Toshiba Memory Corporation

Kioxia Corporation

Fujitsu Semiconductor Limited

Naomi Yanai

Fuyuma Ito

Hiroyuki Ogawa

Yasuhito Yoshimizu

Tomohiko Sugita

Hakuba Kitagawa

Yuka Kase

Tatsuhiko Koide

Takaumi Morita

Hiroki Nakajima

A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.

Semiconductor substrate, method of manufacturing semiconductor device, and method of manufacturing semiconductor substrate

According to one embodiment, a substrate treating method includes: providing a first liquid onto a pattern on a substrate; providing, after the first liquid is provided, a second liquid containing a first substance to form a film containing the first substance on the pattern; providing, after the second liquid is provided onto the pattern, a third liquid; turning the third liquid into gas; and turning, after the third liquid is turned into gas, the film into gas.

Substrate treating method and semiconductor device manufacturing method

A semiconductor device production method includes: treating a wafer which contains a silicon substrate with dilute hydrofluoric acid in a bath; introducing water into the bath while discharging the dilute hydrofluoric acid from the bath; and introducing HOand warm water warmer than the above-mentioned water into the bath after the discharge of dilute hydrofluoric acid from the bath in such a manner that the introduction of warm water is started simultaneously with the start of HOsupply or subsequently to the start of HOsupply.

Method of producing a semiconductor device including treatment with dilute hydrofluoric acid

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Kuwana, Japan

Naomi Yanai