Toshiba Memory Corporation

Naoko Numata

Hideko Mukaida

Akira Tanimoto

Kenji Miyawaki

A semiconductor device includes a package substrate having a first surface and a second surface. A semiconductor chip is provided on the first surface of the package substrate and includes a semiconductor element. An adhesive is provided between the semiconductor chip and the package substrate. A metal bump is provided on the second surface. A package substrate is a multilayer substrate that includes first to fourth wiring layers and first to third resin layers. CTE1&#x3c;CTE2&#x3c;CTE3&#x3c;CTE4 is satisfied where coefficients of thermal expansion of the semiconductor chip, the first to third resin layers, the first to fourth wiring layers, and the adhesive are CTE1 to CTE4, respectively. EM1&#x3e;EM3&#x3e;EM2&#x3e;EM4 is satisfied where elastic moduli of the semiconductor chip, the first to third resin layers, the first to fourth wiring layers, and the adhesive are EM1 to EM4, respectively.

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Shinagawa Tokyo, Japan

Naoko Numata