction. The side shield layers are magnetically coupled with the upper shield layer, respectively. The second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via an exchange-coupling functional gap layer. The side shield layer applies a bias magnetic field to the first ferromagnetic layer; and magnetizations of the first and second ferromagnetic layers are substantially orthogonal.

CPP-type magnetoresistance effect element and magnetic disk device using side shield layers

An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.

CPP-type magnetoresistive element including a rear bias structure and lower shields with inclined magnetizations

A measuring method measuring a resistance of a resistor of a magnetic sensor that includes the resistor is provided. The method includes a step of measuring an output voltage of the magnetic sensor in an AC magnetic field, a step of measuring a first combined resistance of the MR element and the resistor in no magnetic field, a step of measuring a second combined resistance of the MR element and the resistor in a constant magnetic field of which a direction and strength are substantially the same as a magnetic field, a step of measuring a third combined resistance of the MR element and the resistor in another constant magnetic field of which a direction and strength are substantially the same as another magnetic field, and a step of calculating the resistance of the resistor based on the output voltage, the first, second and third combined resistance.

Growing community of inventors

Tokyo, Japan

Naomichi Degawa