Hitachi-High-Technologies Corporation

Hitachi, Ltd.

Hitachi High-Tech Corporation

Hitachi Instruments Engineering Co., Ltd.

Naomasa Suzuki

Muneyuki Fukuda

Mitsugu Sato

Tomoyasu Shojo

Ichiro Tachibana

Noritsugu Takahashi

Yoichi Ose

Hideo Todokoro

Atsuko Fukada

Makoto Ezumi

Akira Ikegami

Hidetoshi Nishiyama

Hideyuki Kazumi

Kenji Obara

Natsuki Tsuno

Momoyo Enyama

Hideto Dohi

Nobuhiro Okai

Naoma Ban

Toshiro Kubo

Hiroyuki Ito

Noriaki Arai

Yasushi Ebizuka

Katsunori Onuki

Yuta Kawamoto

Manabu Yano

Takanori Kishimoto

Hiroshi Suzuki

Yasunari Sohda

Hajime Kawano

Yoshinobu Kimura

Kazuo Aoki

Hiroshi Makino

Hiroshi Tsuji

Hideo Kashima

Makoto Sakakibara

Toshiei Kurosaki

Tomonori Nakano

Zhaohui Cheng

Satoshi Takada

Daisuke Bizen

Takeyoshi Ohashi

Shoji Hotta

Sayaka Tanimoto

Shunsuke Koshihara

Kenichi Morita

Isao Ochiai

Kotoko Urano

Tasuku Yano

Takehiko Konno

Kouji Ishiguro

Atsushi Okita

Takayuki Hoshino

Ryuji Nishi

Satoshi Tadaka

Akio Takaoka

Tatsuichi Kato

Satoshi Umehara

Hiroaki Baba

Provided is an image processing system capable of estimating a three-dimensional shape of a semiconductor pattern or a particle by solving problems of measurement reduction in a height direction and taking an enormous amount of time at a time of acquiring learning data. The image processing system according to the disclosure stores a detectable range of a detector provided in a charged particle beam device in a storage device in advance, generates a simulated image of a three-dimensional shape pattern using the detectable range, and learns a relationship between the simulated image and the three-dimensional shape pattern in advance.

Image processing system

The present disclosure aims at proposing a multi-beam irradiation device capable of correcting off-axis aberrations. In order to achieve the above object, a beam irradiation device is proposed, which includes a beam source which emits a plurality of beams; an objective lens () which focuses a beam on a sample; a first lens () which is arranged such that a lens main surface is positioned at an object point of the objective lens and deflects a plurality of incident beams toward an intersection point of a lens main surface of the objective lens and an optical axis; a second lens () which is arranged closer to a beam source side than the first lens and focuses the plurality of beams on a lens main surface of the first lens; and a third lens () which is arranged closer to the beam source side than the second lens and deflects the plurality of beams toward an intersection point of a lens main surface of the second lens and the optical axis.

Beam irradiation device

To improve detection efficiency of secondary particles without increasing a size of a charged particle beam apparatus, a charged particle beam apparatus according to the invention includes: a charged particle beam source configured to irradiate a sample with a primary particle beam; a scanning deflector configured to scan and deflect the primary particle beam to a desired position of the sample; and a detector configured to detect secondary particles emitted from the desired position. The charged particle beam apparatus further includes: a focusing lens electrode arranged coaxially with the primary particle beam and configured to generate a focusing electric field that is an electric field that focuses a trajectory of the secondary particles; and a mesh electrode configured to reduce leakage of the focusing electric field on a trajectory of the primary particle beam.

Charged particle beam apparatus

This charged particle beam device is provided with: a plurality of detectors for detecting secondary particles, the detectors being disposed in a symmetrical manner around the optical axis of a primary charged particle beam closer to the charged particle source side than an objective lens; electrodes for forming an electric field oriented in directions corresponding to each of the plurality of detectors, the electrodes being provided on the travel routes of secondary particles from a sample to the detectors; and a control power supply for applying a voltage to the electrodes. Adjusting the voltage applied to each of the electrodes makes it possible to detect, upon deflecting, the secondary particles, and to control the range of azimuths of the secondary particles to be detected.

Charged particle beam device

To provide a charged particle beam device which enables observation and evaluation of the surface and the inside of a sample with low damage to the sample, the charged particle beam device has: a charged particle beam source; a sample tablein which the sampleis placed; a charged particle beam optical system which pulsates a charged particle beamand irradiates the charged particle beam to the sample at an acceleration voltage within a range of 0 kV to 5 kV; a split distance selectorfor selecting a measurement object of the sample; and a split distance setting unitfor setting a split distance in one line scanning of the charged particle beam on the sample.

Charged particle beam device with distance setting between irradiation regions in a scan line

The objective of the present invention is to simultaneously achieve image observations at a high resolution using an electron microscope, and X-ray analysis at a high energy-resolution using a microcalorimeter. An X-ray detector is disposed at a position where the intensity of the magnetic field from an objective lens is weaker than the critical magnetic field of a material used in a thermal insulation shield for a superconducting transition-edge sensor or a microcalorimeter. In addition, an optical system for transmitting X-rays to the detector is inserted between a sample and the detector. Alternatively, a magnetic field shield for shielding the X-ray detector is used.

Electron microscope

Provided is a charged particle beam apparatus which includes a charged particle source, a sample table on which a sample is placed, a charged particle beam optical system that includes an objective lens and emits a charged particle beam emitted from the charged particle source onto the sample, a plurality of detectors which detect secondary particles emitted from the sample when being irradiated with the charged particle beam, and a rotation member which magnetically, electrically, or mechanically changes a detected azimuth angle of the secondary particles emitted from the sample.

The charged particle beam application device is provided with a charged particle source and an objective lens that converges charged particle beam generated by the charged particle source onto a sample. In this case, the charged particle beam application device is further provided with an aberration generating element installed between the charged particle beam source and the objective lens, a tilt-use deflector installed between the aberration generating element and the objective lens, a deflection aberration control unit for controlling the aberration generating element, a first electromagnetic field superposing multipole installed between the aberration generating element and the objective lens, and an electromagnetic field superposing multipole control unit for controlling the first electromagnetic field superposing multipole. The aberration generating element has such a function that when the charged particle beam is tilted relative to the sample by the tilt-use deflector, a plurality of resulting aberrations are cancelled with one another. Moreover, the first electromagnetic field superposing multipole has a function to change the orbit of a charged particle beam having energy different from that of the main charged particle beam in the charged particle beam.

Charged particle beam application device

A charged particle beam apparatus makes it possible to acquire information in the cross-sectional direction (depth direction) of a sample having an internal structure in a nondestructive manner with reduced damage. Further, the apparatus makes it possible to analyze the depth and/or dimensions in the depth direction of the internal structure. The charged particle beam apparatus includes: a means for providing a time base for control signals; a means for applying a charged particle beam to a sample in synchronization with the time base and controlling an irradiation position; a means for analyzing the emission characteristics of an emission electron from the sample from a detection signal of the emission electron; and a means for analyzing the electrical characteristics or cross-sectional morphological characteristics of the sample based on the emission characteristics.

Charged particle beam apparatus and inspection method using the same

Provided is a charged-particle-beam device capable of simultaneously cancelling out a plurality of aberrations caused by non-uniform distribution of the opening angle and energy of a charged particle beam. The charged-particle-beam device is provided with an aberration generation lens for generating an aberration due to the charged particle beam passing off-axis, and a corrective lens for causing the trajectory of the charged particle beam to converge on the main surface of an objective lens irrespective of the energy of the charged particle beam. The main surface of the corrective lens is disposed at a crossover position at which a plurality of charged particle beams having differing opening angles converge after passing through the aberration generation lens.

Charged particle-beam device

A scanning electron beam device having: a deflector () for deflecting an electron beam () emitted from an electron source (); an objective lens () for causing the electron beam to converge; a retarding electrode; a stage () for placing a wafer (); and a controller (); wherein the stage can be raised and lowered. In the low acceleration voltage region, the controller performs rough adjustment and fine adjustment of the focus in relation to the variation in the height of the wafer using electromagnetic focusing performed through excitation current adjustment of the objective lens. In the high acceleration voltage region, the controller performs rough adjustment of the focus in relation to the variation in the height of the wafer by mechanical focusing performed through raising and lowering of the stage, and performs fine adjustment by electrostatic focusing performed through adjustment of the retarding voltage. It thereby becomes possible to provide a scanning electron beam device that measures, in a highly accurate manner, both the upper part and the bottom part of a groove or a hole having a high aspect ratio.

Scanning electron beam device with focus adjustment based on acceleration voltage and dimension measurement method using same

In order to provide a charged particle beam apparatus capable of high resolution measurement of a sample at any inclination angle, a charged particle beam apparatus for detecting secondary charged particles () generated by irradiating a sample () with a primary charged particle beam () is provided with a beam tilt lens () having: a yoke magnetic path member () and a lens coil () to focus the primary charged particle beam () on the sample (); and a solenoid coil () configured to arrange the upper end on the side surface of the yoke magnetic path member () and arrange the bottom end between the tip end of the pole piece of the yoke magnetic path member () and the sample () in order to arbitrarily tilt the primary charged particle beam () on the sample ().

When a signal electron is detected by energy selection by combining and controlling retarding and boosting for observation of a deep hole, etc., the only way for focus adjustment is to use a change in magnetic field of an objective lens. However, since responsiveness of the change in magnetic field is poor, throughput reduces. A charged particle beam device includes: an electron source configured to generate a primary electron beam; an objective lens configured to focus the primary electron beam; a deflector configured to deflect the primary electron beam; a detector configured to detect a secondary electron or a reflection electron generated from a sample by irradiation of the primary electron beam; an electrode having a hole through which the primary electron beam passes; a voltage control power supply configured to apply a negative voltage to the electrode; and a retarding voltage control power supply configured to generate an electric field, which decelerates the primary electron beam, on the sample by applying the negative voltage to the sample, wherein the charged particle beam device performs focus adjustment while an offset between the voltage applied to the electrode and the voltage applied to the sample is being kept constant.

Growing community of inventors

Hitachinaka, Japan

Naomasa Suzuki