Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Naomi Anzue

Toshiya Yokogawa

Yoshiaki Hasegawa

Akihiko Ishibashi

Gaku Sugahara

Michihiro Yamagata

Norihiro Imamura

Ryou Kato

Yoshimitsu Noguchi

Akira Inoue

An electronic mirror deviceaccording to an aspect of the present disclosure displays a user's facial mirror image, and can shift, according to the user's facial orientation or line of sight, the location where the facial image is displayed to a location where he or she can view his or her own facial image easily. The electronic mirror deviceaccording to an aspect of the present disclosure includes an image capturing sectionwhich captures the user's facial image, an image data generating sectionwhich outputs image data representing the user's facial mirror image based on image data representing the user's facial image that has been captured, a display sectionwhich displays the image data representing the user's facial mirror image, and a display location shifting sectionwhich shifts a location where the mirror image is displayed on the display section.

Electronic mirror device

Provided is a digital mirror apparatus including: a camera that captures an image of a user; a display having a display surface located at a position that allows the user to visually identify the display; a controller; a memory; and a control panel operable by the user, wherein the controller: horizontally flips a live image of the user that is being captured by the camera to generate a mirror image; reads a reference image to be compared with the mirror image; superimposes the reference image on the mirror image to display on the display a display image in a region of the display in which the reference image and the mirror image overlap one another; and stores one frame of the live image in the memory, based on an operation performed on the control panel by the user while the display image is displayed on the display.

Digital mirror apparatus

This nitride-based semiconductor light-emitting element includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, the nitride-based semiconductor multilayer structure having a growing plane which is an m-plane; and an electrode which is arranged on an AlGaN layer. The AlGaN layer is formed of a GaN-based semiconductor. The electrode includes Ag as the principal component and also includes Ge and at least one of Mg and Zn.

Nitride semiconductor light-emitting element and method for fabricating the same

A nitride-based semiconductor element according to an embodiment of the present disclosure includes: a p-type contact layer, of which the growing plane is an m plane; and an electrode which is arranged on the growing plane of the p-type contact layer. The p-type contact layer is a GaN-based semiconductor layer which has a thickness of 26 nm to 60 nm and which includes oxygen at a concentration that is equal to or higher than Mg concentration of the p-type contact layer. In the p-type contact layer, the number of Ga vacancies is larger than the number of N vacancies.

Nitride-based semiconductor element and method for fabricating the same

A method includes the step of preparing a GaN-based substrate, the step of forming on the substrate a nitride-based semiconductor multilayer structure including a p-type AlGaN layer (p-type semiconductor region), the p-type AlGaN layerbeing made of an AlInGaN semiconductor (x+y+z=1, x&#x2267;0, y&#x2267;0, z&#x2267;0), and a principal surface of the p-type AlGaN layerbeing an m-plane, the step of forming a metal layerwhich contains at least one of Mg and Zn on the principal surface of the p-type AlGaN layerand performing a heat treatment, the step of removing the metal layer, and the step of forming a p-type electrode on the principal surface of the p-type AlGaN layer, wherein the heat treatment causes a N concentration to be higher than a Ga concentration in the p-type AlGaN layer

Nitride-based semiconductor device and method for fabricating the same

A nitride-based semiconductor device includes a p-type AlGaN layerwhose growing plane is an m-plane and an electrodeprovided on the p-type AlGaN layer. The AlGaN layerincludes a p-AlGaN contact layerthat is made of an AlGaInN (x+y+z=1, x&#x2267;0, y&#x3e;0, z&#x2267;0) semiconductor, which has a thickness of not less than 26 nm and not more than 60 nm. The p-AlGaN contact layerincludes a body regionA which contains Mg of not less than 4&#xd7;10cmand not more than 2&#xd7;10cmand a high concentration regionB which is in contact with the electrodeand which has a Mg concentration of not less than 1&#xd7;10cm.

Nitride-type semiconductor element and process for production thereof

A semiconductor light-emitting device according to the present invention includes: a GaN substratecontaining an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structureprovided on a main surface of the GaN substrate; a p-electrodeformed on the multilayer structure; a first n-electrodesubstantially covering the entire rear surface of the GaN substrate; and a second n-electrodeprovided on the first n-electrodeso as to expose at least a portion of the periphery of the first n-electrode

Semiconductor light emitting element and method for manufacturing same

A nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane; and an electrode that is arranged on the p-type semiconductor region, wherein the p-type semiconductor region is made of an AlGaInN semiconductor (where x+y+z=1, x&#x2267;0, y&#x2267;0, and z&#x2267;0), and the electrode contains Mg, Zn and Ag.

A nitride compound semiconductor element according to the present invention is a nitride compound semiconductor element including a substratehaving an upper face and a lower face and a semiconductor multilayer structuresupported by the upper face of the substrate, such that the substrateand the semiconductor multilayer structurehave at least two cleavage planes. At least one cleavage inducing memberwhich is in contact with either one of the two cleavage planes is provided, and a size of the cleavage inducing memberalong a direction parallel to the cleavage plane is smaller than a size of the upper face of the substratealong the direction parallel to the cleavage plane.

Nitride compound semiconductor element

An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate; a semiconductor multilayer structureformed on a principal face of the n-GaN substrate, the semiconductor multilayer structureincluding a p-type region and an n-type region; a p-side electrodewhich is in contact with a portion of the p-type region included in the semiconductor multilayer structure; and an n-side electrodeprovided on the rear face of the n-GaN substrate. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrodeis adjusted to 5 atom % or less.

Growing community of inventors

Osaka, Japan

Naomi Anzue