Kioxia Corporation

Toshiba Memory Corporation

Naomi Fukumaki

Masayuki Kitamura

Satoshi Wakatsuki

Hiroko Tahara

Takashi Shimizu

Takashi Fukushima

Masaaki Hatano

Shigeru Kinoshita

Seiichi Omoto

Takashi Ohashi

Akitsugu Hatazaki

Tomohisa Iino

Hiroshi Toyoda

Masakatsu Takeuchi

Kenichi Ide

Misuzu Sato

According to one embodiment, a film forming method includes alternately performing a first process including at least two times of a first sequence and a second process including at least one time of a second sequence. The first sequence includes supplying a film forming gas into a film forming chamber, supplying a first purge gas into the film forming chamber, supplying a first reduction gas into the film forming chamber, and supplying a second purge gas into the film forming chamber, in order, and the second sequence includes supplying a second reduction gas into the film forming chamber, and supplying a third purge gas into the film forming chamber, in order.

Film forming method and apparatus

According to one embodiment, a semiconductor memory device includes: a plurality of first conductive layers that each include tungsten; a plurality of insulating films that include a stacked portion and a first projecting portion projecting; a semiconductor layer extending through an inside of a stacked body; a charge storage layer arranged between the plurality of first conductive layers and the semiconductor layer; a plurality of second conductive layers that are each arranged on the first projecting portion in such a manner as to be in contact with a single first conductive layer and that include silicon containing an impurity; and a plurality of contact plugs that are each provided on a single second conductive layer in such a manner as to be in contact with the single second conductive layer.

Semiconductor memory device

A semiconductor device according to an embodiment includes: a barrier metal layer provided on a surface of an insulating layer; and a conductive layer having a first metal layer provided on a surface of the barrier metal layer, and a second metal layer provided on a surface of the first metal layer. The second metal layer includes an identical metal to metal of the first metal layer, and an impurity configured to remove fluorine bonded to the metal.

Semiconductor device and manufacturing method thereof

In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked film alternately including a plurality of first insulating layers and a plurality of second insulating layers, and forming a hole in the stacked film. The method further includes forming a first film, a first insulator, a charge storage layer, a second insulator and a first semiconductor layer in order in the hole, and forming a plurality of concave portions by removing the plurality of first insulating layers. The method further includes exposing the first insulator from the plurality of concave portions by removing the first film between the plurality of concave portions and the first insulator, and forming a plurality of electrode layers in the plurality of concave portions.

Semiconductor device and method of manufacturing the same

In one embodiment, a semiconductor device includes a stacked film alternately including a plurality of electrode layers and a plurality of insulating layers. The device further includes a first insulator, a charge storage layer, a second insulator and a first semiconductor layer that are disposed in order in the stacked film. The device further includes a plurality of first films disposed between the first insulator and the plurality of insulating layers. Furthermore, at least one of the first films includes a second semiconductor layer.

A semiconductor device according to one embodiment includes a semiconductor substrate, a stack body including metal films and first insulating films alternately stacked on the semiconductor substrate and including a stepped end portion, conducting films respectively protruding from the metal films on all steps of the end portion, contact portions respectively provided above the conducting films, a second insulating film surrounding side surfaces of the contact portions, and a barrier metal film provided between the second insulating film and the contact portions and between the conducting films and the contact portions. The entire top surfaces of the conducting films are covered by the barrier metal film and the second insulating film.

Semiconductor device having a stack body including metal films and first insulating films alternately stacked on a semiconductor substrate and including a stepped end portion and manufacturing method thereof

In one embodiment, a semiconductor manufacturing apparatus includes first and second tanks configured to store a gas fed from a gas feeder. The apparatus further includes a chamber configured to process a wafer by using the gas fed from the gas feeder, the first tank or the second tank. The apparatus further includes a controller configured to control feeding of the gas to the first tank, the second tank and the chamber.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

A semiconductor device according to this embodiment includes a semiconductor layer, a plurality of diffusion layers in the semiconductor layer, a gate insulating film, a gate electrode, first contacts, and second contacts. The gate insulating film is on the semiconductor layer between the plurality of diffusion layers. The gate electrode is on the gate insulating film. The first contacts include silicide layers of the same material which are on the gate electrode and the diffusion layers respectively, and first metal layers on the silicide layers. The second contacts are on the first contacts.

In one embodiment, a method of manufacturing a semiconductor device includes forming a plug in a first insulator, forming a first film on the first insulator and the plug, and forming an opening in the first film. The method further includes forming a second insulator in the opening to form an air gap in the opening, removing the first film after forming the second insulator, to expose the plug, and forming an interconnect on the exposed plug.

Growing community of inventors

Yokkaichi, Japan

Naomi Fukumaki